FR2030024A6 - Alloyed junction tunnel diode - Google Patents
Alloyed junction tunnel diodeInfo
- Publication number
- FR2030024A6 FR2030024A6 FR6902205A FR6902205A FR2030024A6 FR 2030024 A6 FR2030024 A6 FR 2030024A6 FR 6902205 A FR6902205 A FR 6902205A FR 6902205 A FR6902205 A FR 6902205A FR 2030024 A6 FR2030024 A6 FR 2030024A6
- Authority
- FR
- France
- Prior art keywords
- alloy
- tunnel diode
- alloying
- substrate
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR6902205A FR2030024A6 (en) | 1967-11-08 | 1969-01-31 | Alloyed junction tunnel diode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR75127412A FR1550390A (fr) | 1967-11-08 | 1967-11-08 | |
FR6902205A FR2030024A6 (en) | 1967-11-08 | 1969-01-31 | Alloyed junction tunnel diode |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2030024A6 true FR2030024A6 (en) | 1970-10-30 |
Family
ID=33161164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6902205A Expired FR2030024A6 (en) | 1967-11-08 | 1969-01-31 | Alloyed junction tunnel diode |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2030024A6 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2513011A1 (fr) * | 1980-09-15 | 1983-03-18 | Gen Electric | Procede de fabrication de contacts a faible resistance dans des dispositifs a semi-conducteur |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1481394A (fr) * | 1965-05-26 | 1967-05-19 | Westinghouse Electric Corp | Dispositif de fixation de conducteurs à des semi-conducteurs |
-
1969
- 1969-01-31 FR FR6902205A patent/FR2030024A6/fr not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1481394A (fr) * | 1965-05-26 | 1967-05-19 | Westinghouse Electric Corp | Dispositif de fixation de conducteurs à des semi-conducteurs |
Non-Patent Citations (2)
Title |
---|
*REVUE AMERICAINE BELL LABORATOIRESRECORD VOL. 45, SEPT. 67 "LASER BEAMS AND INTEGRATED CIRCUITS" M.I. COHEN PAGES 247-251) * |
REVUE AMERICAINE PROCEED OF IEEE VOL. 51, JUIN 1963 "LASER ALLOYED TUNNEL DIODES FOR MICROWAVE APPLICATIONS" L. WANDINGER AT AL. PAGES 938-939. * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2513011A1 (fr) * | 1980-09-15 | 1983-03-18 | Gen Electric | Procede de fabrication de contacts a faible resistance dans des dispositifs a semi-conducteur |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1028782A (en) | Semiconductor light-producing device | |
SE8207034L (sv) | Fotocellsdon och sett att framstella detsamma | |
GB1291450A (en) | Method of making barrier layer devices and devices so made | |
US3703670A (en) | Electroluminescent diode configuration and method of forming the same | |
FR2030024A6 (en) | Alloyed junction tunnel diode | |
US3667117A (en) | Electroluminescent diode configuration and method of forming the same | |
JPS5745920A (en) | Forming method for semiconductor single crystal by energy beam emission | |
JPS543483A (en) | Liminous semiconductor device | |
JPS5624987A (en) | Gaas infrared ray emitting diode and manufacture thereof | |
JPS57107082A (en) | Detector for infrared ray | |
GB1133403A (en) | Deposition of metal layers on insulators | |
GB1265260A (fr) | ||
JPS5287360A (en) | Semiconductor device | |
GB1202113A (en) | Improvements in or relating to the manufacture of monocrystals of semiconductor compounds | |
JPS5329072A (en) | Gallium arsenide semiconductor device | |
JPS57100721A (en) | Manufacture of semiconductor device | |
JPS5712564A (en) | Semiconductor device | |
GB1137373A (en) | Improvements in or relating to transistors | |
AKIRA | Manufacture of compound semiconductor pn junction | |
Kachurin | Epitaxial Crystallization of GaP Films on Si by Nanosecond Laser Pulses | |
GB1096734A (en) | Improvements in semiconductor arrangements | |
JPS5674969A (en) | Photoelectric conversion device | |
JPS57178354A (en) | Semiconductor device | |
GB1079469A (en) | A method of manufacturing p-n alloy junctions | |
JPS5289079A (en) | Semiconductor hetero junction laser |