FR2302592A1 - Transistor a effet de champ a barriere de schottky a double porte - Google Patents

Transistor a effet de champ a barriere de schottky a double porte

Info

Publication number
FR2302592A1
FR2302592A1 FR7605289A FR7605289A FR2302592A1 FR 2302592 A1 FR2302592 A1 FR 2302592A1 FR 7605289 A FR7605289 A FR 7605289A FR 7605289 A FR7605289 A FR 7605289A FR 2302592 A1 FR2302592 A1 FR 2302592A1
Authority
FR
France
Prior art keywords
field effect
effect transistor
schottky barrier
double door
barrier field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7605289A
Other languages
English (en)
French (fr)
Other versions
FR2302592B1 (enExample
Inventor
Masaki Ogawa
Takashi Furutsuka
Masaoki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2374475A external-priority patent/JPS51112184A/ja
Priority claimed from JP1777476A external-priority patent/JPS5931870B2/ja
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of FR2302592A1 publication Critical patent/FR2302592A1/fr
Application granted granted Critical
Publication of FR2302592B1 publication Critical patent/FR2302592B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0618—Manufacture or treatment of FETs having Schottky gates of lateral Schottky gate FETs having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking
FR7605289A 1975-02-26 1976-02-25 Transistor a effet de champ a barriere de schottky a double porte Granted FR2302592A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2374475A JPS51112184A (en) 1975-02-26 1975-02-26 Shottky barrier layer gate type twine gates field-effect transistor an d its making
JP1777476A JPS5931870B2 (ja) 1976-02-20 1976-02-20 双ゲ−ト・シヨツトキ障壁ゲ−ト型電界効果トランジスタとその製造方法およびその駆動方法

Publications (2)

Publication Number Publication Date
FR2302592A1 true FR2302592A1 (fr) 1976-09-24
FR2302592B1 FR2302592B1 (enExample) 1982-07-09

Family

ID=26354338

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7605289A Granted FR2302592A1 (fr) 1975-02-26 1976-02-25 Transistor a effet de champ a barriere de schottky a double porte

Country Status (4)

Country Link
US (1) US4048646A (enExample)
DE (1) DE2607898A1 (enExample)
FR (1) FR2302592A1 (enExample)
GB (1) GB1543363A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005351A1 (en) * 1978-04-27 1979-11-14 Xerox Corporation A method of making a narrow gate MESFET
FR2431768A1 (fr) * 1978-07-20 1980-02-15 Labo Electronique Physique Perfectionnement au procede de fabrication de dispositifs semi-conducteurs par auto-alignement et dispositifs obtenus
EP0087841A1 (fr) * 1982-03-03 1983-09-07 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Utilisation d'un transistor à effet de champ, du type à double grille et île ohmique intercalée, en vue de la réjection d'une bande de fréquences
FR2524713A1 (fr) * 1982-04-02 1983-10-07 Thomson Csf Transistor a effet de champ du type planar a grille supplementaire enterree et procede de realisation d'un tel transistor

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
US4377899A (en) * 1979-11-19 1983-03-29 Sumitomo Electric Industries, Ltd. Method of manufacturing Schottky field-effect transistors utilizing shadow masking
US4389660A (en) * 1980-07-31 1983-06-21 Rockwell International Corporation High power solid state switch
DE3031909A1 (de) * 1980-08-23 1982-04-08 Heinrich Dipl.-Ing. 4150 Krefeld Dämbkäs Feldeffekttransistor
SE8101994L (sv) * 1981-03-27 1982-09-28 Tove Per Arne Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
JPS5874084A (ja) * 1981-10-29 1983-05-04 Fujitsu Ltd 半導体装置
DE3216776C2 (de) * 1982-05-05 1985-07-11 Telefunken electronic GmbH, 7100 Heilbronn Hochfrequenzmischstufe
CA1200326A (en) * 1982-11-26 1986-02-04 Franco N. Sechi High-power dual-gate field-effect transistor
US4608583A (en) * 1983-05-23 1986-08-26 Rca Corporation FET amplifier
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
FR2567325B1 (fr) * 1984-07-03 1986-11-14 Thomson Csf Element a capacite variable, commandable par une tension continue
US4734751A (en) * 1985-05-20 1988-03-29 General Electric Company Signal scaling MESFET of a segmented dual gate design
US4679311A (en) * 1985-12-12 1987-07-14 Allied Corporation Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
US4947220A (en) * 1987-08-27 1990-08-07 Yoder Max N Yoked, orthogonally distributed equal reactance amplifier
JPH022179A (ja) * 1988-06-13 1990-01-08 Fujitsu Ltd メタル・セミコンダクタ・ｆｅｔ
US5309006A (en) * 1991-11-05 1994-05-03 Itt Corporation FET crossbar switch device particularly useful for microwave applications
JP3148010B2 (ja) * 1992-09-11 2001-03-19 住友電気工業株式会社 ミキサ回路
US5602501A (en) * 1992-09-03 1997-02-11 Sumitomo Electric Industries, Ltd. Mixer circuit using a dual gate field effect transistor
DE4432727C1 (de) * 1994-09-14 1996-03-14 Siemens Ag Integrierte Schaltungsstruktur mit einem aktiven Mikrowellenbauelement und mindestens einem passiven Bauelement
GB2304993B (en) * 1995-08-23 1997-08-06 Toshiba Cambridge Res Center Semiconductor device
US6472258B1 (en) * 2000-11-13 2002-10-29 International Business Machines Corporation Double gate trench transistor
JP2003045978A (ja) * 2001-07-30 2003-02-14 Niigata Seimitsu Kk 半導体装置
EP1950326A1 (en) * 2007-01-29 2008-07-30 Interuniversitair Microelektronica Centrum Method for removal of bulk metal contamination from III-V semiconductor substrates

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3706014A (en) * 1970-09-11 1972-12-12 Rca Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005351A1 (en) * 1978-04-27 1979-11-14 Xerox Corporation A method of making a narrow gate MESFET
FR2431768A1 (fr) * 1978-07-20 1980-02-15 Labo Electronique Physique Perfectionnement au procede de fabrication de dispositifs semi-conducteurs par auto-alignement et dispositifs obtenus
EP0087841A1 (fr) * 1982-03-03 1983-09-07 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Utilisation d'un transistor à effet de champ, du type à double grille et île ohmique intercalée, en vue de la réjection d'une bande de fréquences
FR2522902A1 (fr) * 1982-03-03 1983-09-09 Labo Electronique Physique Utilisation d'un transistor a effet de champ, du type a double-grille et ile ohmique intercalee, en vue de la rejection d'une bande de frequences
FR2524713A1 (fr) * 1982-04-02 1983-10-07 Thomson Csf Transistor a effet de champ du type planar a grille supplementaire enterree et procede de realisation d'un tel transistor
EP0091342A1 (fr) * 1982-04-02 1983-10-12 Thomson-Csf Procédé de réalisation d'un transistor à effet de champ du type planar à grille supplémentaire enterrée

Also Published As

Publication number Publication date
DE2607898A1 (de) 1976-09-23
GB1543363A (en) 1979-04-04
FR2302592B1 (enExample) 1982-07-09
US4048646A (en) 1977-09-13

Similar Documents

Publication Publication Date Title
FR2302592A1 (fr) Transistor a effet de champ a barriere de schottky a double porte
BE827147A (fr) Transistors a effet de champ a porte isolee a appauvrissement profond
BE776013A (fr) Transistor-memoire isole a porte et effet de champ
FR2325149A1 (fr) Memoire a transistors a effet de champ
BE841059A (fr) Amplificateur de detection a transistors a effet de champ
BR7604849A (pt) Dispositivo de batente e de retencao de porta aberta
BE801494A (fr) Dispositif de fermeture hermetique a vantail coulissant
IT1115690B (it) Dispositivo perfezionato a barriera di schottky
IT1051167B (it) Dispositivo di rotazione per porte
FR2309042A1 (fr) Dispositif semi-conducteur du type a barriere de schottky
FR2335912A1 (fr) Registre dynamique a decalage employant des transistors a effet de champ a porte isolee
FR2474761B1 (fr) Procede de fabrication de transistors a effet de champ a porte formant barriere de schottky
FR2290041A1 (fr) Transistor a effet de champ avec une metallisation de recouvrement
FR2321194A1 (fr) Transistor a effet de champ a declencheur isole
BE783428A (fr) Barriere coulissante en porte a faux
BE835428A (fr) Dispositif comportant deux transistors a effet de champ complementaires
SE7501659L (sv) Dorrstengningsanordning
CH462327A (fr) Transistor à effet de champ à porte isolée
BE818547A (fr) Dispositif semi-conducteur comportant un transistor a effet de champ a porte isolee et procede de fabrication
BE752480A (fr) Dispositif semiconducteur comportant un transistor a effet de champ a electrode de porte isolee
BE746706A (fr) Transistor a effet de champ comportant une electrode-porte isolee
BE796577A (fr) Dispositif semi-conducteur a barriere de schottky
BR7704016A (pt) Dispositivo de fechamento de portas e semelhantes
BE820447A (fr) Dispositif a transistors a effet de champ
FR1491166A (fr) Transistor à effet de champ, et à porte isolée

Legal Events

Date Code Title Description
ST Notification of lapse