FR2274348A1 - Monocristal en materiau semi-conducteur sur un cristal en materiau isolant - Google Patents

Monocristal en materiau semi-conducteur sur un cristal en materiau isolant

Info

Publication number
FR2274348A1
FR2274348A1 FR7420538A FR7420538A FR2274348A1 FR 2274348 A1 FR2274348 A1 FR 2274348A1 FR 7420538 A FR7420538 A FR 7420538A FR 7420538 A FR7420538 A FR 7420538A FR 2274348 A1 FR2274348 A1 FR 2274348A1
Authority
FR
France
Prior art keywords
crystal
crystals
alpha
semiconductor
difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7420538A
Other languages
English (en)
French (fr)
Other versions
FR2274348B1 (ref
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to FR7420538A priority Critical patent/FR2274348A1/fr
Publication of FR2274348A1 publication Critical patent/FR2274348A1/fr
Application granted granted Critical
Publication of FR2274348B1 publication Critical patent/FR2274348B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3412—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials including tin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7420538A 1974-06-13 1974-06-13 Monocristal en materiau semi-conducteur sur un cristal en materiau isolant Granted FR2274348A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7420538A FR2274348A1 (fr) 1974-06-13 1974-06-13 Monocristal en materiau semi-conducteur sur un cristal en materiau isolant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7420538A FR2274348A1 (fr) 1974-06-13 1974-06-13 Monocristal en materiau semi-conducteur sur un cristal en materiau isolant

Publications (2)

Publication Number Publication Date
FR2274348A1 true FR2274348A1 (fr) 1976-01-09
FR2274348B1 FR2274348B1 (ref) 1978-02-17

Family

ID=9140011

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7420538A Granted FR2274348A1 (fr) 1974-06-13 1974-06-13 Monocristal en materiau semi-conducteur sur un cristal en materiau isolant

Country Status (1)

Country Link
FR (1) FR2274348A1 (ref)

Also Published As

Publication number Publication date
FR2274348B1 (ref) 1978-02-17

Similar Documents

Publication Publication Date Title
SE406249B (sv) Halvledardon innefattande ett enkristallhalvledarsubstrat med ett polykristallint kiselskikt anordnat pa substratet, vilket skikt innehaller syre i omradet 2-4 atom-%
JPS533164A (en) Method of making single crystal silicon carbide
DE3684508D1 (de) Halbleiterwafer-praezisionschneidevorrichtung mit integrierten kompensatoren zur verringerung der durch temperaturaenderungen verursachten fehler.
IT1037445B (it) Metodo per l accrescimento di strati epitassiali di silicio
SE387496B (sv) Kvartskristallresonator
JPS5326280A (en) Crystal growth for mixed crystals of compund semiconductor
JPS5696727A (en) Manufacture of polycrystalline garnet and corresponding single crystal
CH613384A5 (en) Single crystal on the basis of gallium garnet
Swift et al. Internal friction of zinc single crystals
GB1551403A (en) Method of manufacturing single crystals of gallium nitride
GB1468106A (en) Method and apparatus for crystal growth
GB1477856A (en) Single crystal of semiconductive material on crystal of insulating material
IT1050941B (it) Procedimento e dispotivo per la fabbricazione di piastrelle di ceramica
JPS5296864A (en) Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor
US2213031A (en) Low frequency piezoelectric crystal
JPS5724591A (en) Manufacture of semiconductor laser device
ES372598A1 (es) Un metodo de fabricar cristales de carburo de silicio.
Nakamura CSL Theory for Ceramic Materials
SU500196A1 (ru) Сырьева смесь дл производства портландцементного клинкера
Sharma et al. Growth of single crystals of cadmium sulphide in evacuated ampoules
JPS5717494A (en) Manufacture of single crystal
SU70787A1 (ru) Способ получени радиокерамики
GB958690A (en) Improvements in or relating to piezoelectric devices
Scane Crystallographic data for the α and β isomers of 4-hydroxy-2: 2: 6-trimethylpiperidine
JPS5326663A (en) Manu facture of semiconductor device