FR1193425A - Dispositif semi-conducteur à frontière de grains - Google Patents

Dispositif semi-conducteur à frontière de grains

Info

Publication number
FR1193425A
FR1193425A FR1193425DA FR1193425A FR 1193425 A FR1193425 A FR 1193425A FR 1193425D A FR1193425D A FR 1193425DA FR 1193425 A FR1193425 A FR 1193425A
Authority
FR
France
Prior art keywords
semiconductor device
grain boundary
grain
boundary
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
Other languages
English (en)
Inventor
William Shockley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1193425A publication Critical patent/FR1193425A/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/922—Diffusion along grain boundaries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1193425D 1957-03-18 1958-03-18 Dispositif semi-conducteur à frontière de grains Expired - Lifetime FR1193425A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US646728A US2954307A (en) 1957-03-18 1957-03-18 Grain boundary semiconductor device and method

Publications (1)

Publication Number Publication Date
FR1193425A true FR1193425A (fr) 1959-11-03

Family

ID=24594224

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1193425D Expired - Lifetime FR1193425A (fr) 1957-03-18 1958-03-18 Dispositif semi-conducteur à frontière de grains

Country Status (4)

Country Link
US (1) US2954307A (fr)
DE (1) DE1076275B (fr)
FR (1) FR1193425A (fr)
GB (1) GB847705A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1100177B (de) * 1959-12-08 1961-02-23 Sueddeutsche Telefon App Kabel Halbleiterdiode mit veraenderlicher Kapazitaet fuer parametrische Verstaerker
DE1130932B (de) * 1959-05-29 1962-06-07 Shockley Transistor Corp Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren
US3105177A (en) * 1959-11-23 1963-09-24 Bell Telephone Labor Inc Semiconductive device utilizing quantum-mechanical tunneling

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3103455A (en) * 1963-09-10 N-type
US3180766A (en) * 1958-12-30 1965-04-27 Raytheon Co Heavily doped base rings
NL249774A (fr) * 1959-03-26
US3146135A (en) * 1959-05-11 1964-08-25 Clevite Corp Four layer semiconductive device
NL135881C (fr) * 1959-08-05
US3117260A (en) * 1959-09-11 1964-01-07 Fairchild Camera Instr Co Semiconductor circuit complexes
US3126505A (en) * 1959-11-18 1964-03-24 Field effect transistor having grain boundary therein
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions
NL262176A (fr) * 1960-03-11 1900-01-01
US3189798A (en) * 1960-11-29 1965-06-15 Westinghouse Electric Corp Monolithic semiconductor device and method of preparing same
US3242395A (en) * 1961-01-12 1966-03-22 Philco Corp Semiconductor device having low capacitance junction
BE636317A (fr) * 1962-08-23 1900-01-01
US3307984A (en) * 1962-12-07 1967-03-07 Trw Semiconductors Inc Method of forming diode with high resistance substrate
US3473979A (en) * 1963-01-29 1969-10-21 Motorola Inc Semiconductor device
US3575644A (en) * 1963-01-30 1971-04-20 Gen Electric Semiconductor device with double positive bevel
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure
US3254280A (en) * 1963-05-29 1966-05-31 Westinghouse Electric Corp Silicon carbide unipolar transistor
US3332810A (en) * 1963-09-28 1967-07-25 Matsushita Electronics Corp Silicon rectifier device
US3274462A (en) * 1963-11-13 1966-09-20 Jr Keats A Pullen Structural configuration for fieldeffect and junction transistors
US3430113A (en) * 1965-10-04 1969-02-25 Us Air Force Current modulated field effect transistor
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon
US3593069A (en) * 1969-10-08 1971-07-13 Nat Semiconductor Corp Integrated circuit resistor and method of making the same
JPS5134268B2 (fr) * 1972-07-13 1976-09-25

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2362545A (en) * 1942-01-29 1944-11-14 Bell Telephone Labor Inc Selenium rectifier and method of making it
DE935382C (de) * 1949-10-06 1955-11-17 Standard Elek Zitaets Ges Ag Spitzengleichrichter hoher Stabilitaet und Leistung
BE500302A (fr) * 1949-11-30
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
US2795742A (en) * 1952-12-12 1957-06-11 Bell Telephone Labor Inc Semiconductive translating devices utilizing selected natural grain boundaries

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130932B (de) * 1959-05-29 1962-06-07 Shockley Transistor Corp Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren
US3105177A (en) * 1959-11-23 1963-09-24 Bell Telephone Labor Inc Semiconductive device utilizing quantum-mechanical tunneling
DE1100177B (de) * 1959-12-08 1961-02-23 Sueddeutsche Telefon App Kabel Halbleiterdiode mit veraenderlicher Kapazitaet fuer parametrische Verstaerker

Also Published As

Publication number Publication date
DE1076275B (de) 1960-02-25
GB847705A (en) 1960-09-14
US2954307A (en) 1960-09-27

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