FR2005929A1 - Transistor a effet de champ et a porte isolee protege contre les surtensions - Google Patents

Transistor a effet de champ et a porte isolee protege contre les surtensions

Info

Publication number
FR2005929A1
FR2005929A1 FR6910670A FR6910670A FR2005929A1 FR 2005929 A1 FR2005929 A1 FR 2005929A1 FR 6910670 A FR6910670 A FR 6910670A FR 6910670 A FR6910670 A FR 6910670A FR 2005929 A1 FR2005929 A1 FR 2005929A1
Authority
FR
France
Prior art keywords
field effect
effect transistor
protected against
insulated door
against overvoltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR6910670A
Other languages
English (en)
Other versions
FR2005929B1 (fr
Inventor
Khajezadeh Heshmat
Alfred Jacobus Lewis Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Priority to FR6919670A priority Critical patent/FR2045176A5/fr
Publication of FR2005929A1 publication Critical patent/FR2005929A1/fr
Application granted granted Critical
Publication of FR2005929B1 publication Critical patent/FR2005929B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR6910670A 1968-04-10 1969-04-08 Transistor a effet de champ et a porte isolee protege contre les surtensions Granted FR2005929A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR6919670A FR2045176A5 (fr) 1969-04-08 1969-06-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72012868A 1968-04-10 1968-04-10

Publications (2)

Publication Number Publication Date
FR2005929A1 true FR2005929A1 (fr) 1969-12-19
FR2005929B1 FR2005929B1 (fr) 1974-09-20

Family

ID=24892770

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6910670A Granted FR2005929A1 (fr) 1968-04-10 1969-04-08 Transistor a effet de champ et a porte isolee protege contre les surtensions

Country Status (7)

Country Link
US (1) US3512058A (fr)
JP (1) JPS549030B1 (fr)
DE (1) DE1918222C3 (fr)
FR (1) FR2005929A1 (fr)
GB (1) GB1197154A (fr)
MY (1) MY7300388A (fr)
NL (1) NL163676C (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0157389A2 (fr) * 1984-03-31 1985-10-09 Kabushiki Kaisha Toshiba Dispositif de protection pour un transistor MOS
EP0161446A2 (fr) * 1984-03-31 1985-11-21 Kabushiki Kaisha Toshiba Circuit intégré semi-conducteur comprenant un transistor de protection et un transistor MOS ayant une structure LDD
FR2589279A1 (fr) * 1985-10-29 1987-04-30 Sgs Microelettronica Spa Dispositif semi-conducteur electronique pour proteger des circuits integres contre des decharges electrostatiques et procede pour le fabriquer
FR2597661A1 (fr) * 1986-02-18 1987-10-23 Sgs Microelettronica Spa Protection des circuits integres contre les decharges electriques

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
US3601625A (en) * 1969-06-25 1971-08-24 Texas Instruments Inc Mosic with protection against voltage surges
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
JPS4836598B1 (fr) * 1969-09-05 1973-11-06
JPS5115394B1 (fr) * 1969-11-20 1976-05-17
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
JPS5122794B1 (fr) * 1970-06-24 1976-07-12
US3740620A (en) * 1971-06-22 1973-06-19 Ibm Storage system having heterojunction-homojunction devices
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
DE2511488A1 (de) * 1975-03-15 1976-09-23 Bosch Gmbh Robert Cmos-inverter
JPS5422781A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Insulator gate protective semiconductor device
US4264857A (en) * 1978-06-30 1981-04-28 International Business Machines Corporation Constant voltage threshold device
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
US4543597A (en) * 1982-06-30 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic semiconductor memory and manufacturing method thereof
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
IT1226438B (it) * 1988-07-05 1991-01-15 Sgs Thomson Microelectronics Circuito elettronico con dispositivo di protezione da variazioni di tensione della batteria di alimentazione.
JP3318774B2 (ja) * 1992-06-29 2002-08-26 ソニー株式会社 半導体装置および固体撮像装置
JP3456242B2 (ja) * 1993-01-07 2003-10-14 セイコーエプソン株式会社 半導体装置及びその製造方法
DE102005045178B3 (de) 2005-09-21 2006-10-12 Miele & Cie. Kg Kunststofflaugenbehälter für eine Waschmaschine und Verfahren zur Herstellung eines Kunststofflaugenbehälters

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1551956A (fr) * 1966-09-23 1969-01-03

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278853A (en) * 1963-11-21 1966-10-11 Westinghouse Electric Corp Integrated circuits with field effect transistors and diode bias means
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
FR1484322A (fr) * 1965-06-22 1967-06-09 Philips Nv Composant semi-conducteur complexe

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1551956A (fr) * 1966-09-23 1969-01-03

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE "PROCEEDINGS OF THE IEEE" VOLUME 56, JUILLET 1968 "PROTECTIVE DEVICE FOR MOS INTE-GRATED CIRCUITS" RAMACHANDRA R.IYER PAGES 1223-1224.) *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0157389A2 (fr) * 1984-03-31 1985-10-09 Kabushiki Kaisha Toshiba Dispositif de protection pour un transistor MOS
EP0161446A2 (fr) * 1984-03-31 1985-11-21 Kabushiki Kaisha Toshiba Circuit intégré semi-conducteur comprenant un transistor de protection et un transistor MOS ayant une structure LDD
EP0157389A3 (en) * 1984-03-31 1986-11-20 Kabushiki Kaisha Toshiba Protection device for a mos transistor
EP0161446A3 (fr) * 1984-03-31 1986-11-26 Kabushiki Kaisha Toshiba Circuit intégré semi-conducteur comprenant un transistor de protection et un transistor MOS ayant une structure LDD
US4725915A (en) * 1984-03-31 1988-02-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
FR2589279A1 (fr) * 1985-10-29 1987-04-30 Sgs Microelettronica Spa Dispositif semi-conducteur electronique pour proteger des circuits integres contre des decharges electrostatiques et procede pour le fabriquer
FR2597661A1 (fr) * 1986-02-18 1987-10-23 Sgs Microelettronica Spa Protection des circuits integres contre les decharges electriques

Also Published As

Publication number Publication date
NL163676C (nl) 1980-09-15
MY7300388A (en) 1973-12-31
NL6905455A (fr) 1969-10-14
DE1918222B2 (de) 1981-06-19
JPS549030B1 (fr) 1979-04-20
GB1197154A (en) 1970-07-01
DE1918222C3 (de) 1982-03-04
US3512058A (en) 1970-05-12
DE1918222A1 (de) 1970-02-05
NL163676B (nl) 1980-04-15
FR2005929B1 (fr) 1974-09-20

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Legal Events

Date Code Title Description
ST Notification of lapse