FR2296265A1 - Dispositif semi-conducteur en technologie integree a injection - Google Patents

Dispositif semi-conducteur en technologie integree a injection

Info

Publication number
FR2296265A1
FR2296265A1 FR7539999A FR7539999A FR2296265A1 FR 2296265 A1 FR2296265 A1 FR 2296265A1 FR 7539999 A FR7539999 A FR 7539999A FR 7539999 A FR7539999 A FR 7539999A FR 2296265 A1 FR2296265 A1 FR 2296265A1
Authority
FR
France
Prior art keywords
semiconductor
semiconductor device
regions
conductivity
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539999A
Other languages
English (en)
French (fr)
Other versions
FR2296265B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2296265A1 publication Critical patent/FR2296265A1/fr
Application granted granted Critical
Publication of FR2296265B1 publication Critical patent/FR2296265B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7539999A 1974-12-27 1975-12-29 Dispositif semi-conducteur en technologie integree a injection Granted FR2296265A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP751909A JPS5536187B2 (enrdf_load_stackoverflow) 1974-12-27 1974-12-27

Publications (2)

Publication Number Publication Date
FR2296265A1 true FR2296265A1 (fr) 1976-07-23
FR2296265B1 FR2296265B1 (enrdf_load_stackoverflow) 1980-06-27

Family

ID=11514695

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539999A Granted FR2296265A1 (fr) 1974-12-27 1975-12-29 Dispositif semi-conducteur en technologie integree a injection

Country Status (3)

Country Link
JP (1) JPS5536187B2 (enrdf_load_stackoverflow)
DE (1) DE2559001C2 (enrdf_load_stackoverflow)
FR (1) FR2296265A1 (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513583B2 (enrdf_load_stackoverflow) * 1974-11-14 1980-04-10

Also Published As

Publication number Publication date
JPS5182581A (enrdf_load_stackoverflow) 1976-07-20
FR2296265B1 (enrdf_load_stackoverflow) 1980-06-27
JPS5536187B2 (enrdf_load_stackoverflow) 1980-09-19
DE2559001C2 (de) 1984-11-29
DE2559001A1 (de) 1976-11-18

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse