FR2301094A1 - Procede de - Google Patents
Procede deInfo
- Publication number
- FR2301094A1 FR2301094A1 FR7604013A FR7604013A FR2301094A1 FR 2301094 A1 FR2301094 A1 FR 2301094A1 FR 7604013 A FR7604013 A FR 7604013A FR 7604013 A FR7604013 A FR 7604013A FR 2301094 A1 FR2301094 A1 FR 2301094A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2233—Diffusion into or out of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
- H01L21/244—Alloying of electrode materials
- H01L21/246—Alloying of electrode materials with AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2506457A DE2506457C3 (de) | 1975-02-15 | 1975-02-15 | Verfahren zur Herstellung einer silikatischen Abdeckschicht auf einer Halbleiterscheibe öder auf einer auf ihr befindlichen Schicht |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2301094A1 true FR2301094A1 (fr) | 1976-09-10 |
FR2301094B1 FR2301094B1 (fr) | 1982-10-08 |
Family
ID=5938984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7604013A Granted FR2301094A1 (fr) | 1975-02-15 | 1976-02-13 | Procede de |
Country Status (4)
Country | Link |
---|---|
US (1) | US4075044A (fr) |
DE (1) | DE2506457C3 (fr) |
FR (1) | FR2301094A1 (fr) |
GB (1) | GB1510597A (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4236948A (en) * | 1979-03-09 | 1980-12-02 | Demetron Gesellschaft Fur Elektronik Werkstoffe Mbh | Process for doping semiconductor crystals |
US4222792A (en) * | 1979-09-10 | 1980-09-16 | International Business Machines Corporation | Planar deep oxide isolation process utilizing resin glass and E-beam exposure |
DE2944180A1 (de) * | 1979-11-02 | 1981-05-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer einen halbleiterkoerper einseitig bedeckenden isolierschicht |
JPS5676538A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Formation of insulating film on semiconductor substrate |
NL8403459A (nl) * | 1984-11-13 | 1986-06-02 | Philips Nv | Werkwijze en inrichting voor het aanbrengen van een laag van fotogevoelig materiaal op een halfgeleiderschijf. |
DK170189B1 (da) * | 1990-05-30 | 1995-06-06 | Yakov Safir | Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf |
US6790125B2 (en) * | 2000-12-11 | 2004-09-14 | International Business Machines Corporation | Backside integrated circuit die surface finishing technique and tool |
US7405002B2 (en) * | 2004-08-04 | 2008-07-29 | Agency For Science, Technology And Research | Coated water-soluble nanoparticles comprising semiconductor core and silica coating |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3212921A (en) * | 1961-09-29 | 1965-10-19 | Ibm | Method of forming a glass film on an object and the product produced thereby |
US3303399A (en) * | 1964-01-30 | 1967-02-07 | Ibm | Glasses for encapsulating semiconductor devices and resultant devices |
US3298879A (en) * | 1964-03-23 | 1967-01-17 | Rca Corp | Method of fabricating a semiconductor by masking |
DE1544264C3 (de) * | 1965-07-01 | 1974-10-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von Halbleiterschichten durch Abscheiden aus der Gasphase |
US3461550A (en) * | 1965-09-22 | 1969-08-19 | Monti E Aklufi | Method of fabricating semiconductor devices |
US3492174A (en) * | 1966-03-19 | 1970-01-27 | Sony Corp | Method of making a semiconductor device |
US3584264A (en) * | 1968-03-21 | 1971-06-08 | Westinghouse Electric Corp | Encapsulated microcircuit device |
US3542572A (en) * | 1968-06-24 | 1970-11-24 | Corning Glass Works | Germania-silica glasses |
US3632434A (en) * | 1969-01-21 | 1972-01-04 | Jerald L Hutson | Process for glass passivating silicon semiconductor junctions |
JPS4929099B1 (fr) * | 1970-03-27 | 1974-08-01 | ||
US3850686A (en) * | 1971-03-01 | 1974-11-26 | Teledyne Semiconductor Inc | Passivating method |
US3928225A (en) * | 1971-04-08 | 1975-12-23 | Semikron Gleichrichterbau | Glass forming mixture with boron as the doping material for producing conductivity zones in semiconductor bodies by means of diffusion |
US3789023A (en) * | 1972-08-09 | 1974-01-29 | Motorola Inc | Liquid diffusion dopant source for semiconductors |
US3969168A (en) * | 1974-02-28 | 1976-07-13 | Motorola, Inc. | Method for filling grooves and moats used on semiconductor devices |
-
1975
- 1975-02-15 DE DE2506457A patent/DE2506457C3/de not_active Expired
-
1976
- 1976-02-11 US US05/657,317 patent/US4075044A/en not_active Expired - Lifetime
- 1976-02-13 GB GB5822/76A patent/GB1510597A/en not_active Expired
- 1976-02-13 FR FR7604013A patent/FR2301094A1/fr active Granted
Non-Patent Citations (4)
Title |
---|
NV1046/70 * |
NV2194/74 * |
NV700/71 * |
NV8093/72 * |
Also Published As
Publication number | Publication date |
---|---|
GB1510597A (en) | 1978-05-10 |
DE2506457A1 (de) | 1976-09-02 |
FR2301094B1 (fr) | 1982-10-08 |
DE2506457C3 (de) | 1980-01-24 |
DE2506457B2 (de) | 1979-05-23 |
US4075044A (en) | 1978-02-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |