FR2313770B1 - - Google Patents

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Publication number
FR2313770B1
FR2313770B1 FR7616626A FR7616626A FR2313770B1 FR 2313770 B1 FR2313770 B1 FR 2313770B1 FR 7616626 A FR7616626 A FR 7616626A FR 7616626 A FR7616626 A FR 7616626A FR 2313770 B1 FR2313770 B1 FR 2313770B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7616626A
Other versions
FR2313770A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2313770A1 publication Critical patent/FR2313770A1/fr
Application granted granted Critical
Publication of FR2313770B1 publication Critical patent/FR2313770B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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    • H01L21/314—Inorganic layers
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR7616626A 1975-06-04 1976-06-02 Procede de fabrication d'un dispositif semi-conducteur, par nitridation, et dispositifs ainsi obtenus Granted FR2313770A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7506594A NL7506594A (nl) 1975-06-04 1975-06-04 Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.

Publications (2)

Publication Number Publication Date
FR2313770A1 FR2313770A1 (fr) 1976-12-31
FR2313770B1 true FR2313770B1 (fr) 1982-04-23

Family

ID=19823876

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7616626A Granted FR2313770A1 (fr) 1975-06-04 1976-06-02 Procede de fabrication d'un dispositif semi-conducteur, par nitridation, et dispositifs ainsi obtenus

Country Status (13)

Country Link
US (1) US4113515A (fr)
JP (1) JPS51148362A (fr)
AU (1) AU509006B2 (fr)
BE (1) BE842511A (fr)
BR (1) BR7603505A (fr)
CA (1) CA1068010A (fr)
DE (1) DE2623009C2 (fr)
ES (1) ES448459A1 (fr)
FR (1) FR2313770A1 (fr)
GB (1) GB1550645A (fr)
IT (1) IT1063373B (fr)
NL (1) NL7506594A (fr)
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BE842511A (fr) 1976-12-02
DE2623009C2 (de) 1983-06-30
US4113515A (en) 1978-09-12
DE2623009A1 (de) 1976-12-09
AU509006B2 (en) 1980-04-17
ES448459A1 (es) 1977-12-01
AU1448976A (en) 1977-12-08
JPS5435066B2 (fr) 1979-10-31
FR2313770A1 (fr) 1976-12-31
CA1068010A (fr) 1979-12-11
JPS51148362A (en) 1976-12-20
NL7506594A (nl) 1976-12-07
IT1063373B (it) 1985-02-11
SE7606171L (sv) 1976-12-05
GB1550645A (en) 1979-08-15
BR7603505A (pt) 1977-01-11

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