FR1262976A - Dispositifs semi-conducteurs - Google Patents

Dispositifs semi-conducteurs

Info

Publication number
FR1262976A
FR1262976A FR833559A FR833559A FR1262976A FR 1262976 A FR1262976 A FR 1262976A FR 833559 A FR833559 A FR 833559A FR 833559 A FR833559 A FR 833559A FR 1262976 A FR1262976 A FR 1262976A
Authority
FR
France
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR833559A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25263235&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FR1262976(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1262976A publication Critical patent/FR1262976A/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W74/40—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H10W72/07554—
    • H10W72/536—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
FR833559A 1959-08-11 1960-07-21 Dispositifs semi-conducteurs Expired FR1262976A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US833031A US2972092A (en) 1959-08-11 1959-08-11 Semiconductor devices

Publications (1)

Publication Number Publication Date
FR1262976A true FR1262976A (fr) 1961-06-05

Family

ID=25263235

Family Applications (1)

Application Number Title Priority Date Filing Date
FR833559A Expired FR1262976A (fr) 1959-08-11 1960-07-21 Dispositifs semi-conducteurs

Country Status (5)

Country Link
US (1) US2972092A (index.php)
DE (1) DE1151323B (index.php)
FR (1) FR1262976A (index.php)
GB (1) GB963256A (index.php)
NL (2) NL254726A (index.php)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL231410A (index.php) * 1958-09-16
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
US3196325A (en) * 1960-02-16 1965-07-20 Microwave Ass Electrode connection to mesa type semiconductor device
US3160534A (en) * 1960-10-03 1964-12-08 Gen Telephone & Elect Method of making tunnel diodes
NL270369A (index.php) * 1961-01-16
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
DE1180067C2 (de) * 1961-03-17 1970-03-12 Elektronik M B H Verfahren zum gleichzeitigen Kontaktieren mehrerer Halbleiteranordnungen
US3249829A (en) * 1962-05-18 1966-05-03 Transitron Electronic Corp Encapsulated diode assembly
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
US3357090A (en) * 1963-05-23 1967-12-12 Transitron Electronic Corp Vibratory welding tip and method of welding
GB1053069A (index.php) * 1963-06-28
GB1070288A (en) * 1963-07-08 1967-06-01 Rca Corp Semiconductor devices
DE1250004B (index.php) * 1963-08-19
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3331995A (en) * 1964-02-25 1967-07-18 Hughes Aircraft Co Housed semiconductor device with thermally matched elements
US3331125A (en) * 1964-05-28 1967-07-18 Rca Corp Semiconductor device fabrication
DE1564530B1 (de) * 1965-06-09 1971-05-06 Rca Corp Verfahren zur herstellung von gleichrichtersaeulen
US3424954A (en) * 1966-09-21 1969-01-28 Bell Telephone Labor Inc Silicon oxide tunnel diode structure and method of making same
US3350293A (en) * 1966-11-14 1967-10-31 Components Inc Passivating silicon semiconductor devices with sputtered tungsten oxide at low temperatures
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3496428A (en) * 1968-04-11 1970-02-17 Itt Diffusion barrier for semiconductor contacts
US3670218A (en) * 1971-08-02 1972-06-13 North American Rockwell Monolithic heteroepitaxial microwave tunnel die

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
FR1075030A (fr) * 1953-02-25 1954-10-12 Csf Perfectionnements aux redresseurs à semi-conducteurs
US2781480A (en) * 1953-07-31 1957-02-12 Rca Corp Semiconductor rectifiers
DE1078194B (de) * 1957-09-27 1960-03-24 Siemens Ag Elektrisches Bauelement mit dicht nebeneinanderliegenden Kontaktanschluessen
US2890395A (en) * 1957-10-31 1959-06-09 Jay W Lathrop Semiconductor construction
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
DE1805708U (de) * 1959-05-21 1960-02-11 Telefunken Gmbh Halbleiteranordnung.

Also Published As

Publication number Publication date
GB963256A (en) 1964-07-08
DE1151323B (de) 1963-07-11
NL254726A (index.php)
US2972092A (en) 1961-02-14
NL131156C (index.php)

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