FR2200635A1 - - Google Patents

Info

Publication number
FR2200635A1
FR2200635A1 FR7334157A FR7334157A FR2200635A1 FR 2200635 A1 FR2200635 A1 FR 2200635A1 FR 7334157 A FR7334157 A FR 7334157A FR 7334157 A FR7334157 A FR 7334157A FR 2200635 A1 FR2200635 A1 FR 2200635A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7334157A
Other languages
French (fr)
Other versions
FR2200635B1 (
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2200635A1 publication Critical patent/FR2200635A1/fr
Application granted granted Critical
Publication of FR2200635B1 publication Critical patent/FR2200635B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/098—Layer conversion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
FR7334157A 1972-09-22 1973-09-24 Expired FR2200635B1 ( )

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47095341A JPS5942463B2 (ja) 1972-09-22 1972-09-22 半導体集積回路装置

Publications (2)

Publication Number Publication Date
FR2200635A1 true FR2200635A1 ( ) 1974-04-19
FR2200635B1 FR2200635B1 ( ) 1978-11-10

Family

ID=14134981

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7334157A Expired FR2200635B1 ( ) 1972-09-22 1973-09-24

Country Status (8)

Country Link
US (1) US3912555A ( )
JP (1) JPS5942463B2 ( )
CA (1) CA1011467A ( )
DE (1) DE2347745A1 ( )
FR (1) FR2200635B1 ( )
GB (1) GB1444633A ( )
IT (1) IT993367B ( )
NL (1) NL7313144A ( )

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2309040A1 (fr) * 1975-04-22 1976-11-19 Tokyo Shibaura Electric Co Circuit integre comportant un transistor vertical a base epitaxiale
FR2581796A1 (fr) * 1985-05-09 1986-11-14 Sgs Microelettronica Spa Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
CA1047652A (en) * 1975-07-31 1979-01-30 National Semiconductor Corporation Monolithic integrated circuit transistor having very low collector resistance
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process
US4168997A (en) * 1978-10-10 1979-09-25 National Semiconductor Corporation Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer
JPS55153365A (en) * 1979-05-17 1980-11-29 Toshiba Corp Manufacturing method of semiconductor device
US4274891A (en) * 1979-06-29 1981-06-23 International Business Machines Corporation Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition
JPS5750473A (en) * 1980-09-11 1982-03-24 Nec Corp Semiconductor integrated circuit device
KR900001267B1 (ko) * 1983-11-30 1990-03-05 후지쓰 가부시끼가이샤 Soi형 반도체 장치의 제조방법
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
US5014107A (en) * 1987-07-29 1991-05-07 Fairchild Semiconductor Corporation Process for fabricating complementary contactless vertical bipolar transistors
US5023194A (en) * 1988-02-11 1991-06-11 Exar Corporation Method of making a multicollector vertical pnp transistor
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit
US5061652A (en) * 1990-01-23 1991-10-29 International Business Machines Corporation Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure
US5159429A (en) * 1990-01-23 1992-10-27 International Business Machines Corporation Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
DE69232348T2 (de) * 1991-09-24 2002-08-14 Matsushita Electric Ind Co Ltd Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
US5623159A (en) * 1994-10-03 1997-04-22 Motorola, Inc. Integrated circuit isolation structure for suppressing high-frequency cross-talk
US5633180A (en) * 1995-06-01 1997-05-27 Harris Corporation Method of forming P-type islands over P-type buried layer
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449643A (en) * 1966-09-09 1969-06-10 Hitachi Ltd Semiconductor integrated circuit device
FR1559608A ( ) * 1967-06-30 1969-03-14
US3638079A (en) * 1970-01-28 1972-01-25 Sylvania Electric Prod Complementary semiconductor devices in monolithic integrated circuits

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2309040A1 (fr) * 1975-04-22 1976-11-19 Tokyo Shibaura Electric Co Circuit integre comportant un transistor vertical a base epitaxiale
FR2581796A1 (fr) * 1985-05-09 1986-11-14 Sgs Microelettronica Spa Circuit integre bipolaire comprenant des transistors pnp verticaux avec collecteur sur le substrat, et procede pour la realisation d'un tel circuit

Also Published As

Publication number Publication date
US3912555A (en) 1975-10-14
JPS4952987A ( ) 1974-05-23
DE2347745A1 (de) 1974-04-04
CA1011467A (en) 1977-05-31
IT993367B (it) 1975-09-30
JPS5942463B2 (ja) 1984-10-15
FR2200635B1 ( ) 1978-11-10
GB1444633A (en) 1976-08-04
NL7313144A ( ) 1974-03-26

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