FR2296265A1 - Injection integrated logic semiconductor device - has layers and regions to constitute lateral PNP and vertical NPN transistors - Google Patents

Injection integrated logic semiconductor device - has layers and regions to constitute lateral PNP and vertical NPN transistors

Info

Publication number
FR2296265A1
FR2296265A1 FR7539999A FR7539999A FR2296265A1 FR 2296265 A1 FR2296265 A1 FR 2296265A1 FR 7539999 A FR7539999 A FR 7539999A FR 7539999 A FR7539999 A FR 7539999A FR 2296265 A1 FR2296265 A1 FR 2296265A1
Authority
FR
France
Prior art keywords
regions
semiconductor device
integrated logic
layers
lateral pnp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539999A
Other languages
French (fr)
Other versions
FR2296265B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2296265A1 publication Critical patent/FR2296265A1/en
Application granted granted Critical
Publication of FR2296265B1 publication Critical patent/FR2296265B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

An injection integrated logic semiconductor device or I2L device has advantages over other devices. These advantages are structural simplicity, production efficiency, high integration and low power-propagation time. It has a substrate layer (1) of semiconductor with a first type of conductivity and another layer (2) of semiconductor with a conductivity opposite to the substrate layer (1). There are also regions of the two types of conductivity formed in the second layer (2) of semiconductor. The regions formed and connected to two terminals (I, E) constitute a lateral PNP transistor and the regions connected to two terminals (I, O) constitute a vertical NPN transistor.
FR7539999A 1974-12-27 1975-12-29 Injection integrated logic semiconductor device - has layers and regions to constitute lateral PNP and vertical NPN transistors Granted FR2296265A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP751909A JPS5536187B2 (en) 1974-12-27 1974-12-27

Publications (2)

Publication Number Publication Date
FR2296265A1 true FR2296265A1 (en) 1976-07-23
FR2296265B1 FR2296265B1 (en) 1980-06-27

Family

ID=11514695

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539999A Granted FR2296265A1 (en) 1974-12-27 1975-12-29 Injection integrated logic semiconductor device - has layers and regions to constitute lateral PNP and vertical NPN transistors

Country Status (3)

Country Link
JP (1) JPS5536187B2 (en)
DE (1) DE2559001C2 (en)
FR (1) FR2296265A1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513583B2 (en) * 1974-11-14 1980-04-10

Also Published As

Publication number Publication date
DE2559001C2 (en) 1984-11-29
DE2559001A1 (en) 1976-11-18
JPS5536187B2 (en) 1980-09-19
JPS5182581A (en) 1976-07-20
FR2296265B1 (en) 1980-06-27

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Legal Events

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CD Change of name or company name
ST Notification of lapse