FR2280197A1 - Systeme et procede de lecture entrelacee d'une image de charges enregistree par une mosaique photoconvertisseuse - Google Patents

Systeme et procede de lecture entrelacee d'une image de charges enregistree par une mosaique photoconvertisseuse

Info

Publication number
FR2280197A1
FR2280197A1 FR7523383A FR7523383A FR2280197A1 FR 2280197 A1 FR2280197 A1 FR 2280197A1 FR 7523383 A FR7523383 A FR 7523383A FR 7523383 A FR7523383 A FR 7523383A FR 2280197 A1 FR2280197 A1 FR 2280197A1
Authority
FR
France
Prior art keywords
photoconverting
mosaic
image recorded
load image
interlaced reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7523383A
Other languages
English (en)
French (fr)
Other versions
FR2280197B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2280197A1 publication Critical patent/FR2280197A1/fr
Application granted granted Critical
Publication of FR2280197B1 publication Critical patent/FR2280197B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR7523383A 1974-07-25 1975-07-25 Systeme et procede de lecture entrelacee d'une image de charges enregistree par une mosaique photoconvertisseuse Granted FR2280197A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/491,812 US3932775A (en) 1974-07-25 1974-07-25 Interlaced readout of charge stored in a charge coupled image sensing array

Publications (2)

Publication Number Publication Date
FR2280197A1 true FR2280197A1 (fr) 1976-02-20
FR2280197B1 FR2280197B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-06-06

Family

ID=23953785

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7523383A Granted FR2280197A1 (fr) 1974-07-25 1975-07-25 Systeme et procede de lecture entrelacee d'une image de charges enregistree par une mosaique photoconvertisseuse

Country Status (8)

Country Link
US (1) US3932775A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JPS5444413B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU497072B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1042102A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2533405C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2280197A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1503820A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL185970C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2400296A1 (fr) * 1977-08-10 1979-03-09 Hitachi Ltd Dispositif de captation d'image semi-conducteur

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US3932775A (en) * 1974-07-25 1976-01-13 Rca Corporation Interlaced readout of charge stored in a charge coupled image sensing array
DE2541510A1 (de) * 1974-09-17 1976-03-25 Westinghouse Electric Corp Verarbeitungssystem fuer diskrete analogsignale
JPS5140711A (en) * 1974-10-02 1976-04-05 Nippon Electric Co 2 jigendenkatensososhi oyobi koreomochiita eizoshingono goseihoho
US4141024A (en) * 1975-09-25 1979-02-20 Sony Corporation Solid state image sensing device
US4087832A (en) * 1976-07-02 1978-05-02 International Business Machines Corporation Two-phase charge coupled device structure
US4176369A (en) * 1977-12-05 1979-11-27 Rockwell International Corporation Image sensor having improved moving target discernment capabilities
US4169273A (en) * 1978-06-26 1979-09-25 Honeywell Inc. Photodetector signal processing
JPS5518064A (en) * 1978-07-26 1980-02-07 Sony Corp Charge trsnsfer device
JPS55163960A (en) * 1979-06-08 1980-12-20 Nec Corp Electric charge transfer pickup unit
NL7904654A (nl) * 1979-06-14 1980-12-16 Philips Nv Televisie opneempaneel.
US4278999A (en) * 1979-09-12 1981-07-14 The Mead Corporation Moving image scanner
NL8000998A (nl) * 1980-02-19 1981-09-16 Philips Nv Vaste stof opneemcamera met een halfgeleidende photogevoelige trefplaat.
JPS57104377A (en) * 1980-12-19 1982-06-29 Matsushita Electric Ind Co Ltd Solid-state image pickup device
US4499496A (en) * 1981-09-17 1985-02-12 Canon Kabushiki Kaisha Solid state image sensing device
JPS58125963A (ja) * 1982-01-21 1983-07-27 Nec Corp 電荷転送撮像装置
US4727406A (en) * 1982-02-12 1988-02-23 Rockwell International Corporation Pre-multiplexed detector array
US4564766A (en) * 1982-04-20 1986-01-14 Matsushita Electric Industrial Co., Ltd. Method for driving solid state image pickup device
JPS59115678A (ja) * 1982-12-22 1984-07-04 Canon Inc 撮像装置
NL192315C (nl) * 1983-01-18 1997-05-07 Philips Electronics Nv Televisiecamera uitgevoerd met een vaste stof opneeminrichting.
US4524390A (en) * 1983-03-07 1985-06-18 Eastman Kodak Company Imaging apparatus
NL8301977A (nl) * 1983-06-03 1985-01-02 Philips Nv Ladinggekoppelde beeldopneeminrichting en geheugeninrichting met hoge bitdichtheid.
US4598321A (en) * 1983-12-19 1986-07-01 Rca Corporation CCD imagers with registers partitioned for simultaneous charge transfers in opposing directions
US4707743A (en) * 1985-02-19 1987-11-17 Canon Kabushiki Kaisha Method and apparatus for image conversion with multiple exposures for filtering
GB8517081D0 (en) * 1985-07-05 1985-08-14 Gen Electric Co Plc Image sensors
GB2177542B (en) * 1985-07-05 1989-07-12 Gen Electric Plc Charge coupled device image sensors
US4656518A (en) * 1985-12-11 1987-04-07 Rca Corporation Field-transfer CCD imagers with poly-phase image registers, operated to provide pseudo line interlace on alternate fields
US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
JPS6344759A (ja) * 1986-08-12 1988-02-25 Canon Inc 光電変換装置
US5134087A (en) * 1987-12-17 1992-07-28 Texas Instruments Incorporated Fabricating a two-phase CCD imager cell for TV interlace operation
US4995061A (en) * 1987-12-17 1991-02-19 Texas Instruments Incorporated Two-phase CCD imager cell for TV interlace operation
US4873561A (en) * 1988-04-19 1989-10-10 Wen David D High dynamic range charge-coupled device
DE3817559C1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-05-24 1989-12-07 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
JP2735223B2 (ja) * 1988-06-08 1998-04-02 日本放送協会 固体撮像装置
US4967249A (en) * 1989-03-17 1990-10-30 Loral Fairchild Corporation Gain compression photodetector array
US4958207A (en) * 1989-03-17 1990-09-18 Loral Fairchild Corporation Floating diode gain compression
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
DE69318455T2 (de) * 1992-03-18 1998-10-01 Sony Corp Festkörperbildaufnahmevorrichtung
US5569938A (en) * 1993-03-15 1996-10-29 Nikon Corporation Imaging Apparatus with light pulses
US5757427A (en) * 1993-04-23 1998-05-26 Hamamatsu Photonics K.K. Image pick-up apparatus having a charge coupled device with multiple electrodes, a buffer layer located below some of the electrodes
JPH0738077A (ja) * 1993-07-23 1995-02-07 Sony Corp 固体撮像素子の製造方法及び固体撮像装置
JP2007175294A (ja) * 2005-12-28 2007-07-12 Ge Medical Systems Global Technology Co Llc イメージセンサ及びその制御方法並びにｘ線検出器及びｘ線ｃｔ装置
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
GB2468668B (en) * 2009-03-17 2014-07-16 E2V Tech Uk Ltd CCD imaging array with extended dynamic range

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JPS57702B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-10-15 1982-01-07
CA993100A (en) * 1972-03-17 1976-07-13 Carlo H. Sequin Charge transfer imaging devices
US3826926A (en) * 1972-11-29 1974-07-30 Westinghouse Electric Corp Charge coupled device area imaging array
US3801884A (en) * 1972-12-18 1974-04-02 Bell Telephone Labor Inc Charge transfer imaging devices
US3932775A (en) * 1974-07-25 1976-01-13 Rca Corporation Interlaced readout of charge stored in a charge coupled image sensing array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2400296A1 (fr) * 1977-08-10 1979-03-09 Hitachi Ltd Dispositif de captation d'image semi-conducteur

Also Published As

Publication number Publication date
CA1042102A (en) 1978-11-07
JPS5911230B2 (ja) 1984-03-14
AU497072B2 (en) 1978-11-23
DE2533405C3 (de) 1978-06-15
FR2280197B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-06-06
GB1503820A (en) 1978-03-15
DE2533405B2 (de) 1977-11-03
JPS5444413B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-12-26
US3932775A (en) 1976-01-13
DE2533405A1 (de) 1976-02-05
NL7508834A (nl) 1976-01-27
NL185970B (nl) 1990-03-16
JPS5484920A (en) 1979-07-06
NL185970C (nl) 1990-08-16
AU8287475A (en) 1977-01-13
JPS5136820A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-03-27

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