FR2315168A1 - Procede de fabrication de corps lamellaires polycristallins notamment semi-conducteurs - Google Patents

Procede de fabrication de corps lamellaires polycristallins notamment semi-conducteurs

Info

Publication number
FR2315168A1
FR2315168A1 FR7519363A FR7519363A FR2315168A1 FR 2315168 A1 FR2315168 A1 FR 2315168A1 FR 7519363 A FR7519363 A FR 7519363A FR 7519363 A FR7519363 A FR 7519363A FR 2315168 A1 FR2315168 A1 FR 2315168A1
Authority
FR
France
Prior art keywords
substrate
polycrystalline
manufacturing process
semiconductor
lamellar bodies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7519363A
Other languages
English (en)
French (fr)
Other versions
FR2315168B1 (enrdf_load_stackoverflow
Inventor
Johannes Meuleman
Jean-Pierre Besselere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7519363A priority Critical patent/FR2315168A1/fr
Publication of FR2315168A1 publication Critical patent/FR2315168A1/fr
Application granted granted Critical
Publication of FR2315168B1 publication Critical patent/FR2315168B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/008—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method using centrifugal force to the charge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
FR7519363A 1975-06-20 1975-06-20 Procede de fabrication de corps lamellaires polycristallins notamment semi-conducteurs Granted FR2315168A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7519363A FR2315168A1 (fr) 1975-06-20 1975-06-20 Procede de fabrication de corps lamellaires polycristallins notamment semi-conducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7519363A FR2315168A1 (fr) 1975-06-20 1975-06-20 Procede de fabrication de corps lamellaires polycristallins notamment semi-conducteurs

Publications (2)

Publication Number Publication Date
FR2315168A1 true FR2315168A1 (fr) 1977-01-14
FR2315168B1 FR2315168B1 (enrdf_load_stackoverflow) 1978-03-17

Family

ID=9156807

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7519363A Granted FR2315168A1 (fr) 1975-06-20 1975-06-20 Procede de fabrication de corps lamellaires polycristallins notamment semi-conducteurs

Country Status (1)

Country Link
FR (1) FR2315168A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0065373A1 (en) * 1981-04-30 1982-11-24 Hoxan Corporation Method fabricating a polycrystalline silicon wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1454189A (fr) * 1964-11-12 1966-07-22 Consortium Elektrochem Ind Procédé de préparation de corps homogènes à base de germanium-silicium

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1454189A (fr) * 1964-11-12 1966-07-22 Consortium Elektrochem Ind Procédé de préparation de corps homogènes à base de germanium-silicium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0065373A1 (en) * 1981-04-30 1982-11-24 Hoxan Corporation Method fabricating a polycrystalline silicon wafer

Also Published As

Publication number Publication date
FR2315168B1 (enrdf_load_stackoverflow) 1978-03-17

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Legal Events

Date Code Title Description
ST Notification of lapse