FR2256539A1 - Ohmic contact for semiconductors with hafnium silicide zone - between (doped) semiconductor zone and metal, giving high temp. stability - Google Patents

Ohmic contact for semiconductors with hafnium silicide zone - between (doped) semiconductor zone and metal, giving high temp. stability

Info

Publication number
FR2256539A1
FR2256539A1 FR7441907A FR7441907A FR2256539A1 FR 2256539 A1 FR2256539 A1 FR 2256539A1 FR 7441907 A FR7441907 A FR 7441907A FR 7441907 A FR7441907 A FR 7441907A FR 2256539 A1 FR2256539 A1 FR 2256539A1
Authority
FR
France
Prior art keywords
zone
pref
hfsi
ohmic contact
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7441907A
Other languages
French (fr)
Other versions
FR2256539B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2256539A1 publication Critical patent/FR2256539A1/en
Application granted granted Critical
Publication of FR2256539B1 publication Critical patent/FR2256539B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Ohmic contact, which is stable at temps. of up to 600 degrees C, has a HfSi zone between a semiconductor (I) zone and a zone of metallic material (II). (I) can be n- or p-Si with a zone of the opposite conductivity type, pref. >=10 000 Angstroms thick, on which the HfSi zone is formed, whilst (II) pref. is Al but can also be Ti, Cr, Au, Pd, Pt, W, Mo or an Al-Cu or Al-Si alloy. The HfSi can be produced by applying Hf to the required area of the substrate, using a mask, pref. of SiO2, heating, pref. to 600-700, esp. 650 degrees C to form HfSi and removing the unchanged Hf with a selective etchant, pref. an aq. soln. of HNO3 and H2SO4. Used in uni-and bo-polar transistors and esp. field effect transistors with very flat doped zones.
FR7441907A 1973-12-28 1974-11-22 Ohmic contact for semiconductors with hafnium silicide zone - between (doped) semiconductor zone and metal, giving high temp. stability Granted FR2256539A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42941673A 1973-12-28 1973-12-28

Publications (2)

Publication Number Publication Date
FR2256539A1 true FR2256539A1 (en) 1975-07-25
FR2256539B1 FR2256539B1 (en) 1976-10-22

Family

ID=23703151

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7441907A Granted FR2256539A1 (en) 1973-12-28 1974-11-22 Ohmic contact for semiconductors with hafnium silicide zone - between (doped) semiconductor zone and metal, giving high temp. stability

Country Status (3)

Country Link
JP (1) JPS5099266A (en)
DE (1) DE2457484A1 (en)
FR (1) FR2256539A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024625A2 (en) * 1979-08-31 1981-03-11 International Business Machines Corporation Method of producing an electrical contact on a Si substrate
EP0087573A2 (en) * 1982-02-26 1983-09-07 International Business Machines Corporation Method of making complementary field effect transistors

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0779136B2 (en) * 1986-06-06 1995-08-23 株式会社日立製作所 Semiconductor device
US5136363A (en) * 1987-10-21 1992-08-04 Kabushiki Kaisha Toshiba Semiconductor device with bump electrode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024625A2 (en) * 1979-08-31 1981-03-11 International Business Machines Corporation Method of producing an electrical contact on a Si substrate
EP0024625A3 (en) * 1979-08-31 1983-04-20 International Business Machines Corporation Method of producing an electrical contact on a si substrate
EP0087573A2 (en) * 1982-02-26 1983-09-07 International Business Machines Corporation Method of making complementary field effect transistors
EP0087573A3 (en) * 1982-02-26 1986-09-17 International Business Machines Corporation Method of making complementary field effect transistors

Also Published As

Publication number Publication date
FR2256539B1 (en) 1976-10-22
DE2457484A1 (en) 1975-07-10
JPS5099266A (en) 1975-08-06

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