FR2258724A1 - Semiconductor laser associated with optic wave guide - has composite substrate projecting through insulating layer - Google Patents
Semiconductor laser associated with optic wave guide - has composite substrate projecting through insulating layerInfo
- Publication number
- FR2258724A1 FR2258724A1 FR7501674A FR7501674A FR2258724A1 FR 2258724 A1 FR2258724 A1 FR 2258724A1 FR 7501674 A FR7501674 A FR 7501674A FR 7501674 A FR7501674 A FR 7501674A FR 2258724 A1 FR2258724 A1 FR 2258724A1
- Authority
- FR
- France
- Prior art keywords
- insulating layer
- substrate
- semiconductor laser
- wave guide
- composite substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43446974A | 1974-01-18 | 1974-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2258724A1 true FR2258724A1 (en) | 1975-08-18 |
FR2258724B1 FR2258724B1 (ru) | 1981-09-25 |
Family
ID=23724371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7501674A Granted FR2258724A1 (en) | 1974-01-18 | 1975-01-20 | Semiconductor laser associated with optic wave guide - has composite substrate projecting through insulating layer |
Country Status (4)
Country | Link |
---|---|
JP (2) | JPS5845196B2 (ru) |
DE (1) | DE2501782A1 (ru) |
FR (1) | FR2258724A1 (ru) |
SU (1) | SU722509A3 (ru) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2337449A1 (fr) * | 1975-12-29 | 1977-07-29 | Tokyo Inst Tech | Circuit optique integre du type a guide d'ondes a structures multiples heterogenes et son procede de fabrication |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61166193A (ja) * | 1985-01-18 | 1986-07-26 | Matsushita Electric Ind Co Ltd | 光集積回路 |
MX2019005536A (es) * | 2016-11-10 | 2019-09-09 | Qopsys S R L | Un motor fotonico resonante. |
DE102021004609A1 (de) | 2021-09-11 | 2023-03-16 | Eques Consulting GmbH | Vorrichtung und damit durchführbares Verfahren zur non-invasiven Konzentrationsbestimmung von Komponenten im menschlichen Blutkreislauf und Verwendung des Verfahrens. |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS529358B2 (ru) * | 1972-01-25 | 1977-03-15 |
-
1975
- 1975-01-17 DE DE19752501782 patent/DE2501782A1/de not_active Withdrawn
- 1975-01-17 SU SU752103057A patent/SU722509A3/ru active
- 1975-01-17 JP JP50007694A patent/JPS5845196B2/ja not_active Expired
- 1975-01-20 FR FR7501674A patent/FR2258724A1/fr active Granted
-
1983
- 1983-05-31 JP JP9686683A patent/JPS58218188A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2337449A1 (fr) * | 1975-12-29 | 1977-07-29 | Tokyo Inst Tech | Circuit optique integre du type a guide d'ondes a structures multiples heterogenes et son procede de fabrication |
Also Published As
Publication number | Publication date |
---|---|
JPS58218188A (ja) | 1983-12-19 |
SU722509A3 (ru) | 1980-03-15 |
JPS50105081A (ru) | 1975-08-19 |
JPS5845196B2 (ja) | 1983-10-07 |
FR2258724B1 (ru) | 1981-09-25 |
DE2501782A1 (de) | 1975-10-30 |
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