FR2275879A1 - Dispositif semi-conducteur a heterostructure et procede de realisation d'une couche dans ledit dispositif - Google Patents

Dispositif semi-conducteur a heterostructure et procede de realisation d'une couche dans ledit dispositif

Info

Publication number
FR2275879A1
FR2275879A1 FR7519287A FR7519287A FR2275879A1 FR 2275879 A1 FR2275879 A1 FR 2275879A1 FR 7519287 A FR7519287 A FR 7519287A FR 7519287 A FR7519287 A FR 7519287A FR 2275879 A1 FR2275879 A1 FR 2275879A1
Authority
FR
France
Prior art keywords
heterostructure
realizing
layer
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7519287A
Other languages
English (en)
Other versions
FR2275879B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2275879A1 publication Critical patent/FR2275879A1/fr
Application granted granted Critical
Publication of FR2275879B1 publication Critical patent/FR2275879B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12195—Tapering
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR7519287A 1974-06-20 1975-06-19 Dispositif semi-conducteur a heterostructure et procede de realisation d'une couche dans ledit dispositif Granted FR2275879A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/481,244 US3993963A (en) 1974-06-20 1974-06-20 Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same

Publications (2)

Publication Number Publication Date
FR2275879A1 true FR2275879A1 (fr) 1976-01-16
FR2275879B1 FR2275879B1 (fr) 1977-12-02

Family

ID=23911201

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7519287A Granted FR2275879A1 (fr) 1974-06-20 1975-06-19 Dispositif semi-conducteur a heterostructure et procede de realisation d'une couche dans ledit dispositif

Country Status (6)

Country Link
US (1) US3993963A (fr)
JP (1) JPS5816349B2 (fr)
CA (1) CA1026857A (fr)
DE (1) DE2527179A1 (fr)
FR (1) FR2275879A1 (fr)
GB (1) GB1513313A (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028146A (en) * 1975-03-11 1977-06-07 Bell Telephone Laboratories, Incorporated LPE Technique for fabricating tapered optical couplers
FR2319980A1 (fr) * 1975-07-28 1977-02-25 Radiotechnique Compelec Dispositif optoelectronique semi-conducteur reversible
US4117504A (en) * 1976-08-06 1978-09-26 Vadim Nikolaevich Maslov Heterogeneous semiconductor structure with composition gradient and method for producing same
US4124270A (en) * 1977-03-30 1978-11-07 United Technologies Corporation Monolithic, three-dimensional infrared waveguide for high power lasers
DE2757470A1 (de) * 1977-12-22 1979-07-05 Siemens Ag Verfahren zum herstellen einer halbleiteranordnung
US4269635A (en) * 1977-12-28 1981-05-26 Bell Telephone Laboratories, Incorporated Strip buried heterostructure laser
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication
CA1127282A (fr) * 1978-05-22 1982-07-06 Takashi Sugino Laser a semiconducteur et methode de fabrication
JPS5664490A (en) * 1979-10-30 1981-06-01 Matsushita Electric Ind Co Ltd Semiconductor laser element and its manufacture
US4286275A (en) * 1980-02-04 1981-08-25 International Business Machines Corporation Semiconductor device
FR2494044A1 (fr) * 1980-11-12 1982-05-14 Thomson Csf Phototransistor a heterojonction en technologie planar et procede de fabrication d'un tel phototransistor
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser
US4523316A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with non-absorbing mirror facet
US4523317A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with reduced absorption at a mirror facet
CA1267716A (fr) * 1984-02-23 1990-04-10 Frederick W. Scholl Diode luminescente a emission laterale
US4581742A (en) * 1984-04-10 1986-04-08 Rca Corporation Semiconductor laser having a non-absorbing passive region with beam guiding
DE3427056A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US4631730A (en) * 1984-09-28 1986-12-23 Bell Communications Research, Inc. Low noise injection laser structure
US4626802A (en) * 1984-12-24 1986-12-02 Motorola, Inc. GaAs FET oscillator noise reduction circuit
FR2589630B1 (fr) * 1985-07-23 1988-06-17 Deveaud Benoit Absorbant saturable a tres faibles temps de commutation
US4709371A (en) * 1985-10-18 1987-11-24 West Fred D Variable wavelength laser diode
JPH01186688A (ja) * 1987-09-02 1989-07-26 Sharp Corp 半導体レーザ装置
US4944838A (en) * 1989-08-03 1990-07-31 At&T Bell Laboratories Method of making tapered semiconductor waveguides
US4932032A (en) * 1989-08-03 1990-06-05 At&T Bell Laboratories Tapered semiconductor waveguides
JP3233983B2 (ja) * 1991-05-24 2001-12-04 キヤノン株式会社 キャリアの吐き出しの為の手段を有する光検出器及びそれを用いた光通信システム
JPH0794833A (ja) * 1993-09-22 1995-04-07 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
US5439782A (en) * 1993-12-13 1995-08-08 At&T Corp. Methods for making microstructures
US5418805A (en) * 1994-01-11 1995-05-23 American Biogenetic Sciences, Inc. Device for pumping the active medium of a white light laser
US5428635A (en) * 1994-01-11 1995-06-27 American Biogenetic Sciences, Inc. Multi-wavelength tunable laser
US5418804A (en) * 1994-01-11 1995-05-23 American Biogenetic Sciences, Inc. Controlled spectrum generation laser
US5418803A (en) * 1994-01-11 1995-05-23 American Biogenetic Sciences, Inc. White light laser technology
US5998851A (en) * 1996-12-04 1999-12-07 The Furukawa Electric Co., Ltd. Optical waveguide type photodiode and a process of producing the same
JPH10173291A (ja) * 1996-12-11 1998-06-26 Mitsubishi Electric Corp 半導体レーザ装置
JP2005286196A (ja) * 2004-03-30 2005-10-13 Sumitomo Electric Ind Ltd 光集積素子
JP2005286192A (ja) * 2004-03-30 2005-10-13 Sumitomo Electric Ind Ltd 光集積素子
WO2020162754A1 (fr) * 2019-02-07 2020-08-13 Technische Universiteit Eindhoven Bloc de construction amélioré pour modulateur de phase à base de phosphure d'indium intégré électro-optique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase
US3758875A (en) * 1970-05-01 1973-09-11 Bell Telephone Labor Inc Double heterostructure junction lasers
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
US3747016A (en) * 1971-08-26 1973-07-17 Rca Corp Semiconductor injection laser
BE790590A (fr) * 1971-10-28 1973-02-15 Western Electric Co Modulateur optique
GB1414060A (en) * 1972-07-28 1975-11-12 Matsushita Electronics Corp Semoconductor devices

Also Published As

Publication number Publication date
JPS5124887A (fr) 1976-02-28
JPS5816349B2 (ja) 1983-03-30
DE2527179A1 (de) 1976-01-08
GB1513313A (en) 1978-06-07
FR2275879B1 (fr) 1977-12-02
US3993963A (en) 1976-11-23
CA1026857A (fr) 1978-02-21

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Legal Events

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ST Notification of lapse