FR2181075A1 - - Google Patents

Info

Publication number
FR2181075A1
FR2181075A1 FR7314645A FR7314645A FR2181075A1 FR 2181075 A1 FR2181075 A1 FR 2181075A1 FR 7314645 A FR7314645 A FR 7314645A FR 7314645 A FR7314645 A FR 7314645A FR 2181075 A1 FR2181075 A1 FR 2181075A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7314645A
Other languages
French (fr)
Other versions
FR2181075B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2181075A1 publication Critical patent/FR2181075A1/fr
Application granted granted Critical
Publication of FR2181075B1 publication Critical patent/FR2181075B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR7314645A 1972-04-20 1973-04-20 Expired FR2181075B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3975972A JPS5320194B2 (enrdf_load_stackoverflow) 1972-04-20 1972-04-20

Publications (2)

Publication Number Publication Date
FR2181075A1 true FR2181075A1 (enrdf_load_stackoverflow) 1973-11-30
FR2181075B1 FR2181075B1 (enrdf_load_stackoverflow) 1977-12-30

Family

ID=12561864

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7314645A Expired FR2181075B1 (enrdf_load_stackoverflow) 1972-04-20 1973-04-20

Country Status (7)

Country Link
JP (1) JPS5320194B2 (enrdf_load_stackoverflow)
CA (1) CA985794A (enrdf_load_stackoverflow)
DE (1) DE2320579C3 (enrdf_load_stackoverflow)
FR (1) FR2181075B1 (enrdf_load_stackoverflow)
GB (1) GB1427014A (enrdf_load_stackoverflow)
IT (1) IT1049525B (enrdf_load_stackoverflow)
NL (1) NL7305642A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438915A1 (fr) * 1978-10-10 1980-05-09 Bbc Brown Boveri & Cie Composant a semi-conducteur de puissance et a anneaux protecteurs
EP0361319A3 (de) * 1988-09-27 1990-06-06 Asea Brown Boveri Aktiengesellschaft Leistungshalbleiterbauelement
EP0361318A3 (en) * 1988-09-27 1990-06-13 Asea Brown Boveri Aktiengesellschaft Thyristor
EP0426252A3 (en) * 1989-11-01 1991-06-26 Philips Electronic And Associated Industries Limited A semiconductor device and method of manufacturing a semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH594989A5 (enrdf_load_stackoverflow) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
US6011298A (en) * 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
DE19930783A1 (de) * 1999-07-03 2001-01-04 Bosch Gmbh Robert Halbleiterbauelement
GB2373634B (en) 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
GB2403346B (en) * 2000-10-31 2005-05-11 Fuji Electric Co Ltd Semiconductor device
JP5011611B2 (ja) 2001-06-12 2012-08-29 富士電機株式会社 半導体装置
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
CN106505092B (zh) * 2016-08-18 2024-05-14 全球能源互联网研究院 一种垂直型半导体器件的双面终端结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
GB1078273A (en) * 1964-10-19 1967-08-09 Sony Corp Semiconductor device
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
DE1614751A1 (de) * 1967-01-07 1970-12-03 Telefunken Patent Halbleiteranordnung
DE1789043A1 (de) * 1967-10-14 1972-01-05 Sgs Sa Mit Schutzringen versehene Planar-Halbleitervorrichtungen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438915A1 (fr) * 1978-10-10 1980-05-09 Bbc Brown Boveri & Cie Composant a semi-conducteur de puissance et a anneaux protecteurs
EP0361319A3 (de) * 1988-09-27 1990-06-06 Asea Brown Boveri Aktiengesellschaft Leistungshalbleiterbauelement
EP0361318A3 (en) * 1988-09-27 1990-06-13 Asea Brown Boveri Aktiengesellschaft Thyristor
EP0426252A3 (en) * 1989-11-01 1991-06-26 Philips Electronic And Associated Industries Limited A semiconductor device and method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPS5320194B2 (enrdf_load_stackoverflow) 1978-06-24
NL7305642A (enrdf_load_stackoverflow) 1973-10-23
JPS493580A (enrdf_load_stackoverflow) 1974-01-12
CA985794A (en) 1976-03-16
DE2320579B2 (de) 1976-10-28
FR2181075B1 (enrdf_load_stackoverflow) 1977-12-30
DE2320579C3 (de) 1983-11-10
DE2320579A1 (de) 1973-11-08
IT1049525B (it) 1981-02-10
GB1427014A (en) 1976-03-03

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Legal Events

Date Code Title Description
ST Notification of lapse