FR2162373A1 - - Google Patents

Info

Publication number
FR2162373A1
FR2162373A1 FR7240425A FR7240425A FR2162373A1 FR 2162373 A1 FR2162373 A1 FR 2162373A1 FR 7240425 A FR7240425 A FR 7240425A FR 7240425 A FR7240425 A FR 7240425A FR 2162373 A1 FR2162373 A1 FR 2162373A1
Authority
FR
France
Prior art keywords
substrate
doped
semi
deposited
epitaxially deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7240425A
Other languages
French (fr)
Other versions
FR2162373B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2162373A1 publication Critical patent/FR2162373A1/fr
Application granted granted Critical
Publication of FR2162373B1 publication Critical patent/FR2162373B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1372610 Semi-conductor devices INTER. NATIONAL BUSINESS MACHINES CORP 21 Nov 1972 [10 Dec 1971] 53667/72 Heading H1K A FET comprises a substrate 1 of Cr doped semi-insulant GaAs produced from a sliced and polished crystal which is infra-red heated in an open tube reactor in a circulating H 2 atmosphere, to which AsCl 3 is added; the gas flowing over a boat containing Ga saturated with As, the substrate being cut parallel to the 111 crystal plane and coated on the side exhibiting more Ga atoms at the surface. An undoped buffer layer is epitaxially deposited thereon, into which physical defects of the interface plane of substrate 1 extend. Therefore, a further highly conductive layer 8 doped with sulphur from H 2 S is epitaxially deposited to suppress the imperfections and provide a channel layer on which ohmic source drain contacts 3, 5 and Schottky gate control 4 are conventionally deposited.
FR7240425A 1971-12-10 1972-11-08 Expired FR2162373B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1801771A CH572985A5 (en) 1971-12-10 1971-12-10

Publications (2)

Publication Number Publication Date
FR2162373A1 true FR2162373A1 (en) 1973-07-20
FR2162373B1 FR2162373B1 (en) 1978-03-03

Family

ID=4429804

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7240425A Expired FR2162373B1 (en) 1971-12-10 1972-11-08

Country Status (5)

Country Link
JP (1) JPS4866773A (en)
CH (1) CH572985A5 (en)
DE (1) DE2255508A1 (en)
FR (1) FR2162373B1 (en)
GB (1) GB1372610A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0014116A1 (en) * 1979-01-26 1980-08-06 Thomson-Csf Heterojunction semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5154366A (en) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp HANDOTAI EPITAKI SHIARUEHAA
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
JPS61158185A (en) * 1984-12-28 1986-07-17 Hosiden Electronics Co Ltd Thin film transistor
JP2762919B2 (en) * 1994-03-24 1998-06-11 日本電気株式会社 Semiconductor element

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
*REVUE AMERICAINE IBM " TECHNICAL DISCLOSURE BULLETIN" VOLUME 15, NO 2, JUILLET 1972 : "EPITAXIAL DEPOSITION PROCESS R.L. BRATIER ET AL., PAGE 684.) *
REVUE AMERICAINE IBM "TECHNICAL DISCLOSURE BULLETIN" VOLUME 12, NO 9, FEVRIER 1970 "TEDUCTION OF STRESS IN SINGLE CRYSTAL HETERO-EPITAXIAL LAYERS" M.BERKENBLIT, PAGE 1489. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0014116A1 (en) * 1979-01-26 1980-08-06 Thomson-Csf Heterojunction semiconductor device

Also Published As

Publication number Publication date
JPS4866773A (en) 1973-09-12
GB1372610A (en) 1974-10-30
CH572985A5 (en) 1976-02-27
DE2255508A1 (en) 1973-06-20
FR2162373B1 (en) 1978-03-03

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Legal Events

Date Code Title Description
ST Notification of lapse