FR2081017B2 - - Google Patents

Info

Publication number
FR2081017B2
FR2081017B2 FR7105551A FR7105551A FR2081017B2 FR 2081017 B2 FR2081017 B2 FR 2081017B2 FR 7105551 A FR7105551 A FR 7105551A FR 7105551 A FR7105551 A FR 7105551A FR 2081017 B2 FR2081017 B2 FR 2081017B2
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7105551A
Other languages
French (fr)
Other versions
FR2081017A2 (en
Inventor
E Kooi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL666614016A external-priority patent/NL153374B/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2081017A2 publication Critical patent/FR2081017A2/fr
Application granted granted Critical
Publication of FR2081017B2 publication Critical patent/FR2081017B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W10/012—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10P14/61—
    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—
FR7105551A 1966-10-05 1971-02-18 Fabrication of a semiconductor device Granted FR2081017A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL666614016A NL153374B (nl) 1966-10-05 1966-10-05 Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
NL7002384.A NL159817B (nl) 1966-10-05 1970-02-19 Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
FR2081017A2 FR2081017A2 (en) 1971-11-26
FR2081017B2 true FR2081017B2 (OSRAM) 1976-03-19

Family

ID=26644100

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7105551A Granted FR2081017A2 (en) 1966-10-05 1971-02-18 Fabrication of a semiconductor device

Country Status (5)

Country Link
AT (1) AT339959B (OSRAM)
DE (1) DE2105178C3 (OSRAM)
FR (1) FR2081017A2 (OSRAM)
NL (1) NL159817B (OSRAM)
SE (1) SE372139B (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL170901C (nl) * 1971-04-03 1983-01-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4044454A (en) * 1975-04-16 1977-08-30 Ibm Corporation Method for forming integrated circuit regions defined by recessed dielectric isolation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3254277A (en) * 1963-02-27 1966-05-31 United Aircraft Corp Integrated circuit with component defining groove
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
GB1205320A (en) * 1967-10-28 1970-09-16 Nippon Telegraph & Telephone Improvements in or relating to the production of semiconductor devices
US3488564A (en) * 1968-04-01 1970-01-06 Fairchild Camera Instr Co Planar epitaxial resistors
US3649386A (en) * 1968-04-23 1972-03-14 Bell Telephone Labor Inc Method of fabricating semiconductor devices

Also Published As

Publication number Publication date
NL7002384A (OSRAM) 1971-08-23
SE372139B (OSRAM) 1974-12-09
AT339959B (de) 1977-11-25
ATA130671A (de) 1977-03-15
FR2081017A2 (en) 1971-11-26
DE2105178B2 (de) 1979-07-12
NL159817B (nl) 1979-03-15
DE2105178C3 (de) 1983-12-22
DE2105178A1 (de) 1971-09-02

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