FR2130353A1 - Gas-etching for silicon nitride deposits - by glow discharge technique - Google Patents

Gas-etching for silicon nitride deposits - by glow discharge technique

Info

Publication number
FR2130353A1
FR2130353A1 FR7209315A FR7209315A FR2130353A1 FR 2130353 A1 FR2130353 A1 FR 2130353A1 FR 7209315 A FR7209315 A FR 7209315A FR 7209315 A FR7209315 A FR 7209315A FR 2130353 A1 FR2130353 A1 FR 2130353A1
Authority
FR
France
Prior art keywords
glow discharge
etching
silicon nitride
degrees
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7209315A
Other languages
English (en)
French (fr)
Other versions
FR2130353B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2130353A1 publication Critical patent/FR2130353A1/fr
Application granted granted Critical
Publication of FR2130353B1 publication Critical patent/FR2130353B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69433—
    • H10P14/6334—
    • H10P14/6529—
    • H10P14/6682—
    • H10P50/283—

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
FR7209315A 1971-03-19 1972-03-17 Gas-etching for silicon nitride deposits - by glow discharge technique Granted FR2130353A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12626471A 1971-03-19 1971-03-19

Publications (2)

Publication Number Publication Date
FR2130353A1 true FR2130353A1 (en) 1972-11-03
FR2130353B1 FR2130353B1 (enExample) 1977-03-25

Family

ID=22423889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7209315A Granted FR2130353A1 (en) 1971-03-19 1972-03-17 Gas-etching for silicon nitride deposits - by glow discharge technique

Country Status (2)

Country Link
DE (1) DE2213036C3 (enExample)
FR (1) FR2130353A1 (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors
FR2035224A5 (enExample) * 1969-02-10 1970-12-18 Westinghouse Electric Corp
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors
FR2035224A5 (enExample) * 1969-02-10 1970-12-18 Westinghouse Electric Corp
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process

Also Published As

Publication number Publication date
FR2130353B1 (enExample) 1977-03-25
DE2213036B2 (de) 1976-11-11
DE2213036C3 (de) 1978-06-15
DE2213036A1 (de) 1972-09-21

Similar Documents

Publication Publication Date Title
GB1520838A (en) Activated gas reaction apparatus
JPS5329076A (en) Plasma treating apparatus of semiconductor substrates
ES480925A1 (es) Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor.
FR2130353A1 (en) Gas-etching for silicon nitride deposits - by glow discharge technique
GB978992A (en) Insulation
JPS51118984A (en) Supersonic ceramic microphone
JPS6437028A (en) Manufacture of semiconductor element
JPS5298475A (en) Plasma treating apparatus
JPS5767009A (en) Formation of film
FR2238249A1 (en) Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate
ES349369A1 (es) Un metodo para tratar una cara de un cuerpo semiconductor.
FR2039996A5 (en) Crystallographically oriented surface - coatings
JPS525700A (en) The process for production of silicon nitride
JPS5220770A (en) Semi-conductor unit
FR2334734A1 (fr) Produit d'entretien des meubles et peintures
FR2157168A5 (en) Fin removal from metal articles - by flame or corrosion treatment
JPS51116200A (en) Method for formation of uniform and single phase silicon carbide coati ng
JPS51125900A (en) Ferroelectric ceramic compound
FR2077336A7 (en) Vacuum anodising of aluminium
JPS5259588A (en) Production of semiconductor element
JPS57104221A (en) Plasma etching method
FR2080930A1 (en) Field isolation for semi-conductor devices
JPS51134086A (en) Method to manufacture distortion of semiconductor
JPS5263681A (en) Production of mesa type semiconductor device
FR2132659A1 (en) Metal cleaner based on trichloroethane

Legal Events

Date Code Title Description
ST Notification of lapse