FR2266308A1 - Semiconductor diode with improved forward characteristics - has diffusion produced pn-junction with one side impurities connection - Google Patents
Semiconductor diode with improved forward characteristics - has diffusion produced pn-junction with one side impurities connectionInfo
- Publication number
- FR2266308A1 FR2266308A1 FR7510018A FR7510018A FR2266308A1 FR 2266308 A1 FR2266308 A1 FR 2266308A1 FR 7510018 A FR7510018 A FR 7510018A FR 7510018 A FR7510018 A FR 7510018A FR 2266308 A1 FR2266308 A1 FR 2266308A1
- Authority
- FR
- France
- Prior art keywords
- junction
- impurities
- zone
- semiconductor diode
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000009792 diffusion process Methods 0.000 title abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742415218 DE2415218A1 (de) | 1974-03-29 | 1974-03-29 | Halbleiterdiode |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2266308A1 true FR2266308A1 (en) | 1975-10-24 |
FR2266308B1 FR2266308B1 (it) | 1978-12-15 |
Family
ID=5911557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7510018A Granted FR2266308A1 (en) | 1974-03-29 | 1975-03-28 | Semiconductor diode with improved forward characteristics - has diffusion produced pn-junction with one side impurities connection |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS50131773A (it) |
DE (1) | DE2415218A1 (it) |
FR (1) | FR2266308A1 (it) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3633161A1 (de) * | 1986-09-30 | 1988-04-07 | Licentia Gmbh | Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone |
DE10031461B4 (de) | 2000-06-28 | 2006-06-29 | Infineon Technologies Ag | Hochvolt-Diode |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA960717A (en) * | 1971-09-13 | 1975-01-07 | Richard C. Wilson | Hollow metal bat with non-uniform weight distribution |
CA984007A (en) * | 1971-09-21 | 1976-02-17 | Antal Csicsatka | Four channel stereophonic system |
-
1974
- 1974-03-29 DE DE19742415218 patent/DE2415218A1/de not_active Ceased
-
1975
- 1975-03-26 JP JP3568375A patent/JPS50131773A/ja active Pending
- 1975-03-28 FR FR7510018A patent/FR2266308A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2266308B1 (it) | 1978-12-15 |
JPS50131773A (it) | 1975-10-18 |
DE2415218A1 (de) | 1975-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |