FR2319182B3 - - Google Patents

Info

Publication number
FR2319182B3
FR2319182B3 FR7620111A FR7620111A FR2319182B3 FR 2319182 B3 FR2319182 B3 FR 2319182B3 FR 7620111 A FR7620111 A FR 7620111A FR 7620111 A FR7620111 A FR 7620111A FR 2319182 B3 FR2319182 B3 FR 2319182B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7620111A
Other versions
FR2319182A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2319182A1 publication Critical patent/FR2319182A1/fr
Application granted granted Critical
Publication of FR2319182B3 publication Critical patent/FR2319182B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7620111A 1975-07-21 1976-07-01 Memoire a semi-conducteurs Granted FR2319182A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2532594A DE2532594B2 (de) 1975-07-21 1975-07-21 Halbleiterspeicher

Publications (2)

Publication Number Publication Date
FR2319182A1 FR2319182A1 (fr) 1977-02-18
FR2319182B3 true FR2319182B3 (fr) 1979-03-23

Family

ID=5952074

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7620111A Granted FR2319182A1 (fr) 1975-07-21 1976-07-01 Memoire a semi-conducteurs

Country Status (5)

Country Link
JP (1) JPS5212584A (fr)
DE (1) DE2532594B2 (fr)
FR (1) FR2319182A1 (fr)
GB (1) GB1516005A (fr)
NL (1) NL7607984A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
JPS6034270B2 (ja) * 1976-01-12 1985-08-07 テキサス・インスツルメンツ・インコ−ポレイテツド 半導体メモリ装置およびその製造方法
NL176415C (nl) * 1976-07-05 1985-04-01 Hitachi Ltd Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit.
IT1089299B (it) * 1977-01-26 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
JPS54159887A (en) * 1978-06-08 1979-12-18 Nec Corp Semiconductor memory device
DE2905506A1 (de) * 1979-02-14 1980-09-04 Bosch Gmbh Robert Zuendbeginnsensor, insbesondere bei brennkraftmaschinen
DE2935254A1 (de) * 1979-08-31 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer monolithischen statischen speicherzelle
DE2935291A1 (de) * 1979-08-31 1981-03-19 Siemens AG, 1000 Berlin und 8000 München Monolithische statische speicherzelle
EP0154685B1 (fr) * 1980-01-25 1990-04-18 Kabushiki Kaisha Toshiba Dispositif de mémoire semi-conductrice
JPS57210665A (en) * 1981-06-19 1982-12-24 Mitsubishi Electric Corp Semiconductor memory device
DE3138314A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor hoher packungsdichte mit fotoleiterschicht
DE3138295A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit hoher packungsdichte
JPS5921168U (ja) * 1982-07-30 1984-02-08 三菱電機株式会社 メカニカル・シ−ル
JP2533070Y2 (ja) * 1989-06-14 1997-04-16 株式会社 テーアンテー スライドスイッチ

Also Published As

Publication number Publication date
FR2319182A1 (fr) 1977-02-18
DE2532594A1 (de) 1977-02-03
NL7607984A (nl) 1977-01-25
JPS56947B2 (fr) 1981-01-10
DE2532594B2 (de) 1980-05-22
GB1516005A (en) 1978-06-28
JPS5212584A (en) 1977-01-31

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