NL131156C - - Google Patents

Info

Publication number
NL131156C
NL131156C NL131156DA NL131156C NL 131156 C NL131156 C NL 131156C NL 131156D A NL131156D A NL 131156DA NL 131156 C NL131156 C NL 131156C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Family has litigation
Publication of NL131156C publication Critical patent/NL131156C/xx
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25263235&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NL131156(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
NL131156D 1959-08-11 NL131156C (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US833031A US2972092A (en) 1959-08-11 1959-08-11 Semiconductor devices

Publications (1)

Publication Number Publication Date
NL131156C true NL131156C (xx)

Family

ID=25263235

Family Applications (2)

Application Number Title Priority Date Filing Date
NL131156D NL131156C (xx) 1959-08-11
NL254726D NL254726A (xx) 1959-08-11

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL254726D NL254726A (xx) 1959-08-11

Country Status (5)

Country Link
US (1) US2972092A (xx)
DE (1) DE1151323B (xx)
FR (1) FR1262976A (xx)
GB (1) GB963256A (xx)
NL (2) NL254726A (xx)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL231410A (xx) * 1958-09-16
US3197839A (en) * 1959-12-11 1965-08-03 Gen Electric Method of fabricating semiconductor devices
US3196325A (en) * 1960-02-16 1965-07-20 Microwave Ass Electrode connection to mesa type semiconductor device
US3160534A (en) * 1960-10-03 1964-12-08 Gen Telephone & Elect Method of making tunnel diodes
NL270369A (xx) * 1961-01-16
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
DE1180067C2 (de) * 1961-03-17 1970-03-12 Elektronik M B H Verfahren zum gleichzeitigen Kontaktieren mehrerer Halbleiteranordnungen
US3249829A (en) * 1962-05-18 1966-05-03 Transitron Electronic Corp Encapsulated diode assembly
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
US3357090A (en) * 1963-05-23 1967-12-12 Transitron Electronic Corp Vibratory welding tip and method of welding
GB1053069A (xx) * 1963-06-28
GB1070288A (en) * 1963-07-08 1967-06-01 Rca Corp Semiconductor devices
GB1053105A (xx) * 1963-08-19
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3331995A (en) * 1964-02-25 1967-07-18 Hughes Aircraft Co Housed semiconductor device with thermally matched elements
US3331125A (en) * 1964-05-28 1967-07-18 Rca Corp Semiconductor device fabrication
DE1564530B1 (de) * 1965-06-09 1971-05-06 Rca Corp Verfahren zur herstellung von gleichrichtersaeulen
US3424954A (en) * 1966-09-21 1969-01-28 Bell Telephone Labor Inc Silicon oxide tunnel diode structure and method of making same
US3350293A (en) * 1966-11-14 1967-10-31 Components Inc Passivating silicon semiconductor devices with sputtered tungsten oxide at low temperatures
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
US3496428A (en) * 1968-04-11 1970-02-17 Itt Diffusion barrier for semiconductor contacts
US3670218A (en) * 1971-08-02 1972-06-13 North American Rockwell Monolithic heteroepitaxial microwave tunnel die

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
FR1075030A (fr) * 1953-02-25 1954-10-12 Csf Perfectionnements aux redresseurs à semi-conducteurs
US2781480A (en) * 1953-07-31 1957-02-12 Rca Corp Semiconductor rectifiers
DE1078194B (de) * 1957-09-27 1960-03-24 Siemens Ag Elektrisches Bauelement mit dicht nebeneinanderliegenden Kontaktanschluessen
US2890395A (en) * 1957-10-31 1959-06-09 Jay W Lathrop Semiconductor construction
US2911539A (en) * 1957-12-18 1959-11-03 Bell Telephone Labor Inc Photocell array
DE1805708U (de) * 1959-05-21 1960-02-11 Telefunken Gmbh Halbleiteranordnung.

Also Published As

Publication number Publication date
DE1151323B (de) 1963-07-11
US2972092A (en) 1961-02-14
FR1262976A (fr) 1961-06-05
NL254726A (xx)
GB963256A (en) 1964-07-08

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