FR2305021A1 - Procede pour l'application de glacures sur la surface des parties actives d'elements a semi-conducteurs, dispositif de serrage pour la mise en oeuvre du procede et application de celui-ci a la passivation des jonctions pn - Google Patents

Procede pour l'application de glacures sur la surface des parties actives d'elements a semi-conducteurs, dispositif de serrage pour la mise en oeuvre du procede et application de celui-ci a la passivation des jonctions pn

Info

Publication number
FR2305021A1
FR2305021A1 FR7607634A FR7607634A FR2305021A1 FR 2305021 A1 FR2305021 A1 FR 2305021A1 FR 7607634 A FR7607634 A FR 7607634A FR 7607634 A FR7607634 A FR 7607634A FR 2305021 A1 FR2305021 A1 FR 2305021A1
Authority
FR
France
Prior art keywords
fusing
glass powder
semiconductor devices
active semiconductor
spraying dry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7607634A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2305021A1 publication Critical patent/FR2305021A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Casings For Electric Apparatus (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
FR7607634A 1975-03-20 1976-03-17 Procede pour l'application de glacures sur la surface des parties actives d'elements a semi-conducteurs, dispositif de serrage pour la mise en oeuvre du procede et application de celui-ci a la passivation des jonctions pn Withdrawn FR2305021A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH355275A CH591762A5 (enrdf_load_html_response) 1975-03-20 1975-03-20

Publications (1)

Publication Number Publication Date
FR2305021A1 true FR2305021A1 (fr) 1976-10-15

Family

ID=4258446

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7607634A Withdrawn FR2305021A1 (fr) 1975-03-20 1976-03-17 Procede pour l'application de glacures sur la surface des parties actives d'elements a semi-conducteurs, dispositif de serrage pour la mise en oeuvre du procede et application de celui-ci a la passivation des jonctions pn

Country Status (4)

Country Link
JP (1) JPS51118966A (enrdf_load_html_response)
CH (1) CH591762A5 (enrdf_load_html_response)
DE (2) DE2518666A1 (enrdf_load_html_response)
FR (1) FR2305021A1 (enrdf_load_html_response)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469000A1 (fr) * 1979-10-30 1981-05-08 Silicium Semiconducteur Ssc Structure de thyristor tres haute tension glassive et son procede de fabrication
FR2515874A1 (fr) * 1981-11-05 1983-05-06 Comp Generale Electricite Procede d'encapsulation plastique de cellules solaires

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367363A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device
DE3832750A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterbauelement
DE3832732A1 (de) * 1988-09-27 1990-03-29 Asea Brown Boveri Leistungshalbleiterdiode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1438826A (fr) * 1964-06-30 1966-05-13 Ibm Formation de films de verre par pulvérisation réactive
FR1485806A (fr) * 1965-06-28 1967-06-23 Ibm Procédé et appareil permettant de déposer des particules sur un objet
US3473959A (en) * 1964-08-10 1969-10-21 Licentia Gmbh Method for coating semiconductors and apparatus
DE2037524A1 (de) * 1969-07-30 1971-02-11 General Electric Co , Schenectady NY (V St A ) Verfahren zur Herstellung eines in Glas gekapselten Halbleiterbauelements

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1438826A (fr) * 1964-06-30 1966-05-13 Ibm Formation de films de verre par pulvérisation réactive
US3473959A (en) * 1964-08-10 1969-10-21 Licentia Gmbh Method for coating semiconductors and apparatus
FR1485806A (fr) * 1965-06-28 1967-06-23 Ibm Procédé et appareil permettant de déposer des particules sur un objet
DE2037524A1 (de) * 1969-07-30 1971-02-11 General Electric Co , Schenectady NY (V St A ) Verfahren zur Herstellung eines in Glas gekapselten Halbleiterbauelements

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV8021/69 *
NV8137/73 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469000A1 (fr) * 1979-10-30 1981-05-08 Silicium Semiconducteur Ssc Structure de thyristor tres haute tension glassive et son procede de fabrication
FR2515874A1 (fr) * 1981-11-05 1983-05-06 Comp Generale Electricite Procede d'encapsulation plastique de cellules solaires

Also Published As

Publication number Publication date
JPS51118966A (en) 1976-10-19
DE2518666A1 (de) 1976-09-30
DE7513490U (de) 1977-05-26
CH591762A5 (enrdf_load_html_response) 1977-09-30

Similar Documents

Publication Publication Date Title
GB1273197A (en) Improvements in or relating to the manufacture of semiconductor devices
JPS6421441A (en) Applicating method
FR2305021A1 (fr) Procede pour l'application de glacures sur la surface des parties actives d'elements a semi-conducteurs, dispositif de serrage pour la mise en oeuvre du procede et application de celui-ci a la passivation des jonctions pn
ES2083154T3 (es) Procedimiento de deposito de una capa de oxido de silicio unida a un sustrato de material polimero.
JPS5267353A (en) Electrostatic chuck
IT1061594B (it) Procedimento per la applicazione di un rivestimento antiriflessione su sottostrati di plastica in particolare lenti
JPS5349955A (en) Spin coating method
IT1057683B (it) Procedimento per la produzione di pellicole anodiche sigillate di ossido sull alluminio e sueleghe in preparazione al rivestimento o verniciatura
JPS5241654A (en) Formation of roughened coating layer by electro-phoresis and coating c omposition for the same
JPS5222881A (en) Thin film etching system on semiconductor base plate
JPS52155494A (en) Process for w orking parallel plane of wafer
JPS57104851A (en) Semiconductor sensor
JPH06504877A (ja) 電場−援助接着
JPS51112182A (en) Method and apparatus for generating plasma acted by magnetism to form thin film on surface of solid substrate
JPS5350979A (en) Method of treatment of thin oxide layer on silicon substrate
JPS55146419A (en) Display device
JPS5278939A (en) Application of thin coating film
JPS5780647A (en) Pulverized sample supporting method
JPS562872A (en) Processing method of fluorine contained resin
JPS5541702A (en) Glass film coating method for semiconductor
JPS5571043A (en) Semiconductor device
SU632930A1 (ru) Способ изготовлени образца дл испытани на сцепл емость покрыти с металлической подложкой
JPS5651829A (en) Glassivating method for bevel-type semiconductor element
JPS5651830A (en) Glassivating method for bevel-type semiconductor element
JPS57100768A (en) Manufacture of field effect semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse