CA1007763A - Implantation of ions into a metal electrode - Google Patents
Implantation of ions into a metal electrodeInfo
- Publication number
- CA1007763A CA1007763A CA202,285A CA202285A CA1007763A CA 1007763 A CA1007763 A CA 1007763A CA 202285 A CA202285 A CA 202285A CA 1007763 A CA1007763 A CA 1007763A
- Authority
- CA
- Canada
- Prior art keywords
- implantation
- ions
- metal electrode
- electrode
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002513 implantation Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US375278A US3871067A (en) | 1973-06-29 | 1973-06-29 | Method of manufacturing a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1007763A true CA1007763A (en) | 1977-03-29 |
Family
ID=23480240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA202,285A Expired CA1007763A (en) | 1973-06-29 | 1974-06-12 | Implantation of ions into a metal electrode |
Country Status (7)
Country | Link |
---|---|
US (1) | US3871067A (fr) |
JP (1) | JPS5324300B2 (fr) |
CA (1) | CA1007763A (fr) |
DE (1) | DE2422120C3 (fr) |
FR (1) | FR2235483B1 (fr) |
GB (1) | GB1424959A (fr) |
IT (1) | IT1012364B (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51123562A (en) * | 1975-04-21 | 1976-10-28 | Sony Corp | Production method of semiconductor device |
US4062720A (en) * | 1976-08-23 | 1977-12-13 | International Business Machines Corporation | Process for forming a ledge-free aluminum-copper-silicon conductor structure |
US4402002A (en) * | 1978-04-06 | 1983-08-30 | Harris Corporation | Radiation hardened-self aligned CMOS and method of fabrication |
US4313768A (en) * | 1978-04-06 | 1982-02-02 | Harris Corporation | Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate |
US4263605A (en) * | 1979-01-04 | 1981-04-21 | The United States Of America As Represented By The Secretary Of The Navy | Ion-implanted, improved ohmic contacts for GaAs semiconductor devices |
US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
JPS5723221A (en) * | 1980-07-16 | 1982-02-06 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
US4373966A (en) * | 1981-04-30 | 1983-02-15 | International Business Machines Corporation | Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering |
GB2107744B (en) * | 1981-10-06 | 1985-07-24 | Itt Ind Ltd | Making al/si films by ion implantation; integrated circuits |
JPS58186967A (ja) * | 1982-04-26 | 1983-11-01 | Toshiba Corp | 薄膜半導体装置の製造方法 |
JPH0750696B2 (ja) * | 1987-12-14 | 1995-05-31 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPH0750697B2 (ja) * | 1989-02-20 | 1995-05-31 | 株式会社東芝 | 半導体装置の製造方法 |
KR0161116B1 (ko) * | 1995-01-06 | 1999-02-01 | 문정환 | 반도체 장치의 금속층 형성방법 |
WO2008073400A1 (fr) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Diodes électroluminescentes transparentes |
US11738813B2 (en) | 2016-11-01 | 2023-08-29 | Loc Performance Products, Llc | Urethane hybrid agricultural vehicle track |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3382568A (en) * | 1965-07-22 | 1968-05-14 | Ibm | Method for providing electrical connections to semiconductor devices |
US3600797A (en) * | 1967-12-26 | 1971-08-24 | Hughes Aircraft Co | Method of making ohmic contacts to semiconductor bodies by indirect ion implantation |
BE759057A (fr) * | 1969-11-19 | 1971-05-17 | Philips Nv | |
US3620851A (en) * | 1969-12-04 | 1971-11-16 | William J King | Method for making a buried layer semiconductor device |
US3682729A (en) * | 1969-12-30 | 1972-08-08 | Ibm | Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby |
-
1973
- 1973-06-29 US US375278A patent/US3871067A/en not_active Expired - Lifetime
-
1974
- 1974-04-24 GB GB1799074A patent/GB1424959A/en not_active Expired
- 1974-05-08 DE DE2422120A patent/DE2422120C3/de not_active Expired
- 1974-05-15 IT IT22719/74A patent/IT1012364B/it active
- 1974-05-15 FR FR7417747A patent/FR2235483B1/fr not_active Expired
- 1974-05-17 JP JP5462774A patent/JPS5324300B2/ja not_active Expired
- 1974-06-12 CA CA202,285A patent/CA1007763A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2422120C3 (de) | 1982-03-25 |
GB1424959A (en) | 1976-02-11 |
DE2422120A1 (de) | 1975-01-23 |
US3871067A (en) | 1975-03-18 |
JPS5324300B2 (fr) | 1978-07-20 |
FR2235483A1 (fr) | 1975-01-24 |
DE2422120B2 (de) | 1981-07-02 |
FR2235483B1 (fr) | 1978-11-17 |
IT1012364B (it) | 1977-03-10 |
JPS5024080A (fr) | 1975-03-14 |
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