FR2273438A1 - Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation - Google Patents

Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation

Info

Publication number
FR2273438A1
FR2273438A1 FR7418636A FR7418636A FR2273438A1 FR 2273438 A1 FR2273438 A1 FR 2273438A1 FR 7418636 A FR7418636 A FR 7418636A FR 7418636 A FR7418636 A FR 7418636A FR 2273438 A1 FR2273438 A1 FR 2273438A1
Authority
FR
France
Prior art keywords
separation
fabrication
lateral faces
emitting diodes
absorbing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7418636A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7418636A priority Critical patent/FR2273438A1/en
Publication of FR2273438A1 publication Critical patent/FR2273438A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Method of fabrication of discrete electroluminescent diodes from a principal face of a crystal semiconductor. After the formation of the diodes (1) and the separation of the elementary crystals each carrying at least a discrete diode (1), a thin layer is deposited on the lateral faces (L1, L2) of the elementary crystal adjacent to the principal faces, the layer (7) being a material which absorbs the radiations emitted by the diode. The material used may have a high reflecting power, this material being either nickel or gold. The material forming the screening layer may be deposited by electrolytic means. A protective layer may be deposited on the principal face of the crystal before separation.
FR7418636A 1974-05-29 1974-05-29 Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation Withdrawn FR2273438A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7418636A FR2273438A1 (en) 1974-05-29 1974-05-29 Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7418636A FR2273438A1 (en) 1974-05-29 1974-05-29 Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation

Publications (1)

Publication Number Publication Date
FR2273438A1 true FR2273438A1 (en) 1975-12-26

Family

ID=9139408

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7418636A Withdrawn FR2273438A1 (en) 1974-05-29 1974-05-29 Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation

Country Status (1)

Country Link
FR (1) FR2273438A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0766355A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Method of mounting a semiconductor laser device
WO2001095402A2 (en) * 2000-06-08 2001-12-13 Showa Denko K.K. Semiconductor light-emitting device
WO2002075819A2 (en) * 2001-03-15 2002-09-26 Osram Opto Semiconductors Gmbh Radiation-emitting optical component

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0766355A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Method of mounting a semiconductor laser device
US5943553A (en) * 1995-09-29 1999-08-24 Siemens Aktiengesellschaft Applying semiconductor laser mirror layers after securing support plate to laser body
WO2001095402A2 (en) * 2000-06-08 2001-12-13 Showa Denko K.K. Semiconductor light-emitting device
WO2001095402A3 (en) * 2000-06-08 2002-06-20 Showa Denko Kk Semiconductor light-emitting device
US6952025B2 (en) 2000-06-08 2005-10-04 Showa Denko K.K. Semiconductor light-emitting device
WO2002075819A2 (en) * 2001-03-15 2002-09-26 Osram Opto Semiconductors Gmbh Radiation-emitting optical component
WO2002075819A3 (en) * 2001-03-15 2003-04-17 Osram Opto Semiconductors Gmbh Radiation-emitting optical component
US8039855B2 (en) 2001-03-15 2011-10-18 Osram Gmbh Radiation-emitting optical component

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Legal Events

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ST Notification of lapse