FR2276095B1 - - Google Patents

Info

Publication number
FR2276095B1
FR2276095B1 FR7516539A FR7516539A FR2276095B1 FR 2276095 B1 FR2276095 B1 FR 2276095B1 FR 7516539 A FR7516539 A FR 7516539A FR 7516539 A FR7516539 A FR 7516539A FR 2276095 B1 FR2276095 B1 FR 2276095B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7516539A
Other versions
FR2276095A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2276095A1 publication Critical patent/FR2276095A1/fr
Application granted granted Critical
Publication of FR2276095B1 publication Critical patent/FR2276095B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7516539A 1974-06-27 1975-05-21 Procede et dispositif pour la croissance de barreaux monocristallins Granted FR2276095A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/483,511 US3953281A (en) 1974-06-27 1974-06-27 Method and system for growing monocrystalline ingots

Publications (2)

Publication Number Publication Date
FR2276095A1 FR2276095A1 (fr) 1976-01-23
FR2276095B1 true FR2276095B1 (fr) 1977-04-15

Family

ID=23920354

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7516539A Granted FR2276095A1 (fr) 1974-06-27 1975-05-21 Procede et dispositif pour la croissance de barreaux monocristallins

Country Status (6)

Country Link
US (1) US3953281A (fr)
JP (1) JPS5325717B2 (fr)
DE (1) DE2522611C2 (fr)
FR (1) FR2276095A1 (fr)
GB (1) GB1447222A (fr)
IT (1) IT1038098B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106451U (fr) * 1976-02-04 1977-08-13
US4201746A (en) * 1976-12-27 1980-05-06 Monsanto Company Apparatus for zone refining
US4045181A (en) * 1976-12-27 1977-08-30 Monsanto Company Apparatus for zone refining
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
FR2433970B1 (fr) * 1978-08-25 1981-01-30 Gnii Redkometa Dispositif pour le tirage d'un monocristal sur une amorce a partir d'un bain de fusion
US4360499A (en) * 1981-06-22 1982-11-23 Rca Corporation Bellows assembly for crystal ribbon puller
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
JPH06456Y2 (ja) * 1989-08-29 1994-01-05 信越半導体株式会社 単結晶引上装置のシール構造
JPH04260686A (ja) * 1991-02-08 1992-09-16 Shin Etsu Handotai Co Ltd 単結晶引上装置
JPH04105312U (ja) * 1991-02-20 1992-09-10 株式会社中村多喜彌商店 網目天井材用吊り具
JP3488531B2 (ja) * 1994-12-19 2004-01-19 コマツ電子金属株式会社 多結晶棒の吊り具
JP3402012B2 (ja) * 1995-04-21 2003-04-28 信越半導体株式会社 単結晶の成長方法及び装置
US5911825A (en) * 1997-09-30 1999-06-15 Seh America, Inc. Low oxygen heater
JP3694736B2 (ja) * 2001-06-12 2005-09-14 独立行政法人産業技術総合研究所 酸化亜鉛単結晶の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US396430A (en) * 1889-01-22 Helm reichel
US719466A (en) * 1902-03-08 1903-02-03 Nelson Hiss Traction apparatus.
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3650701A (en) * 1970-07-22 1972-03-21 Commissariat Energie Atomique Apparatus for growing crystalline bodies
US3679370A (en) * 1970-07-31 1972-07-25 Western Electric Co Crystal grower with expandable chamber

Also Published As

Publication number Publication date
JPS5325717B2 (fr) 1978-07-28
DE2522611A1 (de) 1976-01-15
GB1447222A (en) 1976-08-25
FR2276095A1 (fr) 1976-01-23
IT1038098B (it) 1979-11-20
US3953281A (en) 1976-04-27
JPS519083A (fr) 1976-01-24
DE2522611C2 (de) 1985-11-14

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Legal Events

Date Code Title Description
ST Notification of lapse