GB1543363A - Dual-gate schottky barrier gate field effect transistors - Google Patents

Dual-gate schottky barrier gate field effect transistors

Info

Publication number
GB1543363A
GB1543363A GB7460/76A GB746076A GB1543363A GB 1543363 A GB1543363 A GB 1543363A GB 7460/76 A GB7460/76 A GB 7460/76A GB 746076 A GB746076 A GB 746076A GB 1543363 A GB1543363 A GB 1543363A
Authority
GB
United Kingdom
Prior art keywords
gate
dual
field effect
effect transistors
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7460/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2374475A external-priority patent/JPS51112184A/ja
Priority claimed from JP1777476A external-priority patent/JPS5931870B2/ja
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of GB1543363A publication Critical patent/GB1543363A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0618—Manufacture or treatment of FETs having Schottky gates of lateral Schottky gate FETs having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/873—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having multiple gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking
GB7460/76A 1975-02-26 1976-02-25 Dual-gate schottky barrier gate field effect transistors Expired GB1543363A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2374475A JPS51112184A (en) 1975-02-26 1975-02-26 Shottky barrier layer gate type twine gates field-effect transistor an d its making
JP1777476A JPS5931870B2 (ja) 1976-02-20 1976-02-20 双ゲ−ト・シヨツトキ障壁ゲ−ト型電界効果トランジスタとその製造方法およびその駆動方法

Publications (1)

Publication Number Publication Date
GB1543363A true GB1543363A (en) 1979-04-04

Family

ID=26354338

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7460/76A Expired GB1543363A (en) 1975-02-26 1976-02-25 Dual-gate schottky barrier gate field effect transistors

Country Status (4)

Country Link
US (1) US4048646A (enExample)
DE (1) DE2607898A1 (enExample)
FR (1) FR2302592A1 (enExample)
GB (1) GB1543363A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2120035A (en) * 1982-05-05 1983-11-23 Licentia Gmbh High frequency mixer stage

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
US4253229A (en) * 1978-04-27 1981-03-03 Xerox Corporation Self-aligned narrow gate MESFET process
FR2431768A1 (fr) * 1978-07-20 1980-02-15 Labo Electronique Physique Perfectionnement au procede de fabrication de dispositifs semi-conducteurs par auto-alignement et dispositifs obtenus
US4377899A (en) * 1979-11-19 1983-03-29 Sumitomo Electric Industries, Ltd. Method of manufacturing Schottky field-effect transistors utilizing shadow masking
US4389660A (en) * 1980-07-31 1983-06-21 Rockwell International Corporation High power solid state switch
DE3031909A1 (de) * 1980-08-23 1982-04-08 Heinrich Dipl.-Ing. 4150 Krefeld Dämbkäs Feldeffekttransistor
SE8101994L (sv) * 1981-03-27 1982-09-28 Tove Per Arne Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
JPS5874084A (ja) * 1981-10-29 1983-05-04 Fujitsu Ltd 半導体装置
FR2522902A1 (fr) * 1982-03-03 1983-09-09 Labo Electronique Physique Utilisation d'un transistor a effet de champ, du type a double-grille et ile ohmique intercalee, en vue de la rejection d'une bande de frequences
FR2524713A1 (fr) * 1982-04-02 1983-10-07 Thomson Csf Transistor a effet de champ du type planar a grille supplementaire enterree et procede de realisation d'un tel transistor
CA1200326A (en) * 1982-11-26 1986-02-04 Franco N. Sechi High-power dual-gate field-effect transistor
US4608583A (en) * 1983-05-23 1986-08-26 Rca Corporation FET amplifier
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
FR2567325B1 (fr) * 1984-07-03 1986-11-14 Thomson Csf Element a capacite variable, commandable par une tension continue
US4734751A (en) * 1985-05-20 1988-03-29 General Electric Company Signal scaling MESFET of a segmented dual gate design
US4679311A (en) * 1985-12-12 1987-07-14 Allied Corporation Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
US4947220A (en) * 1987-08-27 1990-08-07 Yoder Max N Yoked, orthogonally distributed equal reactance amplifier
JPH022179A (ja) * 1988-06-13 1990-01-08 Fujitsu Ltd メタル・セミコンダクタ・ｆｅｔ
US5309006A (en) * 1991-11-05 1994-05-03 Itt Corporation FET crossbar switch device particularly useful for microwave applications
JP3148010B2 (ja) * 1992-09-11 2001-03-19 住友電気工業株式会社 ミキサ回路
US5602501A (en) * 1992-09-03 1997-02-11 Sumitomo Electric Industries, Ltd. Mixer circuit using a dual gate field effect transistor
DE4432727C1 (de) * 1994-09-14 1996-03-14 Siemens Ag Integrierte Schaltungsstruktur mit einem aktiven Mikrowellenbauelement und mindestens einem passiven Bauelement
GB2304993B (en) * 1995-08-23 1997-08-06 Toshiba Cambridge Res Center Semiconductor device
US6472258B1 (en) * 2000-11-13 2002-10-29 International Business Machines Corporation Double gate trench transistor
JP2003045978A (ja) * 2001-07-30 2003-02-14 Niigata Seimitsu Kk 半導体装置
EP1950326A1 (en) * 2007-01-29 2008-07-30 Interuniversitair Microelektronica Centrum Method for removal of bulk metal contamination from III-V semiconductor substrates

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3706014A (en) * 1970-09-11 1972-12-12 Rca Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2120035A (en) * 1982-05-05 1983-11-23 Licentia Gmbh High frequency mixer stage
US4563772A (en) * 1982-05-05 1986-01-07 Licentia Patent-Verwaltungs-Gmbh High frequency mixer stage

Also Published As

Publication number Publication date
US4048646A (en) 1977-09-13
DE2607898A1 (de) 1976-09-23
FR2302592B1 (enExample) 1982-07-09
FR2302592A1 (fr) 1976-09-24

Similar Documents

Publication Publication Date Title
GB1543363A (en) Dual-gate schottky barrier gate field effect transistors
CA1024266A (en) Deep depletion insulated gate field effect transistors
GB1556276A (en) Insulated gate field effect transistors
JPS5239381A (en) Insulated gate fet transistor
JPS51135382A (en) Mos transistor
CA1028067A (en) Schottky gate field effect transistor
CA985800A (en) Application of facet-growth to self-aligned schottky barrier gate field effect transistors
GB1543074A (en) Bistable field effect transistor devices
GB1543227A (en) Field effect transistor circuits
JPS5283181A (en) Insulated gate fet transistor device
HK28081A (en) Process for fabricating insulated gate field effect transistor structure
CA973938A (en) Threshold gate circuits empolying field-effect transistors
JPS5518100A (en) Insulated gate field effect transistor
CA966935A (en) Gate protective device for insulated gate field-effect transistors
CA1027257A (en) Overlay metallization field effect transistor
JPS54125986A (en) Semiconductor including insulated gate type transistor
JPS5266381A (en) Fet transistor
NL7609052A (nl) Veldeffekttransistor.
CA996640A (en) Flip-flop circuits utilizing insulated gate field effect transistors
JPS54147787A (en) Insulated gate field effect transistor
CA1009708A (en) Hysteresis circuits using insulated gate field effect transistors
GB2015251A (en) Logic gate having a multi-drain mos transistor
JPS5553463A (en) Insulated gate field effect transistor
JPS5219980A (en) Gate turnnoff thyristor
GB1543132A (en) Field-effect transistors

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930225