FR2260187A1 - Masking a semiconductor for ion implantation - avoiding use of strong acids for removal for window etching - Google Patents
Masking a semiconductor for ion implantation - avoiding use of strong acids for removal for window etchingInfo
- Publication number
- FR2260187A1 FR2260187A1 FR7403570A FR7403570A FR2260187A1 FR 2260187 A1 FR2260187 A1 FR 2260187A1 FR 7403570 A FR7403570 A FR 7403570A FR 7403570 A FR7403570 A FR 7403570A FR 2260187 A1 FR2260187 A1 FR 2260187A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor
- masking
- ion implantation
- strong acids
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002253 acid Substances 0.000 title abstract 2
- 150000007513 acids Chemical class 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title abstract 2
- 238000005468 ion implantation Methods 0.000 title abstract 2
- 230000000873 masking effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 229920001195 polyisoprene Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7403570A FR2260187A1 (en) | 1974-02-04 | 1974-02-04 | Masking a semiconductor for ion implantation - avoiding use of strong acids for removal for window etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7403570A FR2260187A1 (en) | 1974-02-04 | 1974-02-04 | Masking a semiconductor for ion implantation - avoiding use of strong acids for removal for window etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2260187A1 true FR2260187A1 (en) | 1975-08-29 |
| FR2260187B1 FR2260187B1 (enrdf_load_stackoverflow) | 1977-09-16 |
Family
ID=9134406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7403570A Granted FR2260187A1 (en) | 1974-02-04 | 1974-02-04 | Masking a semiconductor for ion implantation - avoiding use of strong acids for removal for window etching |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2260187A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0028786A1 (de) * | 1979-11-13 | 1981-05-20 | Deutsche ITT Industries GmbH | Ionenimplantationsverfahren |
| EP0038951A1 (de) * | 1980-04-25 | 1981-11-04 | Siemens Aktiengesellschaft | Verfahren zur Herstellung von Fotolackstrukturen für integrierte Halbleiterschaltungen |
-
1974
- 1974-02-04 FR FR7403570A patent/FR2260187A1/fr active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0028786A1 (de) * | 1979-11-13 | 1981-05-20 | Deutsche ITT Industries GmbH | Ionenimplantationsverfahren |
| EP0038951A1 (de) * | 1980-04-25 | 1981-11-04 | Siemens Aktiengesellschaft | Verfahren zur Herstellung von Fotolackstrukturen für integrierte Halbleiterschaltungen |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2260187B1 (enrdf_load_stackoverflow) | 1977-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |