FR2296265A1 - Injection integrated logic semiconductor device - has layers and regions to constitute lateral PNP and vertical NPN transistors - Google Patents
Injection integrated logic semiconductor device - has layers and regions to constitute lateral PNP and vertical NPN transistorsInfo
- Publication number
- FR2296265A1 FR2296265A1 FR7539999A FR7539999A FR2296265A1 FR 2296265 A1 FR2296265 A1 FR 2296265A1 FR 7539999 A FR7539999 A FR 7539999A FR 7539999 A FR7539999 A FR 7539999A FR 2296265 A1 FR2296265 A1 FR 2296265A1
- Authority
- FR
- France
- Prior art keywords
- regions
- semiconductor device
- integrated logic
- layers
- lateral pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000002347 injection Methods 0.000 title abstract 2
- 239000007924 injection Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
An injection integrated logic semiconductor device or I2L device has advantages over other devices. These advantages are structural simplicity, production efficiency, high integration and low power-propagation time. It has a substrate layer (1) of semiconductor with a first type of conductivity and another layer (2) of semiconductor with a conductivity opposite to the substrate layer (1). There are also regions of the two types of conductivity formed in the second layer (2) of semiconductor. The regions formed and connected to two terminals (I, E) constitute a lateral PNP transistor and the regions connected to two terminals (I, O) constitute a vertical NPN transistor.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP751909A JPS5536187B2 (en) | 1974-12-27 | 1974-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2296265A1 true FR2296265A1 (en) | 1976-07-23 |
FR2296265B1 FR2296265B1 (en) | 1980-06-27 |
Family
ID=11514695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7539999A Granted FR2296265A1 (en) | 1974-12-27 | 1975-12-29 | Injection integrated logic semiconductor device - has layers and regions to constitute lateral PNP and vertical NPN transistors |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5536187B2 (en) |
DE (1) | DE2559001C2 (en) |
FR (1) | FR2296265A1 (en) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5513583B2 (en) * | 1974-11-14 | 1980-04-10 |
-
1974
- 1974-12-27 JP JP751909A patent/JPS5536187B2/ja not_active Expired
-
1975
- 1975-12-29 DE DE19752559001 patent/DE2559001C2/en not_active Expired
- 1975-12-29 FR FR7539999A patent/FR2296265A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5182581A (en) | 1976-07-20 |
FR2296265B1 (en) | 1980-06-27 |
JPS5536187B2 (en) | 1980-09-19 |
DE2559001C2 (en) | 1984-11-29 |
DE2559001A1 (en) | 1976-11-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |