FR2295646A1 - Circuits numeriques en technologie mos complementaire (cmos) munis d'un amplificateur a boucle de reaction - Google Patents

Circuits numeriques en technologie mos complementaire (cmos) munis d'un amplificateur a boucle de reaction

Info

Publication number
FR2295646A1
FR2295646A1 FR7533886A FR7533886A FR2295646A1 FR 2295646 A1 FR2295646 A1 FR 2295646A1 FR 7533886 A FR7533886 A FR 7533886A FR 7533886 A FR7533886 A FR 7533886A FR 2295646 A1 FR2295646 A1 FR 2295646A1
Authority
FR
France
Prior art keywords
cmos
digital circuits
complementary mos
mos technology
loop amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7533886A
Other languages
English (en)
Other versions
FR2295646B1 (fr
Inventor
Frederick Buckley Iii
Malcolm K Creamer Jr
Gerald A Miller
Vincent A Scotto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2295646A1 publication Critical patent/FR2295646A1/fr
Application granted granted Critical
Publication of FR2295646B1 publication Critical patent/FR2295646B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
  • Static Random-Access Memory (AREA)
FR7533886A 1974-12-20 1975-10-31 Circuits numeriques en technologie mos complementaire (cmos) munis d'un amplificateur a boucle de reaction Granted FR2295646A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/534,945 US3986043A (en) 1974-12-20 1974-12-20 CMOS digital circuits with active shunt feedback amplifier
US05/534,950 US3986041A (en) 1974-12-20 1974-12-20 CMOS digital circuits with resistive shunt feedback amplifier

Publications (2)

Publication Number Publication Date
FR2295646A1 true FR2295646A1 (fr) 1976-07-16
FR2295646B1 FR2295646B1 (fr) 1978-05-12

Family

ID=27064651

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7533886A Granted FR2295646A1 (fr) 1974-12-20 1975-10-31 Circuits numeriques en technologie mos complementaire (cmos) munis d'un amplificateur a boucle de reaction

Country Status (6)

Country Link
US (4) US3986041A (fr)
JP (1) JPS5320371B2 (fr)
CA (1) CA1047608A (fr)
DE (1) DE2555297C2 (fr)
FR (1) FR2295646A1 (fr)
GB (1) GB1528936A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2365263A1 (fr) * 1976-09-16 1978-04-14 Labo Cent Telecommunicat Perfectionnements aux etages de commutation electroniques

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JPS54158138A (en) * 1978-06-05 1979-12-13 Nippon Precision Circuits Comparator
US4445051A (en) * 1981-06-26 1984-04-24 Burroughs Corporation Field effect current mode logic gate
JPS58101525A (ja) * 1981-12-14 1983-06-16 Fujitsu Ltd 論理回路
US4414480A (en) * 1981-12-17 1983-11-08 Storage Technology Partners CMOS Circuit using transmission line interconnections
US4468574A (en) * 1982-05-03 1984-08-28 General Electric Company Dual gate CMOS transistor circuits having reduced electrode capacitance
JPS58197920A (ja) * 1982-05-13 1983-11-17 Toshiba Corp 論理回路
EP0101896B1 (fr) * 1982-07-30 1988-05-18 Kabushiki Kaisha Toshiba Circuit logique MOS
JPH0648595B2 (ja) * 1982-08-20 1994-06-22 株式会社東芝 半導体記憶装置のセンスアンプ
WO1984002620A1 (fr) * 1982-12-27 1984-07-05 Storage Technology Partners Circuit cmos utilisant des interconnexions de lignes de transmission
JPS59140725A (ja) * 1983-01-31 1984-08-13 Nec Corp 論理回路
US4602170A (en) * 1983-09-08 1986-07-22 International Business Machines Corporation Resistive gate field effect transistor logic family
JPS60198922A (ja) * 1984-03-21 1985-10-08 Sharp Corp Ｍｏｓｆｅｔ回路
US4634890A (en) * 1984-09-06 1987-01-06 Thomson Components-Mostek Corporation Clamping circuit finding particular application between a single sided output of a computer memory and a differential amplifier sensing circuit
NL8501816A (nl) * 1985-06-24 1987-01-16 Johan Dirk Spek Elektronisch ketenonderdeel met veldeffecttransistorwerking, toepassingen van dit ketenonderdeel, en vervangingsketen voor een dergelijk onderdeel.
JPS62228177A (ja) * 1986-03-29 1987-10-07 Toshiba Corp 半導体集積回路用許容入力電圧検査回路
US4682054A (en) * 1986-06-27 1987-07-21 Motorola, Inc. BICMOS driver with output voltage swing enhancement
US4769564A (en) * 1987-05-15 1988-09-06 Analog Devices, Inc. Sense amplifier
US4812688A (en) * 1987-12-30 1989-03-14 International Business Machines Corporation Transistor delay circuits
US4924116A (en) * 1988-01-19 1990-05-08 Honeywell Inc. Feedback source coupled FET logic
US4937476A (en) * 1988-06-16 1990-06-26 Intel Corporation Self-biased, high-gain differential amplifier with feedback
US4902913A (en) * 1988-07-01 1990-02-20 American Telephone And Telegraph Company Analog comparator
ATE98076T1 (de) * 1988-08-08 1993-12-15 Siemens Ag Breitbandsignal-koppeleinrichtung.
US5051625B1 (en) * 1988-10-28 1993-11-16 Nissan Motor Co.,Ltd. Output buffer circuits for reducing noise
US5030856A (en) * 1989-05-04 1991-07-09 International Business Machines Corporation Receiver and level converter circuit with dual feedback
US4958132A (en) * 1989-05-09 1990-09-18 Advanced Micro Devices, Inc. Complementary metal-oxide-semiconductor translator
US5070259A (en) * 1989-12-26 1991-12-03 Linear Technology Corporation Constant current, highspeed, auto-zeroed, CMOS comparator
US4998028A (en) * 1990-01-26 1991-03-05 International Business Machines Corp. High speed CMOS logic device for providing ECL compatible logic levels
US5025181A (en) * 1990-08-31 1991-06-18 Advanced Micro Devices, Inc. Apparatus for generating digital gating signals in response to a digital data signal
US5025182A (en) * 1990-08-31 1991-06-18 Advanced Micro Devices, Inc. Digital apparatus for generating gating signals in response to a data signal
JP2848500B2 (ja) * 1991-04-04 1999-01-20 三菱電機株式会社 インタフェースシステム
US5444719A (en) * 1993-01-26 1995-08-22 International Business Machines Corporation Adjustable error-correction composite Reed-Solomon encoder/syndrome generator
JP2611725B2 (ja) * 1993-09-13 1997-05-21 日本電気株式会社 カスコード回路
US5714904A (en) * 1994-06-06 1998-02-03 Sun Microsystems, Inc. High speed serial link for fully duplexed data communication
JP3424990B2 (ja) * 1994-10-14 2003-07-07 三菱電機株式会社 位相比較器
EP0984557B1 (fr) * 1996-01-16 2006-06-14 Telefonaktiebolaget LM Ericsson (publ) Circuit tampon de sortie
AU1378797A (en) 1996-01-16 1997-08-11 Telefonaktiebolaget Lm Ericsson (Publ) Output buffer switching circuit
JP3202601B2 (ja) * 1996-07-01 2001-08-27 日本電気株式会社 論理回路及び半導体集積回路配列
JP3190843B2 (ja) * 1996-12-09 2001-07-23 日本電気株式会社 プログラム可能なバッファ回路
US6130559A (en) * 1997-04-04 2000-10-10 Board Of Regents Of The University Of Texas System QMOS digital logic circuits
US5977800A (en) * 1997-10-20 1999-11-02 Vlsi Technology, Inc. Differential MOS current-mode logic circuit having high gain and fast speed
US6046638A (en) * 1998-03-04 2000-04-04 Nortel Networks Corporation Receive amplifier for reception of high-speed data signals
GB2351195A (en) 1999-06-10 2000-12-20 Ericsson Telefon Ab L M An MOS voltage to current converter with current to voltage output stage and MOS feedback
JP3826749B2 (ja) * 2001-08-22 2006-09-27 株式会社日立製作所 シャント抵抗を備えた電力変換装置
US6943596B2 (en) * 2002-03-12 2005-09-13 Broadcom Corporation Power-on reset circuit for use in low power supply voltage applications
US7227411B2 (en) * 2003-06-17 2007-06-05 Broadcom Corporation Apparatus for a differential self-biasing CMOS amplifier
US7034619B2 (en) * 2003-09-17 2006-04-25 Raytheon Company Monolithic array amplifier with periodic bias-line bypassing structure and method
US6930550B1 (en) 2004-04-26 2005-08-16 Pericom Semiconductor Corp. Self-biasing differential buffer with transmission-gate bias generator
US8410813B2 (en) * 2011-05-24 2013-04-02 Integrated Device Technology, Inc. Method and apparatus for a low power AC On-Die-Termination (ODT) circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500062A (en) * 1967-05-10 1970-03-10 Rca Corp Digital logic apparatus
US3668430A (en) * 1971-07-12 1972-06-06 Signetics Corp High speed logic circuit with low effective miller capacitance
US3739193A (en) * 1971-01-11 1973-06-12 Rca Corp Logic circuit
US3742250A (en) * 1971-04-07 1973-06-26 Signetics Corp Active region logic circuit

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US3033995A (en) * 1960-08-31 1962-05-08 Rca Corp Circuit for producing an output voltage indicative of the absolute valve of the difference between two input voltages
US3252011A (en) * 1964-03-16 1966-05-17 Rca Corp Logic circuit employing transistor means whereby steady state power dissipation is minimized
US3413488A (en) * 1965-04-14 1968-11-26 Navy Usa Complementary coincidence detector for producing a given output signal only when all input signals have the same binary value
US3392341A (en) * 1965-09-10 1968-07-09 Rca Corp Self-biased field effect transistor amplifier
US3497715A (en) * 1967-06-09 1970-02-24 Ncr Co Three-phase metal-oxide-semiconductor logic circuit
US3737673A (en) * 1970-04-27 1973-06-05 Tokyo Shibaura Electric Co Logic circuit using complementary type insulated gate field effect transistors
DE2034630C3 (de) * 1970-07-13 1975-09-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schaltglied für digitale Signalverarbeitung
US3621291A (en) * 1970-09-08 1971-11-16 North American Rockwell Nodable field-effect transistor driver and receiver circuit
US3676702A (en) * 1971-01-04 1972-07-11 Rca Corp Comparator circuit
CA979080A (en) * 1972-08-30 1975-12-02 Tokyo Shibaura Electric Co. Logic circuit arrangement using insulated gate field effect transistors
JPS49123259A (fr) * 1973-03-28 1974-11-26
US3870966A (en) * 1973-06-01 1975-03-11 Rca Corp Complementary field effect transistor differential amplifier
US3886464A (en) * 1973-06-01 1975-05-27 Rca Corp Self-biased complementary transistor amplifier
US3855549A (en) * 1973-08-24 1974-12-17 Rca Corp Circuit, such as cmos crystal oscillator, with reduced power consumption
US3943380A (en) * 1974-07-26 1976-03-09 Rca Corporation Keyed comparator
US3904988A (en) * 1974-09-11 1975-09-09 Motorola Inc CMOS voltage controlled oscillator
US3956708A (en) * 1974-09-11 1976-05-11 Motorola, Inc. MOSFET comparator
US3956643A (en) * 1974-09-12 1976-05-11 Texas Instruments Incorporated MOS analog multiplier

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US3500062A (en) * 1967-05-10 1970-03-10 Rca Corp Digital logic apparatus
US3739193A (en) * 1971-01-11 1973-06-12 Rca Corp Logic circuit
US3742250A (en) * 1971-04-07 1973-06-26 Signetics Corp Active region logic circuit
US3668430A (en) * 1971-07-12 1972-06-06 Signetics Corp High speed logic circuit with low effective miller capacitance

Non-Patent Citations (5)

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Title
(REVUE US IEEE TRANSACTIONS ON COMPUTERS, VOL. C-20, NO. 6, JUIN 1971, PAGES 698-706 ARTICLE "GATE-INTERCONNECTION MINIMIZATION OF SWITCHING NETWORKS USING NEGATIVE GATES" THOSHIHIDE IBARAKI *
*REVUE DT FUNKSCHAU, VOL. 46, NO. 11, 24 MAI 1974, PAGES 405-406. ARTICLE: "KOMPLEMENTARE MOS-TECHNIK WIRD DYNAMISCH AKTIVER" *
*REVUE FR INTER ELECTRONIQUE, NO. 126, 4 MARS 1974, PAGES 28-30. ARTICLE "AVEC SA SERIE 34 000, FAIRCHILD MAITRISE LA REPONSE DES C-MOS" DELLA MUSSIA *
REVUE US ELECTRICAL DESIGN NEWS, EDN-VOL. 17, NO. 12, 15 JUIN1972, PAGES 28-36. ARTICLE: CMOS FINALLY GETS IT ALL TOGETHER" CUSHMAN ) *
REVUE US IBM-TECHNICAL DISCLOSURE BULLETIN, VOL. 13, NO. 9, FEVRIER 1971, PAGE 2822 ARTICLE "FIELD-EFFECT TRANSISTOR DETECTOR AMPLIFIER CELL" HESSION ET KLEPP ) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2365263A1 (fr) * 1976-09-16 1978-04-14 Labo Cent Telecommunicat Perfectionnements aux etages de commutation electroniques

Also Published As

Publication number Publication date
CA1047608A (fr) 1979-01-30
JPS5178163A (fr) 1976-07-07
JPS5320371B2 (fr) 1978-06-26
DE2555297A1 (de) 1976-07-01
GB1528936A (en) 1978-10-18
US4074151A (en) 1978-02-14
US3986043A (en) 1976-10-12
FR2295646B1 (fr) 1978-05-12
US3986041A (en) 1976-10-12
DE2555297C2 (de) 1983-02-24
US4074150A (en) 1978-02-14

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Legal Events

Date Code Title Description
ST Notification of lapse