FR2305021A1 - Thin glass film passivation - of active semiconductor devices by spraying dry glass powder on surface and fusing it - Google Patents

Thin glass film passivation - of active semiconductor devices by spraying dry glass powder on surface and fusing it

Info

Publication number
FR2305021A1
FR2305021A1 FR7607634A FR7607634A FR2305021A1 FR 2305021 A1 FR2305021 A1 FR 2305021A1 FR 7607634 A FR7607634 A FR 7607634A FR 7607634 A FR7607634 A FR 7607634A FR 2305021 A1 FR2305021 A1 FR 2305021A1
Authority
FR
France
Prior art keywords
fusing
glass powder
semiconductor devices
active semiconductor
spraying dry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7607634A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2305021A1 publication Critical patent/FR2305021A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Casings For Electric Apparatus (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

Thin glass films are applied to the surface of active semiconductor devices by spraying dry glass powder electrostatically on the surface, followed by fusing it. The glass powder has a grain size of 5-30 mu, i.e. as large as possible but smaller than the desird layer thickness. The devices are held by permanent magnets embedded in insulating holders made of TEflon (RTM). This is a simple and accurate method which ensures a uniform coating. Contamination or chemical attack of the surfaces to be passivated by bonding or suspension agent is eliminated; the complications of electrochemical processes during electrochemical processes during electrophoresis is obviated.
FR7607634A 1975-03-20 1976-03-17 Thin glass film passivation - of active semiconductor devices by spraying dry glass powder on surface and fusing it Withdrawn FR2305021A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH355275A CH591762A5 (en) 1975-03-20 1975-03-20

Publications (1)

Publication Number Publication Date
FR2305021A1 true FR2305021A1 (en) 1976-10-15

Family

ID=4258446

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7607634A Withdrawn FR2305021A1 (en) 1975-03-20 1976-03-17 Thin glass film passivation - of active semiconductor devices by spraying dry glass powder on surface and fusing it

Country Status (4)

Country Link
JP (1) JPS51118966A (en)
CH (1) CH591762A5 (en)
DE (2) DE2518666A1 (en)
FR (1) FR2305021A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469000A1 (en) * 1979-10-30 1981-05-08 Silicium Semiconducteur Ssc Vitrified high voltage thyristor - has concave rim and glass layer to prevent surface breakdown
FR2515874A1 (en) * 1981-11-05 1983-05-06 Comp Generale Electricite Encapsulation of photocell arrays - by electrostatic powder deposition for rapid application without incurring voids

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367363A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device
DE3832732A1 (en) * 1988-09-27 1990-03-29 Asea Brown Boveri PERFORMANCE SEMICONDUCTOR DIODE
DE3832750A1 (en) * 1988-09-27 1990-03-29 Asea Brown Boveri PERFORMANCE SEMICONDUCTOR COMPONENT

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1438826A (en) * 1964-06-30 1966-05-13 Ibm Reactive spraying of glass films
FR1485806A (en) * 1965-06-28 1967-06-23 Ibm Method and apparatus for depositing particles on an object
US3473959A (en) * 1964-08-10 1969-10-21 Licentia Gmbh Method for coating semiconductors and apparatus
DE2037524A1 (en) * 1969-07-30 1971-02-11 General Electric Co , Schenectady NY (V St A ) Process for the production of a semiconductor component encapsulated in glass

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1438826A (en) * 1964-06-30 1966-05-13 Ibm Reactive spraying of glass films
US3473959A (en) * 1964-08-10 1969-10-21 Licentia Gmbh Method for coating semiconductors and apparatus
FR1485806A (en) * 1965-06-28 1967-06-23 Ibm Method and apparatus for depositing particles on an object
DE2037524A1 (en) * 1969-07-30 1971-02-11 General Electric Co , Schenectady NY (V St A ) Process for the production of a semiconductor component encapsulated in glass

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV8021/69 *
NV8137/73 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469000A1 (en) * 1979-10-30 1981-05-08 Silicium Semiconducteur Ssc Vitrified high voltage thyristor - has concave rim and glass layer to prevent surface breakdown
FR2515874A1 (en) * 1981-11-05 1983-05-06 Comp Generale Electricite Encapsulation of photocell arrays - by electrostatic powder deposition for rapid application without incurring voids

Also Published As

Publication number Publication date
CH591762A5 (en) 1977-09-30
DE2518666A1 (en) 1976-09-30
DE7513490U (en) 1977-05-26
JPS51118966A (en) 1976-10-19

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Legal Events

Date Code Title Description
ST Notification of lapse