FR2077260A1 - - Google Patents

Info

Publication number
FR2077260A1
FR2077260A1 FR7030952A FR7030952A FR2077260A1 FR 2077260 A1 FR2077260 A1 FR 2077260A1 FR 7030952 A FR7030952 A FR 7030952A FR 7030952 A FR7030952 A FR 7030952A FR 2077260 A1 FR2077260 A1 FR 2077260A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7030952A
Other languages
French (fr)
Other versions
FR2077260B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26673563&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR2077260(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Intel Corp filed Critical Intel Corp
Publication of FR2077260A1 publication Critical patent/FR2077260A1/fr
Application granted granted Critical
Publication of FR2077260B1 publication Critical patent/FR2077260B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/133—Reflow oxides and glasses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
FR7030952A 1970-01-22 1970-08-24 Expired FR2077260B1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US484170A 1970-01-22 1970-01-22
US00292510A US3825442A (en) 1970-01-22 1972-09-27 Method of a semiconductor device wherein film cracking is prevented by formation of a glass layer

Publications (2)

Publication Number Publication Date
FR2077260A1 true FR2077260A1 (enExample) 1971-10-22
FR2077260B1 FR2077260B1 (enExample) 1976-07-23

Family

ID=26673563

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7030952A Expired FR2077260B1 (enExample) 1970-01-22 1970-08-24

Country Status (5)

Country Link
US (1) US3825442A (enExample)
DE (1) DE2040180B2 (enExample)
FR (1) FR2077260B1 (enExample)
GB (1) GB1326947A (enExample)
NL (1) NL151560B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2203171A1 (enExample) * 1972-10-12 1974-05-10 Ncr Co
FR2286504A1 (fr) * 1974-09-24 1976-04-23 Siemens Ag Procede pour la fabrication de circuits integres

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986903A (en) * 1974-03-13 1976-10-19 Intel Corporation Mosfet transistor and method of fabrication
US4030952A (en) * 1974-04-18 1977-06-21 Fairchild Camera And Instrument Corporation Method of MOS circuit fabrication
US3887733A (en) * 1974-04-24 1975-06-03 Motorola Inc Doped oxide reflow process
US3912558A (en) * 1974-05-03 1975-10-14 Fairchild Camera Instr Co Method of MOS circuit fabrication
JPS5142480A (en) * 1974-10-08 1976-04-10 Nippon Electric Co Handotaisochino seizohoho
GB1504484A (en) * 1975-08-13 1978-03-22 Tokyo Shibaura Electric Co Semiconductor device and a method for manufacturing the same
DE2634095C2 (de) * 1976-07-29 1982-11-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Abflachung und Einebnung von Stufen auf der Oberfläche einer integrierte Schaltungen aufweisenden Halbleiterscheibe
IT1089299B (it) 1977-01-26 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
US4183135A (en) * 1977-08-29 1980-01-15 Motorola, Inc. Hermetic glass encapsulation for semiconductor die and method
JPS5492175A (en) * 1977-12-29 1979-07-21 Fujitsu Ltd Manufacture of semiconductor device
US4214917A (en) * 1978-02-10 1980-07-29 Emm Semi Process of forming a semiconductor memory cell with continuous polysilicon run circuit elements
US4191603A (en) * 1978-05-01 1980-03-04 International Business Machines Corporation Making semiconductor structure with improved phosphosilicate glass isolation
US4251571A (en) * 1978-05-02 1981-02-17 International Business Machines Corporation Method for forming semiconductor structure with improved isolation between two layers of polycrystalline silicon
JPS54147789A (en) * 1978-05-11 1979-11-19 Matsushita Electric Ind Co Ltd Semiconductor divice and its manufacture
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride
USRE32351E (en) * 1978-06-19 1987-02-17 Rca Corporation Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
JPS5534444A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semiconductor device
US4206254A (en) * 1979-02-28 1980-06-03 International Business Machines Corporation Method of selectively depositing metal on a ceramic substrate with a metallurgy pattern
US4355454A (en) * 1979-09-05 1982-10-26 Texas Instruments Incorporated Coating device with As2 -O3 -SiO2
DE2937993A1 (de) * 1979-09-20 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-halbleiterschaltungen nach der silizium-gate-technologie
JPS5669835A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Method for forming thin film pattern
CA1174285A (en) * 1980-04-28 1984-09-11 Michelangelo Delfino Laser induced flow of integrated circuit structure materials
US4542037A (en) * 1980-04-28 1985-09-17 Fairchild Camera And Instrument Corporation Laser induced flow of glass bonded materials
US4284659A (en) * 1980-05-12 1981-08-18 Bell Telephone Laboratories Insulation layer reflow
JPS57126147A (en) * 1981-01-28 1982-08-05 Fujitsu Ltd Manufacture of semiconductor device
US4455325A (en) * 1981-03-16 1984-06-19 Fairchild Camera And Instrument Corporation Method of inducing flow or densification of phosphosilicate glass for integrated circuits
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
DE3130666A1 (de) * 1981-08-03 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen integrieter mos-feldeffekttransistoren mit einer phosphorsilikatglasschicht als zwischenoxidschicht
DE3131050A1 (de) * 1981-08-05 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren unter verwendung einer aus phosphorsilikatglas bestehenden obewrflaechenschicht auf dem zwischenoxid zwischen polysiliziumebene und metall-leiterbahnebene
DE3133516A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum verrunden des zwischenoxids zwischen polysiliziumebene und metall-leiterbahnebene beim herstellen von integrierten n-kanal-mos-feldeffekttransistoren
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板
US4476621A (en) * 1983-02-01 1984-10-16 Gte Communications Products Corporation Process for making transistors with doped oxide densification
US4496608A (en) * 1984-03-02 1985-01-29 Xerox Corporation P-Glass reflow technique
US4663414A (en) * 1985-05-14 1987-05-05 Stauffer Chemical Company Phospho-boro-silanol interlayer dielectric films and preparation
DE3881074T2 (de) * 1987-02-27 1993-09-02 Toshiba Kawasaki Kk Nichtfluechtige, durch ultraviolette strahlung loeschbare halbleiterspeicheranordnung und verfahren zu ihrer herstellung.
US4784973A (en) * 1987-08-24 1988-11-15 Inmos Corporation Semiconductor contact silicide/nitride process with control for silicide thickness
US4948743A (en) * 1988-06-29 1990-08-14 Matsushita Electronics Corporation Method of manufacturing a semiconductor device
EP0388075B1 (en) * 1989-03-16 1996-11-06 STMicroelectronics, Inc. Contacts for semiconductor devices
JP2556138B2 (ja) * 1989-06-30 1996-11-20 日本電気株式会社 半導体装置の製造方法
JP3128811B2 (ja) * 1990-08-07 2001-01-29 セイコーエプソン株式会社 半導体装置の製造方法
JP3584338B2 (ja) * 1994-03-03 2004-11-04 ローム・ユーエスエー・インク 電気的に消去及びプログラム可能なデバイスの消去方法
US5419787A (en) * 1994-06-24 1995-05-30 The United States Of America As Represented By The Secretary Of The Air Force Stress reduced insulator
US5738931A (en) * 1994-09-16 1998-04-14 Kabushiki Kaisha Toshiba Electronic device and magnetic device
US6087733A (en) * 1998-06-12 2000-07-11 Intel Corporation Sacrificial erosion control features for chemical-mechanical polishing process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383568A (en) * 1965-02-04 1968-05-14 Texas Instruments Inc Semiconductor device utilizing glass and oxides as an insulator for hermetically sealing the junctions
FR1559352A (enExample) * 1967-03-27 1969-03-07
NL6906890A (enExample) * 1968-05-07 1969-11-11

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383568A (en) * 1965-02-04 1968-05-14 Texas Instruments Inc Semiconductor device utilizing glass and oxides as an insulator for hermetically sealing the junctions
FR1559352A (enExample) * 1967-03-27 1969-03-07
NL6906890A (enExample) * 1968-05-07 1969-11-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2203171A1 (enExample) * 1972-10-12 1974-05-10 Ncr Co
FR2286504A1 (fr) * 1974-09-24 1976-04-23 Siemens Ag Procede pour la fabrication de circuits integres

Also Published As

Publication number Publication date
NL7014024A (enExample) 1971-07-26
US3825442A (en) 1974-07-23
DE2040180A1 (de) 1971-07-29
FR2077260B1 (enExample) 1976-07-23
NL151560B (nl) 1976-11-15
DE2040180B2 (de) 1977-08-25
GB1326947A (en) 1973-08-15

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