FR2274348A1 - Lattice stress compensation in semiconductor monocrystal - grown on insulating crystal by changing compsn. of boundary layer - Google Patents

Lattice stress compensation in semiconductor monocrystal - grown on insulating crystal by changing compsn. of boundary layer

Info

Publication number
FR2274348A1
FR2274348A1 FR7420538A FR7420538A FR2274348A1 FR 2274348 A1 FR2274348 A1 FR 2274348A1 FR 7420538 A FR7420538 A FR 7420538A FR 7420538 A FR7420538 A FR 7420538A FR 2274348 A1 FR2274348 A1 FR 2274348A1
Authority
FR
France
Prior art keywords
compsn
changing
grown
crystals
boundary layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7420538A
Other languages
French (fr)
Other versions
FR2274348B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to FR7420538A priority Critical patent/FR2274348A1/en
Publication of FR2274348A1 publication Critical patent/FR2274348A1/en
Application granted granted Critical
Publication of FR2274348B1 publication Critical patent/FR2274348B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02535—Group 14 semiconducting materials including tin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Abstract

A semiconductor monocrystal grown on a crystal of an electrically insulating material is compensated for lattice stresses in the monocrystal, resulting from the difference in the physical properties of the 2 materials. The compensation can be achieved by (a) changing the compsn. of or (b) adding an element to at least one of the crystals at least at the boundary zone between the crystals or (c) mixing at least one of the crystals with the other, so that the difference in the lattice constants between the 2 crystals is reduced. Method is used for Si and other semiconductor monocrystals on spinel, quartz (alpha-SiO2), sapphire (Al2O3), zircon (ZrSiO4), carborundum (alpha-SiC), Be oxide (alpha-Be) etc. and their mixts.
FR7420538A 1974-06-13 1974-06-13 Lattice stress compensation in semiconductor monocrystal - grown on insulating crystal by changing compsn. of boundary layer Granted FR2274348A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7420538A FR2274348A1 (en) 1974-06-13 1974-06-13 Lattice stress compensation in semiconductor monocrystal - grown on insulating crystal by changing compsn. of boundary layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7420538A FR2274348A1 (en) 1974-06-13 1974-06-13 Lattice stress compensation in semiconductor monocrystal - grown on insulating crystal by changing compsn. of boundary layer

Publications (2)

Publication Number Publication Date
FR2274348A1 true FR2274348A1 (en) 1976-01-09
FR2274348B1 FR2274348B1 (en) 1978-02-17

Family

ID=9140011

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7420538A Granted FR2274348A1 (en) 1974-06-13 1974-06-13 Lattice stress compensation in semiconductor monocrystal - grown on insulating crystal by changing compsn. of boundary layer

Country Status (1)

Country Link
FR (1) FR2274348A1 (en)

Also Published As

Publication number Publication date
FR2274348B1 (en) 1978-02-17

Similar Documents

Publication Publication Date Title
GB1213867A (en) Method of manufacturing silicon carbide single crystal filaments
GB1320773A (en) Method for forming epitaxial crystals or wafers in selected regions of substraes
JPS5696727A (en) Manufacture of polycrystalline garnet and corresponding single crystal
GB1247214A (en) Improvements relating to the formation of single crystals
FR2274348A1 (en) Lattice stress compensation in semiconductor monocrystal - grown on insulating crystal by changing compsn. of boundary layer
US3625868A (en) Thin semiconductor growth layer on alumina deficient, crucible-pulled magnesium aluminum spinel monocrystal as well as the method for producing the layer and producing the monocrystals
GB1347395A (en) Electro-optic modulators
Shand The preparation and growth of single crystals of some ternary sulphides
NO157533C (en) PROCEDURE FOR THE PREPARATION OF POLYCrystalline GRANATES.
GB1468106A (en) Method and apparatus for crystal growth
GB1477856A (en) Single crystal of semiconductive material on crystal of insulating material
JPS5289070A (en) Semiconductor device
GB1048975A (en) Improvements in high density silicon
JPS5344170A (en) Production of semiconductor device
JPS5460858A (en) Manufacture of gallium arsenide crystal wafer
JPS53146299A (en) Production of silicon carbide substrate
GB1367121A (en) Method for producing bubble domains in magnetic film-substrate struc tures
FR2148166A1 (en) Semiconductor wafers - cut perpendicular to the 115 directions
Yavari et al. The Embrittlement of Metallic Glasses Based on Iron. Is It Due to Surface Crystallisation?
JPS5296864A (en) Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor
Nakamura CSL Theory for Ceramic Materials
Lefever et al. Influence of Crystal Growth on Domain Behavior in Yttrium Iron Garnet
JPS548200A (en) Lowering method for coefficient of thermal expansion of oxide single crystal
Sharma et al. Growth of single crystals of cadmium sulphide in evacuated ampoules
JPS57148344A (en) Manufacturing equipment for semiconductor