FR1551956A - - Google Patents

Info

Publication number
FR1551956A
FR1551956A FR1551956DA FR1551956A FR 1551956 A FR1551956 A FR 1551956A FR 1551956D A FR1551956D A FR 1551956DA FR 1551956 A FR1551956 A FR 1551956A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1551956A publication Critical patent/FR1551956A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
FR1551956D 1966-09-23 1967-09-22 Expired FR1551956A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58158066A 1966-09-23 1966-09-23

Publications (1)

Publication Number Publication Date
FR1551956A true FR1551956A (fr) 1969-01-03

Family

ID=24325740

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1551956D Expired FR1551956A (fr) 1966-09-23 1967-09-22

Country Status (5)

Country Link
US (1) US3469155A (fr)
BE (1) BE703937A (fr)
DE (1) DE1639052A1 (fr)
FR (1) FR1551956A (fr)
GB (1) GB1166568A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2005929A1 (fr) * 1968-04-10 1969-12-19 Rca Corp Transistor a effet de champ et a porte isolee protege contre les surtensions
DE2009431A1 (de) * 1969-03-01 1970-09-17 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Feldeffekttransistor mit isolierter Torelektrode
EP0102647A2 (fr) * 1982-09-07 1984-03-14 Kabushiki Kaisha Toshiba Dispositif de protection d'entrée pour dispositif CMOS
EP0140095A1 (fr) * 1983-09-21 1985-05-08 Siemens Aktiengesellschaft Diode semi-conductrice
EP0385450A2 (fr) * 1989-02-28 1990-09-05 Kabushiki Kaisha Toshiba Dispositif semi-conducteur comprenant un condensateur de type MIS

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882529A (en) * 1967-10-06 1975-05-06 Texas Instruments Inc Punch-through semiconductor diodes
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
US3638197A (en) * 1968-12-31 1972-01-25 Texas Instruments Inc Electronic printing input-output station
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
JPS5115394B1 (fr) * 1969-11-20 1976-05-17
JPS5113010Y1 (fr) * 1969-12-01 1976-04-07
JPS5122794B1 (fr) * 1970-06-24 1976-07-12
US3694704A (en) * 1970-09-28 1972-09-26 Sony Corp Semiconductor device
US3983023A (en) * 1971-03-30 1976-09-28 Ibm Corporation Integrated semiconductor circuit master-slice structure in which the insulation layer beneath unused contact terminals is free of short-circuits
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors
DE2658304C2 (de) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
US7439592B2 (en) * 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications
CN100459118C (zh) * 2004-12-13 2009-02-04 美国博通公司 高压设备中的静电放电保护
US20060220168A1 (en) * 2005-03-08 2006-10-05 Monolithic Power Systems, Inc. Shielding high voltage integrated circuits

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3230429A (en) * 1962-01-09 1966-01-18 Westinghouse Electric Corp Integrated transistor, diode and resistance semiconductor network
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3272989A (en) * 1963-12-17 1966-09-13 Rca Corp Integrated electrical circuit
US3289093A (en) * 1964-02-20 1966-11-29 Fairchild Camera Instr Co A. c. amplifier using enhancement-mode field effect devices
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2005929A1 (fr) * 1968-04-10 1969-12-19 Rca Corp Transistor a effet de champ et a porte isolee protege contre les surtensions
DE2009431A1 (de) * 1969-03-01 1970-09-17 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Feldeffekttransistor mit isolierter Torelektrode
FR2034595A1 (fr) * 1969-03-01 1970-12-11 Philips Nv
EP0102647A2 (fr) * 1982-09-07 1984-03-14 Kabushiki Kaisha Toshiba Dispositif de protection d'entrée pour dispositif CMOS
EP0102647A3 (en) * 1982-09-07 1985-05-15 Kabushiki Kaisha Toshiba Input protection device for c-mos device
US4872045A (en) * 1982-09-07 1989-10-03 Tokyo Shibaura Denki Kabushiki Kaisha Input protection device for C-MOS device
EP0140095A1 (fr) * 1983-09-21 1985-05-08 Siemens Aktiengesellschaft Diode semi-conductrice
EP0385450A2 (fr) * 1989-02-28 1990-09-05 Kabushiki Kaisha Toshiba Dispositif semi-conducteur comprenant un condensateur de type MIS
EP0385450A3 (fr) * 1989-02-28 1991-07-17 Kabushiki Kaisha Toshiba Dispositif semi-conducteur comprenant un condensateur de type MIS

Also Published As

Publication number Publication date
US3469155A (en) 1969-09-23
BE703937A (fr) 1968-02-01
GB1166568A (en) 1969-10-08
DE1639052A1 (de) 1969-10-02

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Legal Events

Date Code Title Description
ST Notification of lapse