FR2230086A1 - Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions - Google Patents

Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Info

Publication number
FR2230086A1
FR2230086A1 FR7317345A FR7317345A FR2230086A1 FR 2230086 A1 FR2230086 A1 FR 2230086A1 FR 7317345 A FR7317345 A FR 7317345A FR 7317345 A FR7317345 A FR 7317345A FR 2230086 A1 FR2230086 A1 FR 2230086A1
Authority
FR
France
Prior art keywords
obtd
substrate
high efficiency
type
solar cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7317345A
Other languages
English (en)
French (fr)
Other versions
FR2230086B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National dEtudes Spatiales CNES
Original Assignee
Centre National dEtudes Spatiales CNES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National dEtudes Spatiales CNES filed Critical Centre National dEtudes Spatiales CNES
Priority to FR7317345A priority Critical patent/FR2230086A1/fr
Publication of FR2230086A1 publication Critical patent/FR2230086A1/fr
Application granted granted Critical
Publication of FR2230086B1 publication Critical patent/FR2230086B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
FR7317345A 1973-05-14 1973-05-14 Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions Granted FR2230086A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7317345A FR2230086A1 (en) 1973-05-14 1973-05-14 Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7317345A FR2230086A1 (en) 1973-05-14 1973-05-14 Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Publications (2)

Publication Number Publication Date
FR2230086A1 true FR2230086A1 (en) 1974-12-13
FR2230086B1 FR2230086B1 (enrdf_load_stackoverflow) 1977-04-29

Family

ID=9119276

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7317345A Granted FR2230086A1 (en) 1973-05-14 1973-05-14 Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions

Country Status (1)

Country Link
FR (1) FR2230086A1 (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644829A1 (de) * 1975-10-08 1977-04-21 Rca Corp Halbleiter-aufnahmebauteil
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
EP0009125A1 (de) * 1978-09-19 1980-04-02 Siemens Aktiengesellschaft Halbleiterbauelement mit passivierender Schutzschicht
DE2846096A1 (de) * 1978-10-23 1980-04-24 Rudolf Dipl Phys Dr Hezel Solarzelle aus halbleitermaterial
FR2440081A1 (fr) * 1978-10-23 1980-05-23 Hezel Rudolf Pile solaire en materiau semiconducteur
US4404422A (en) * 1980-09-26 1983-09-13 Unisearch Limited High efficiency solar cell structure
WO1994028589A1 (en) * 1993-06-01 1994-12-08 Electric Power Research Institute Advanced solar cell
EP3583630A4 (en) * 2017-02-15 2020-12-30 ElFys Oy SEMICONDUCTOR STRUCTURES AND THEIR MANUFACTURING

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644829A1 (de) * 1975-10-08 1977-04-21 Rca Corp Halbleiter-aufnahmebauteil
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
EP0009125A1 (de) * 1978-09-19 1980-04-02 Siemens Aktiengesellschaft Halbleiterbauelement mit passivierender Schutzschicht
DE2846096A1 (de) * 1978-10-23 1980-04-24 Rudolf Dipl Phys Dr Hezel Solarzelle aus halbleitermaterial
FR2440081A1 (fr) * 1978-10-23 1980-05-23 Hezel Rudolf Pile solaire en materiau semiconducteur
US4404422A (en) * 1980-09-26 1983-09-13 Unisearch Limited High efficiency solar cell structure
WO1994028589A1 (en) * 1993-06-01 1994-12-08 Electric Power Research Institute Advanced solar cell
EP3583630A4 (en) * 2017-02-15 2020-12-30 ElFys Oy SEMICONDUCTOR STRUCTURES AND THEIR MANUFACTURING
US10950737B2 (en) 2017-02-15 2021-03-16 Elfys Oy Semiconductor structures and manufacturing the same

Also Published As

Publication number Publication date
FR2230086B1 (enrdf_load_stackoverflow) 1977-04-29

Similar Documents

Publication Publication Date Title
GB1451096A (en) Semiconductor devices
GB1423085A (en) Thin low temperature epi regions by conversion of an amorphous layer
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
FR2230086A1 (en) Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions
CA1030380A (en) Fabrication of silicon solar cell with anti-reflective film
EP0105623A3 (en) Electrolytic photodissociation of chemical compounds by iron oxide electrodes
EP0241226A3 (en) Semiconductor device and method of making it
AU498057B2 (en) High efficiency selenium heterojunction solar cells
ES465768A1 (es) Procedimiento para fabricar una celula fotoelectrica.
JPS55130182A (en) P-n hetero junction solar battery
JPS52124888A (en) Production of solar battery
JPS5356988A (en) Photovoltaic element
JPS5670675A (en) Manufacture of photoelectric converter
JPS55141766A (en) Manufacturing of semiconductor light position detector
KR920006198B1 (ko) 태양전지 제조방법
JPS5680178A (en) Gaas solar cell
JPS5378796A (en) Solar battery
JPS5354996A (en) Productin of solar battery
CALL Inversion layer solar cell fabrication and evaluation(Inversion layer silicon solar cells with induced junctions)[Midway Report]
JPS5745273A (en) Semiconductor device
JPS56148875A (en) Photoelectric conversion semiconductor device and manufacture thereof
JPS5279871A (en) Production of impurity diffused layer
Gavrilov et al. Solar cells from gallium arsenide obtained by ion bombardment
JPS6455840A (en) Semiconductor device
JPS56142649A (en) Semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse