NL163676B - Veldeffecttransistor. - Google Patents

Veldeffecttransistor.

Info

Publication number
NL163676B
NL163676B NL6905455.A NL6905455A NL163676B NL 163676 B NL163676 B NL 163676B NL 6905455 A NL6905455 A NL 6905455A NL 163676 B NL163676 B NL 163676B
Authority
NL
Netherlands
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
NL6905455.A
Other languages
English (en)
Other versions
NL163676C (nl
NL6905455A (nl
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL6905455A publication Critical patent/NL6905455A/xx
Publication of NL163676B publication Critical patent/NL163676B/nl
Application granted granted Critical
Publication of NL163676C publication Critical patent/NL163676C/nl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL6905455.A 1968-04-10 1969-04-09 Veldeffecttransistor. NL163676C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72012868A 1968-04-10 1968-04-10

Publications (3)

Publication Number Publication Date
NL6905455A NL6905455A (nl) 1969-10-14
NL163676B true NL163676B (nl) 1980-04-15
NL163676C NL163676C (nl) 1980-09-15

Family

ID=24892770

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6905455.A NL163676C (nl) 1968-04-10 1969-04-09 Veldeffecttransistor.

Country Status (7)

Country Link
US (1) US3512058A (nl)
JP (1) JPS549030B1 (nl)
DE (1) DE1918222C3 (nl)
FR (1) FR2005929A1 (nl)
GB (1) GB1197154A (nl)
MY (1) MY7300388A (nl)
NL (1) NL163676C (nl)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.
US3631312A (en) * 1969-05-15 1971-12-28 Nat Semiconductor Corp High-voltage mos transistor method and apparatus
US3601625A (en) * 1969-06-25 1971-08-24 Texas Instruments Inc Mosic with protection against voltage surges
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
JPS4836598B1 (nl) * 1969-09-05 1973-11-06
JPS5115394B1 (nl) * 1969-11-20 1976-05-17
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
JPS5122794B1 (nl) * 1970-06-24 1976-07-12
US3740620A (en) * 1971-06-22 1973-06-19 Ibm Storage system having heterojunction-homojunction devices
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
DE2511488A1 (de) * 1975-03-15 1976-09-23 Bosch Gmbh Robert Cmos-inverter
JPS5422781A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Insulator gate protective semiconductor device
US4264857A (en) * 1978-06-30 1981-04-28 International Business Machines Corporation Constant voltage threshold device
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
US4543597A (en) * 1982-06-30 1985-09-24 Tokyo Shibaura Denki Kabushiki Kaisha Dynamic semiconductor memory and manufacturing method thereof
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
US4725915A (en) * 1984-03-31 1988-02-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US4763184A (en) * 1985-04-30 1988-08-09 Waferscale Integration, Inc. Input circuit for protecting against damage caused by electrostatic discharge
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
IT1188398B (it) * 1986-02-18 1988-01-07 Sgs Microelettronica Spa Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa
IT1226438B (it) * 1988-07-05 1991-01-15 Sgs Thomson Microelectronics Circuito elettronico con dispositivo di protezione da variazioni di tensione della batteria di alimentazione.
JP3318774B2 (ja) * 1992-06-29 2002-08-26 ソニー株式会社 半導体装置および固体撮像装置
JP3456242B2 (ja) * 1993-01-07 2003-10-14 セイコーエプソン株式会社 半導体装置及びその製造方法
DE102005045178B3 (de) 2005-09-21 2006-10-12 Miele & Cie. Kg Kunststofflaugenbehälter für eine Waschmaschine und Verfahren zur Herstellung eines Kunststofflaugenbehälters

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278853A (en) * 1963-11-21 1966-10-11 Westinghouse Electric Corp Integrated circuits with field effect transistors and diode bias means
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
FR1484322A (fr) * 1965-06-22 1967-06-09 Philips Nv Composant semi-conducteur complexe
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown

Also Published As

Publication number Publication date
NL163676C (nl) 1980-09-15
MY7300388A (en) 1973-12-31
FR2005929A1 (fr) 1969-12-19
NL6905455A (nl) 1969-10-14
DE1918222B2 (de) 1981-06-19
JPS549030B1 (nl) 1979-04-20
GB1197154A (en) 1970-07-01
DE1918222C3 (de) 1982-03-04
US3512058A (en) 1970-05-12
DE1918222A1 (de) 1970-02-05
FR2005929B1 (nl) 1974-09-20

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee