FR2312113A1 - Procede de decapage - Google Patents

Procede de decapage

Info

Publication number
FR2312113A1
FR2312113A1 FR7606746A FR7606746A FR2312113A1 FR 2312113 A1 FR2312113 A1 FR 2312113A1 FR 7606746 A FR7606746 A FR 7606746A FR 7606746 A FR7606746 A FR 7606746A FR 2312113 A1 FR2312113 A1 FR 2312113A1
Authority
FR
France
Prior art keywords
pickling process
pickling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7606746A
Other languages
English (en)
Other versions
FR2312113B1 (fr
Inventor
Roderic K Hood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2312113A1 publication Critical patent/FR2312113A1/fr
Application granted granted Critical
Publication of FR2312113B1 publication Critical patent/FR2312113B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photographic Processing Devices Using Wet Methods (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
FR7606746A 1975-04-28 1976-03-02 Procede de decapage Granted FR2312113A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/572,570 US3953265A (en) 1975-04-28 1975-04-28 Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers

Publications (2)

Publication Number Publication Date
FR2312113A1 true FR2312113A1 (fr) 1976-12-17
FR2312113B1 FR2312113B1 (fr) 1978-05-19

Family

ID=24288426

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7606746A Granted FR2312113A1 (fr) 1975-04-28 1976-03-02 Procede de decapage

Country Status (5)

Country Link
US (1) US3953265A (fr)
JP (1) JPS5931853B2 (fr)
DE (1) DE2618022A1 (fr)
FR (1) FR2312113A1 (fr)
GB (1) GB1490828A (fr)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4039370A (en) * 1975-06-23 1977-08-02 Rca Corporation Optically monitoring the undercutting of a layer being etched
US4021278A (en) * 1975-12-12 1977-05-03 International Business Machines Corporation Reduced meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
JPS5350487U (fr) * 1976-10-01 1978-04-28
US4161356A (en) * 1977-01-21 1979-07-17 Burchard John S Apparatus for in-situ processing of photoplates
US4198261A (en) * 1977-12-05 1980-04-15 Gould Inc. Method for end point detection during plasma etching
JPS54114055U (fr) * 1978-01-31 1979-08-10
JPS6053305B2 (ja) * 1979-01-17 1985-11-25 松下電器産業株式会社 現像方法
JPS5848673A (ja) * 1981-09-16 1983-03-22 Matsushita Electric Ind Co Ltd 金属薄膜のエツチング装置
JPS5857843U (ja) * 1981-10-16 1983-04-19 パイオニア株式会社 フオトレジスト湿式現像装置
US4359360A (en) * 1981-12-10 1982-11-16 The United States Of America As Represented By The Secretary Of The Air Force Apparatus for selectively jet etching a plastic encapsulating an article
JPS58200537A (ja) * 1982-05-18 1983-11-22 Toshiba Corp レジスト塗布方法
JPS5978342A (ja) * 1982-10-28 1984-05-07 Fujitsu Ltd レジスト膜の現像方法
JPS61279858A (ja) * 1985-06-05 1986-12-10 Mitsubishi Electric Corp ネガレジスト現像装置
JPH0451474Y2 (fr) * 1986-05-15 1992-12-03
JP2646205B2 (ja) * 1986-07-02 1997-08-27 大日本印刷株式会社 感光性樹脂層の形成法
JPS63185029A (ja) * 1987-01-28 1988-07-30 Hitachi Ltd ウエハ処理装置
JPS63278234A (ja) * 1987-04-15 1988-11-15 Mitsubishi Electric Corp シリカガラス液吐出装置
AT389959B (de) * 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
US4799993A (en) * 1988-05-10 1989-01-24 E. I. Du Pont De Nemours And Company Rotary developer and method for its use
JPH06103687B2 (ja) * 1988-08-12 1994-12-14 大日本スクリーン製造株式会社 回転式表面処理方法および回転式表面処理における処理終点検出方法、ならびに回転式表面処理装置
US4922277A (en) * 1988-11-28 1990-05-01 The United States Of America As Represented By The Secretary Of The Air Force Silicon wafer photoresist developer
US5185056A (en) * 1991-09-13 1993-02-09 International Business Machines Corporation Method and apparatus for etching semiconductor wafers and developing resists
US5429912A (en) * 1993-08-02 1995-07-04 Chartered Semiconductor Manufacturing Pte Ltd. Method of dispensing fluid onto a wafer
US6712577B2 (en) * 1994-04-28 2004-03-30 Semitool, Inc. Automated semiconductor processing system
JPH08316190A (ja) * 1995-05-18 1996-11-29 Dainippon Screen Mfg Co Ltd 基板処理装置
CA2211397A1 (fr) * 1995-11-29 1997-06-19 Litton Systems, Inc. Procede permettant de purger un substrat sacrificiel multicouche au silicium soumis a une attaque acide
US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US6350319B1 (en) 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
US6264752B1 (en) 1998-03-13 2001-07-24 Gary L. Curtis Reactor for processing a microelectronic workpiece
US6039059A (en) * 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
US6406641B1 (en) * 1997-06-17 2002-06-18 Luxtron Corporation Liquid etch endpoint detection and process metrology
US6318385B1 (en) 1998-03-13 2001-11-20 Semitool, Inc. Micro-environment chamber and system for rinsing and drying a semiconductor workpiece
US6423642B1 (en) 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US20050217707A1 (en) * 1998-03-13 2005-10-06 Aegerter Brian K Selective processing of microelectronic workpiece surfaces
US6632292B1 (en) * 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
JP3563605B2 (ja) * 1998-03-16 2004-09-08 東京エレクトロン株式会社 処理装置
JP2000084503A (ja) * 1998-07-13 2000-03-28 Kokusai Electric Co Ltd 被処理物の流体処理方法及びその装置
US6864186B1 (en) * 1998-07-28 2005-03-08 Micron Technology, Inc. Method of reducing surface contamination in semiconductor wet-processing vessels
KR20010031071A (ko) 1998-08-11 2001-04-16 레빈 제임스 피. 공중합체 레지스트용 단일 성분 현상제
US6426177B2 (en) 1998-08-11 2002-07-30 International Business Machines Corporation Single component developer for use with ghost exposure
US6548411B2 (en) 1999-01-22 2003-04-15 Semitool, Inc. Apparatus and methods for processing a workpiece
US6680253B2 (en) 1999-01-22 2004-01-20 Semitool, Inc. Apparatus for processing a workpiece
US7217325B2 (en) * 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
US6511914B2 (en) 1999-01-22 2003-01-28 Semitool, Inc. Reactor for processing a workpiece using sonic energy
US6492284B2 (en) 1999-01-22 2002-12-10 Semitool, Inc. Reactor for processing a workpiece using sonic energy
US7264698B2 (en) 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
JP4288010B2 (ja) 1999-04-13 2009-07-01 セミトゥール・インコーポレイテッド 処理流体の流れ具合を向上させる処理チャンバを備えた加工物処理装置
US7438788B2 (en) 1999-04-13 2008-10-21 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
JP2000331975A (ja) * 1999-05-19 2000-11-30 Ebara Corp ウエハ洗浄装置
US6516815B1 (en) * 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6497241B1 (en) * 1999-12-23 2002-12-24 Lam Research Corporation Hollow core spindle and spin, rinse, and dry module including the same
US6286231B1 (en) 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US7234477B2 (en) * 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US7584761B1 (en) * 2000-06-30 2009-09-08 Lam Research Corporation Wafer edge surface treatment with liquid meniscus
WO2002004887A1 (fr) * 2000-07-08 2002-01-17 Semitool, Inc. Procedes et appareil de traitement microelectronique de pieces a usiner au moyen de la metrologie
JP2002231989A (ja) * 2001-02-02 2002-08-16 Mitsubishi Heavy Ind Ltd 太陽電池モジュール及び太陽光発電システム
US20050061676A1 (en) * 2001-03-12 2005-03-24 Wilson Gregory J. System for electrochemically processing a workpiece
US7171973B2 (en) * 2001-07-16 2007-02-06 Tokyo Electron Limited Substrate processing apparatus
AU2002343330A1 (en) * 2001-08-31 2003-03-10 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6824612B2 (en) 2001-12-26 2004-11-30 Applied Materials, Inc. Electroless plating system
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
JP4157419B2 (ja) * 2002-06-11 2008-10-01 セイコーインスツル株式会社 近視野光ヘッドの製造方法および製造装置
JP2004055722A (ja) * 2002-07-18 2004-02-19 Renesas Technology Corp 洗浄装置、基板の洗浄方法および半導体装置の製造方法
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7389783B2 (en) * 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7198055B2 (en) * 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7153400B2 (en) * 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7997288B2 (en) * 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7045018B2 (en) * 2002-09-30 2006-05-16 Lam Research Corporation Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US8236382B2 (en) * 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US20040108212A1 (en) * 2002-12-06 2004-06-10 Lyndon Graham Apparatus and methods for transferring heat during chemical processing of microelectronic workpieces
US7675000B2 (en) * 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
DE10361075A1 (de) * 2003-12-22 2005-07-28 Pac Tech - Packaging Technologies Gmbh Verfahren und Vorichtung zur Trocknung von Schaltungssubstraten
JP4369325B2 (ja) * 2003-12-26 2009-11-18 東京エレクトロン株式会社 現像装置及び現像処理方法
US8062471B2 (en) * 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US7644512B1 (en) * 2006-01-18 2010-01-12 Akrion, Inc. Systems and methods for drying a rotating substrate
US7928366B2 (en) * 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
TWI352628B (en) * 2006-07-21 2011-11-21 Akrion Technologies Inc Nozzle for use in the megasonic cleaning of substr
US8813764B2 (en) 2009-05-29 2014-08-26 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
ES2394167T3 (es) * 2006-10-16 2013-01-23 Materials And Technologies Corporation Aparato de procesamiento húmedo usando un menisco de fluído
US8146902B2 (en) * 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US7975708B2 (en) * 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US8141566B2 (en) * 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8051863B2 (en) * 2007-10-18 2011-11-08 Lam Research Corporation Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus
JP4700117B2 (ja) 2009-02-25 2011-06-15 東京エレクトロン株式会社 現像処理方法
KR20110106178A (ko) * 2010-03-22 2011-09-28 삼성전자주식회사 기판 처리 장치 및 방법
JP5815967B2 (ja) * 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
KR101290527B1 (ko) * 2011-05-31 2013-07-30 주식회사 테스 기판처리시스템 및 이를 이용한 기판처리방법
JP5829082B2 (ja) * 2011-09-09 2015-12-09 オリンパス株式会社 洗浄装置
IN2014KN01462A (fr) * 2011-12-15 2015-10-23 Advanced Tech Materials
JP6234736B2 (ja) * 2013-08-30 2017-11-22 芝浦メカトロニクス株式会社 スピン処理装置
CN106546088A (zh) * 2015-09-16 2017-03-29 泰科电子(上海)有限公司 风干系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437543A (en) * 1965-03-09 1969-04-08 Western Electric Co Apparatus for polishing
US3489608A (en) * 1965-10-26 1970-01-13 Kulicke & Soffa Ind Inc Method and apparatus for treating semiconductor wafers
US3597289A (en) * 1967-01-19 1971-08-03 Licentia Gmbh Method of etching a semiconductor body
US3765984A (en) * 1968-07-17 1973-10-16 Minnesota Mining & Mfg Apparatus for chemically polishing crystals
US3701705A (en) * 1971-06-07 1972-10-31 Western Electric Co Fluidic masking apparatus for etching
US3874959A (en) * 1973-09-21 1975-04-01 Ibm Method to establish the endpoint during the delineation of oxides on semiconductor surfaces and apparatus therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
GB1490828A (en) 1977-11-02
JPS5931853B2 (ja) 1984-08-04
US3953265A (en) 1976-04-27
FR2312113B1 (fr) 1978-05-19
JPS51132972A (en) 1976-11-18
DE2618022A1 (de) 1976-11-11

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