FR2235483A1 - - Google Patents

Info

Publication number
FR2235483A1
FR2235483A1 FR7417747A FR7417747A FR2235483A1 FR 2235483 A1 FR2235483 A1 FR 2235483A1 FR 7417747 A FR7417747 A FR 7417747A FR 7417747 A FR7417747 A FR 7417747A FR 2235483 A1 FR2235483 A1 FR 2235483A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7417747A
Other versions
FR2235483B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2235483A1 publication Critical patent/FR2235483A1/fr
Application granted granted Critical
Publication of FR2235483B1 publication Critical patent/FR2235483B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
FR7417747A 1973-06-29 1974-05-15 Expired FR2235483B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US375278A US3871067A (en) 1973-06-29 1973-06-29 Method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
FR2235483A1 true FR2235483A1 (fr) 1975-01-24
FR2235483B1 FR2235483B1 (fr) 1978-11-17

Family

ID=23480240

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7417747A Expired FR2235483B1 (fr) 1973-06-29 1974-05-15

Country Status (7)

Country Link
US (1) US3871067A (fr)
JP (1) JPS5324300B2 (fr)
CA (1) CA1007763A (fr)
DE (1) DE2422120C3 (fr)
FR (1) FR2235483B1 (fr)
GB (1) GB1424959A (fr)
IT (1) IT1012364B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2309039A1 (fr) * 1975-04-21 1976-11-19 Sony Corp Dispositif semi-conducteur et procede pour realiser dans celui-ci une couche semi-isolante en silicium

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062720A (en) * 1976-08-23 1977-12-13 International Business Machines Corporation Process for forming a ledge-free aluminum-copper-silicon conductor structure
US4313768A (en) * 1978-04-06 1982-02-02 Harris Corporation Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate
US4402002A (en) * 1978-04-06 1983-08-30 Harris Corporation Radiation hardened-self aligned CMOS and method of fabrication
US4263605A (en) * 1979-01-04 1981-04-21 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted, improved ohmic contacts for GaAs semiconductor devices
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
JPS5723221A (en) * 1980-07-16 1982-02-06 Mitsubishi Electric Corp Manufacture of semiconductor device
US4373966A (en) * 1981-04-30 1983-02-15 International Business Machines Corporation Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering
GB2107744B (en) * 1981-10-06 1985-07-24 Itt Ind Ltd Making al/si films by ion implantation; integrated circuits
JPS58186967A (ja) * 1982-04-26 1983-11-01 Toshiba Corp 薄膜半導体装置の製造方法
JPH0750696B2 (ja) * 1987-12-14 1995-05-31 三菱電機株式会社 半導体装置の製造方法
JPH0750697B2 (ja) * 1989-02-20 1995-05-31 株式会社東芝 半導体装置の製造方法
KR0161116B1 (ko) * 1995-01-06 1999-02-01 문정환 반도체 장치의 금속층 형성방법
WO2008073400A1 (fr) 2006-12-11 2008-06-19 The Regents Of The University Of California Diodes électroluminescentes transparentes
US11738813B2 (en) 2016-11-01 2023-08-29 Loc Performance Products, Llc Urethane hybrid agricultural vehicle track
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3600797A (en) * 1967-12-26 1971-08-24 Hughes Aircraft Co Method of making ohmic contacts to semiconductor bodies by indirect ion implantation
BE759057A (fr) * 1969-11-19 1971-05-17 Philips Nv
US3620851A (en) * 1969-12-04 1971-11-16 William J King Method for making a buried layer semiconductor device
US3682729A (en) * 1969-12-30 1972-08-08 Ibm Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2309039A1 (fr) * 1975-04-21 1976-11-19 Sony Corp Dispositif semi-conducteur et procede pour realiser dans celui-ci une couche semi-isolante en silicium

Also Published As

Publication number Publication date
IT1012364B (it) 1977-03-10
DE2422120A1 (de) 1975-01-23
DE2422120C3 (de) 1982-03-25
JPS5024080A (fr) 1975-03-14
US3871067A (en) 1975-03-18
DE2422120B2 (de) 1981-07-02
GB1424959A (en) 1976-02-11
CA1007763A (en) 1977-03-29
JPS5324300B2 (fr) 1978-07-20
FR2235483B1 (fr) 1978-11-17

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Legal Events

Date Code Title Description
ST Notification of lapse