FR2305028A1 - Diode zener compensee en temperature - Google Patents

Diode zener compensee en temperature

Info

Publication number
FR2305028A1
FR2305028A1 FR7607987A FR7607987A FR2305028A1 FR 2305028 A1 FR2305028 A1 FR 2305028A1 FR 7607987 A FR7607987 A FR 7607987A FR 7607987 A FR7607987 A FR 7607987A FR 2305028 A1 FR2305028 A1 FR 2305028A1
Authority
FR
France
Prior art keywords
junction
breakdown
emitter
emitting
temperature compensated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7607987A
Other languages
English (en)
French (fr)
Other versions
FR2305028B3 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2305028A1 publication Critical patent/FR2305028A1/fr
Application granted granted Critical
Publication of FR2305028B3 publication Critical patent/FR2305028B3/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • H10D8/25Zener diodes 

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7607987A 1975-03-21 1976-03-19 Diode zener compensee en temperature Granted FR2305028A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752512383 DE2512383A1 (de) 1975-03-21 1975-03-21 Temperaturkompensierte zenerdiode

Publications (2)

Publication Number Publication Date
FR2305028A1 true FR2305028A1 (fr) 1976-10-15
FR2305028B3 FR2305028B3 (enrdf_load_stackoverflow) 1978-12-15

Family

ID=5941995

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7607987A Granted FR2305028A1 (fr) 1975-03-21 1976-03-19 Diode zener compensee en temperature

Country Status (3)

Country Link
DE (1) DE2512383A1 (enrdf_load_stackoverflow)
FR (1) FR2305028A1 (enrdf_load_stackoverflow)
IT (1) IT1057587B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608320A1 (fr) * 1986-12-16 1988-06-17 Thomson Semiconducteurs Dispositif de protection contre les surtensions a faible capacite

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2838605A1 (de) * 1978-09-05 1980-03-06 Bosch Gmbh Robert Planare halbleiterdiode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608320A1 (fr) * 1986-12-16 1988-06-17 Thomson Semiconducteurs Dispositif de protection contre les surtensions a faible capacite
EP0272184A1 (fr) * 1986-12-16 1988-06-22 Sgs-Thomson Microelectronics S.A. Dispositif de protection contre les surtensions à faible capacité

Also Published As

Publication number Publication date
FR2305028B3 (enrdf_load_stackoverflow) 1978-12-15
IT1057587B (it) 1982-03-30
DE2512383A1 (de) 1976-09-23

Similar Documents

Publication Publication Date Title
SE7507080L (sv) Halvledaranordning
SE7900337L (sv) Halvledaranordning
KR870005474A (ko) 래치·엎을 방지한 Bi-CMOS반도체 장치
GB1230879A (enrdf_load_stackoverflow)
ES421881A1 (es) Dispositivo semiconductor de varias uniones.
ES8301391A1 (es) Un conmutador semiconductor de alta tension
FR2305028A1 (fr) Diode zener compensee en temperature
SE8603364D0 (sv) Antisaturation circuit for integrated pnp transistor with intervention characteristic definible according to a preset function
JPS5297684A (en) Semiconductor element
ES308304A1 (es) Perfeccionamientos en dispositivos semiconductores
ES475104A1 (es) Un circuito logico integrado.
JPS5489581A (en) Composite transistor circuit
JPS5243374A (en) Semiconductor device
JPS5333071A (en) Complementary type insulated gate semiconductor circuit
SE7909541L (sv) Optiskt akriverbar halvledarkomponent
JPS5436189A (en) Semiconductor device
JPS5615068A (en) Semiconductor device and manufacture thereof
GB1334943A (en) Semiconductor element
ES352147A1 (es) Una disposicion de circuito monolitico que tiene un par de transistores complementarios adaptados.
GB1182447A (en) Semiconductor Element with Transverse-Field Emitter
JPS52133761A (en) Integrated circuit
JPS545392A (en) Semiconductor integrated circuit and its manufacture
JPS53145579A (en) Semiconductor device
JPS5438779A (en) Semiconductor integrated circuit device
JPS52109881A (en) Semiconductor device with protective unit

Legal Events

Date Code Title Description
ST Notification of lapse