FR2290000A1 - Memoire a acces aleatoire a semi-conducteur - Google Patents
Memoire a acces aleatoire a semi-conducteurInfo
- Publication number
- FR2290000A1 FR2290000A1 FR7533398A FR7533398A FR2290000A1 FR 2290000 A1 FR2290000 A1 FR 2290000A1 FR 7533398 A FR7533398 A FR 7533398A FR 7533398 A FR7533398 A FR 7533398A FR 2290000 A1 FR2290000 A1 FR 2290000A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor
- memory
- random access
- random
- access
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/520,797 US3959781A (en) | 1974-11-04 | 1974-11-04 | Semiconductor random access memory |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2290000A1 true FR2290000A1 (fr) | 1976-05-28 |
FR2290000B3 FR2290000B3 (fr) | 1977-11-18 |
Family
ID=24074109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7533398A Granted FR2290000A1 (fr) | 1974-11-04 | 1975-10-31 | Memoire a acces aleatoire a semi-conducteur |
Country Status (4)
Country | Link |
---|---|
US (1) | US3959781A (fr) |
JP (1) | JPS5165841A (fr) |
DE (1) | DE2548564A1 (fr) |
FR (1) | FR2290000A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2346773A1 (fr) * | 1976-03-30 | 1977-10-28 | Honeywell Inf Systems | Echantillonnage de puissance pour la realisation d'un triple-etat |
FR2346774A1 (fr) * | 1976-03-31 | 1977-10-28 | Honeywell Inf Systems | Interface de memoire de calculateur |
FR2365246A1 (fr) * | 1976-09-16 | 1978-04-14 | Siemens Ag | Decodeur comportant des transistors mos |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2258783B1 (fr) * | 1974-01-25 | 1977-09-16 | Valentin Camille | |
JPS51130154A (en) * | 1975-05-07 | 1976-11-12 | Nec Corp | Flip-flop circuit |
JPS51139247A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Mos logic circuit |
US4195238A (en) * | 1975-06-04 | 1980-03-25 | Hitachi, Ltd. | Address buffer circuit in semiconductor memory |
JPS51142925A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Address buffer circuit |
JPS526044A (en) * | 1975-07-04 | 1977-01-18 | Toko Inc | Dynamic decoder circuit |
DE2634089C3 (de) * | 1975-08-11 | 1988-09-08 | Nippon Telegraph And Telephone Corp., Tokio/Tokyo | Schaltungsanordnung zum Erfassen schwacher Signale |
DE2639555C2 (de) * | 1975-09-04 | 1985-07-04 | Plessey Overseas Ltd., Ilford, Essex | Elektrische integrierte Schaltung |
JPS5268334A (en) * | 1975-12-05 | 1977-06-07 | Toshiba Corp | Semiconductor memory |
US4006469A (en) * | 1975-12-16 | 1977-02-01 | International Business Machines Corporation | Data storage cell with transistors operating at different threshold voltages |
US4096402A (en) * | 1975-12-29 | 1978-06-20 | Mostek Corporation | MOSFET buffer for TTL logic input and method of operation |
US4075606A (en) * | 1976-02-13 | 1978-02-21 | E-Systems, Inc. | Self-memorizing data bus system for random access data transfer |
US4038646A (en) * | 1976-03-12 | 1977-07-26 | Intel Corporation | Dynamic mos ram |
US4038567A (en) * | 1976-03-22 | 1977-07-26 | International Business Machines Corporation | Memory input signal buffer circuit |
JPS52119160A (en) * | 1976-03-31 | 1977-10-06 | Nec Corp | Semiconductor circuit with insulating gate type field dffect transisto r |
DE2623219B2 (de) * | 1976-05-24 | 1978-10-12 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Betreiben einer Leseverstärkerschaltung für einen dynamischen MOS-Speicher und Anordnung zur Durchführung dieses Verfahrens |
US4110639A (en) * | 1976-12-09 | 1978-08-29 | Texas Instruments Incorporated | Address buffer circuit for high speed semiconductor memory |
US4077031A (en) * | 1976-08-23 | 1978-02-28 | Texas Instruments Incorporated | High speed address buffer for semiconductor memory |
DE2724646A1 (de) | 1976-06-01 | 1977-12-15 | Texas Instruments Inc | Halbleiterspeicheranordnung |
DE2760462C2 (de) * | 1976-06-01 | 1994-06-30 | Texas Instruments Inc | Halbleiterspeicheranordnung |
SU928405A1 (ru) * | 1976-08-05 | 1982-05-15 | Предприятие П/Я Р-6429 | Усилитель считывани дл интегрального запоминающего устройства |
JPS6012717B2 (ja) * | 1976-09-10 | 1985-04-03 | 日本電気株式会社 | 絶縁ゲ−ト型電界効果トランジスタを用いた半導体回路 |
US4081699A (en) * | 1976-09-14 | 1978-03-28 | Mos Technology, Inc. | Depletion mode coupling device for a memory line driving circuit |
US4094012A (en) * | 1976-10-01 | 1978-06-06 | Intel Corporation | Electrically programmable MOS read-only memory with isolated decoders |
JPS5938670B2 (ja) * | 1976-10-15 | 1984-09-18 | 日本電気株式会社 | 差信号増巾回路 |
US4508980A (en) * | 1976-11-11 | 1985-04-02 | Signetics Corporation | Sense and refresh amplifier circuit |
US4129793A (en) * | 1977-06-16 | 1978-12-12 | International Business Machines Corporation | High speed true/complement driver |
US4149268A (en) * | 1977-08-09 | 1979-04-10 | Harris Corporation | Dual function memory |
DE2738187C2 (de) * | 1977-08-24 | 1979-02-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Schaltungsanordnung für mehrere auf einem Bipolar-Baustein angeordnete Speicherzellen mit einer Regelschaltung zur Kennlinien-Anpassung der Speicherzellen |
US4146802A (en) * | 1977-09-19 | 1979-03-27 | Motorola, Inc. | Self latching buffer |
US4216395A (en) * | 1978-01-16 | 1980-08-05 | Bell Telephone Laboratories, Incorporated | Detector circuitry |
US4169233A (en) * | 1978-02-24 | 1979-09-25 | Rockwell International Corporation | High performance CMOS sense amplifier |
US4328558A (en) * | 1978-03-09 | 1982-05-04 | Motorola, Inc. | RAM Address enable circuit for a microprocessor having an on-chip RAM |
EP0005601B1 (fr) * | 1978-05-11 | 1983-03-02 | Nippon Telegraph and Telephone Public Corporation | Circuit semiconducteur intégré à mémoire |
JPS5826179B2 (ja) * | 1978-06-14 | 1983-06-01 | 富士通株式会社 | 半導体集積回路装置 |
DE2964801D1 (en) * | 1978-06-30 | 1983-03-24 | Fujitsu Ltd | Semiconductor integrated circuit device |
US4216389A (en) * | 1978-09-25 | 1980-08-05 | Motorola, Inc. | Bus driver/latch with second stage stack input |
US4255679A (en) * | 1978-10-30 | 1981-03-10 | Texas Instruments Incorporated | Depletion load dynamic sense amplifier for MOS random access memory |
US4228528B2 (en) * | 1979-02-09 | 1992-10-06 | Memory with redundant rows and columns | |
US4337525A (en) * | 1979-04-17 | 1982-06-29 | Nippon Electric Co., Ltd. | Asynchronous circuit responsive to changes in logic level |
US4333020A (en) * | 1979-05-23 | 1982-06-01 | Motorola, Inc. | MOS Latch circuit |
JPS5842556B2 (ja) * | 1979-08-30 | 1983-09-20 | 富士通株式会社 | 半導体記憶装置 |
US4270189A (en) * | 1979-11-06 | 1981-05-26 | International Business Machines Corporation | Read only memory circuit |
JPS56101694A (en) * | 1980-01-18 | 1981-08-14 | Nec Corp | Semiconductor circuit |
US4401904A (en) * | 1980-03-24 | 1983-08-30 | Texas Instruments Incorporated | Delay circuit used in semiconductor memory device |
US4485317A (en) * | 1981-10-02 | 1984-11-27 | Fairchild Camera & Instrument Corp. | Dynamic TTL input comparator for CMOS devices |
JPS5862893A (ja) * | 1981-10-09 | 1983-04-14 | Mitsubishi Electric Corp | Mosダイナミツクメモリ |
US4433252A (en) * | 1982-01-18 | 1984-02-21 | International Business Machines Corporation | Input signal responsive pulse generating and biasing circuit for integrated circuits |
US4471240A (en) * | 1982-08-19 | 1984-09-11 | Motorola, Inc. | Power-saving decoder for memories |
DE3380678D1 (en) * | 1983-05-25 | 1989-11-09 | Ibm Deutschland | Semiconductor memory |
JPS60224329A (ja) * | 1984-04-20 | 1985-11-08 | Sharp Corp | Mos集積回路素子の入力回路 |
ATE47928T1 (de) * | 1984-05-14 | 1989-11-15 | Ibm | Halbleiterspeicher. |
US5018111A (en) * | 1988-12-27 | 1991-05-21 | Intel Corporation | Timing circuit for memory employing reset function |
US5307356A (en) * | 1990-04-16 | 1994-04-26 | International Business Machines Corporation | Interlocked on-chip ECC system |
KR930003929B1 (ko) * | 1990-08-09 | 1993-05-15 | 삼성전자 주식회사 | 데이타 출력버퍼 |
DE4228213C2 (de) * | 1991-09-19 | 1997-05-15 | Siemens Ag | Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betreiben |
EP0733976A1 (fr) * | 1995-03-23 | 1996-09-25 | Canon Kabushiki Kaisha | Générateur de signal de sélection de puces |
FR2768847B1 (fr) * | 1997-09-23 | 2001-05-18 | St Microelectronics Sa | Dispositif et procede de lecture/re-ecriture d'une cellule-memoire vive dynamique |
US6044024A (en) * | 1998-01-14 | 2000-03-28 | International Business Machines Corporation | Interactive method for self-adjusted access on embedded DRAM memory macros |
KR100299183B1 (ko) * | 1999-09-10 | 2001-11-07 | 윤종용 | 고속 파이프 라인장치 및 그 제어신호 발생방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
US3699537A (en) * | 1969-05-16 | 1972-10-17 | Shell Oil Co | Single-rail mosfet memory with capacitive storage |
-
1974
- 1974-11-04 US US05/520,797 patent/US3959781A/en not_active Expired - Lifetime
-
1975
- 1975-10-21 JP JP50125997A patent/JPS5165841A/ja active Pending
- 1975-10-30 DE DE19752548564 patent/DE2548564A1/de active Pending
- 1975-10-31 FR FR7533398A patent/FR2290000A1/fr active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2346773A1 (fr) * | 1976-03-30 | 1977-10-28 | Honeywell Inf Systems | Echantillonnage de puissance pour la realisation d'un triple-etat |
FR2346774A1 (fr) * | 1976-03-31 | 1977-10-28 | Honeywell Inf Systems | Interface de memoire de calculateur |
FR2365246A1 (fr) * | 1976-09-16 | 1978-04-14 | Siemens Ag | Decodeur comportant des transistors mos |
Also Published As
Publication number | Publication date |
---|---|
JPS5165841A (en) | 1976-06-07 |
FR2290000B3 (fr) | 1977-11-18 |
US3959781A (en) | 1976-05-25 |
DE2548564A1 (de) | 1976-05-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |