FR2308207A1 - Element semiconducteur, en particulier diode semiconductrice a caracteristique de conduction amelioree - Google Patents
Element semiconducteur, en particulier diode semiconductrice a caracteristique de conduction amelioreeInfo
- Publication number
- FR2308207A1 FR2308207A1 FR7610880A FR7610880A FR2308207A1 FR 2308207 A1 FR2308207 A1 FR 2308207A1 FR 7610880 A FR7610880 A FR 7610880A FR 7610880 A FR7610880 A FR 7610880A FR 2308207 A1 FR2308207 A1 FR 2308207A1
- Authority
- FR
- France
- Prior art keywords
- diode
- junction
- conduction characteristics
- semiconductor
- forward bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 210000000707 wrist Anatomy 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
- H10D8/75—Tunnel-effect PN diodes, e.g. Esaki diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD185436A DD118336A1 (de) | 1975-04-15 | 1975-04-15 | Halbleiteranordnung,insbesondere halbleiterdiode mit verbesserter durchlasskennlinie |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2308207A1 true FR2308207A1 (fr) | 1976-11-12 |
| FR2308207B3 FR2308207B3 (enExample) | 1979-01-05 |
Family
ID=5499938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7610880A Granted FR2308207A1 (fr) | 1975-04-15 | 1976-04-13 | Element semiconducteur, en particulier diode semiconductrice a caracteristique de conduction amelioree |
Country Status (5)
| Country | Link |
|---|---|
| CS (1) | CS201113B1 (enExample) |
| DD (1) | DD118336A1 (enExample) |
| DE (1) | DE2603935A1 (enExample) |
| FR (1) | FR2308207A1 (enExample) |
| IT (1) | IT1058060B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2719457A1 (de) * | 1977-04-30 | 1978-11-02 | California Linear Circuits Inc | Halbleiter-uebergang |
-
1975
- 1975-04-15 DD DD185436A patent/DD118336A1/xx unknown
-
1976
- 1976-02-03 DE DE2603935*[A patent/DE2603935A1/de not_active Ceased
- 1976-04-01 IT IT48835/76A patent/IT1058060B/it active
- 1976-04-06 CS CS762262A patent/CS201113B1/cs unknown
- 1976-04-13 FR FR7610880A patent/FR2308207A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2603935A1 (de) | 1976-10-28 |
| CS201113B1 (en) | 1980-10-31 |
| DD118336A1 (de) | 1976-02-20 |
| FR2308207B3 (enExample) | 1979-01-05 |
| IT1058060B (it) | 1982-04-10 |
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