FR1179252A - Orientation cristallographique du germanium - Google Patents

Orientation cristallographique du germanium

Info

Publication number
FR1179252A
FR1179252A FR1179252DA FR1179252A FR 1179252 A FR1179252 A FR 1179252A FR 1179252D A FR1179252D A FR 1179252DA FR 1179252 A FR1179252 A FR 1179252A
Authority
FR
France
Prior art keywords
germanium
crystallographic orientation
crystallographic
orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1179252A publication Critical patent/FR1179252A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR1179252D 1955-12-30 1956-12-27 Orientation cristallographique du germanium Expired FR1179252A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US556642A US2858730A (en) 1955-12-30 1955-12-30 Germanium crystallographic orientation

Publications (1)

Publication Number Publication Date
FR1179252A true FR1179252A (fr) 1959-05-22

Family

ID=24222209

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1179252D Expired FR1179252A (fr) 1955-12-30 1956-12-27 Orientation cristallographique du germanium

Country Status (5)

Country Link
US (1) US2858730A (de)
DE (1) DE1165163B (de)
FR (1) FR1179252A (de)
GB (1) GB846915A (de)
NL (2) NL213347A (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984549A (en) * 1957-06-21 1961-05-16 Clevite Corp Semiconductor product and method
US2971869A (en) * 1957-08-27 1961-02-14 Motorola Inc Semiconductor assembly and method of forming same
US2988433A (en) * 1957-12-31 1961-06-13 Ibm Method of forming crystals
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
GB852003A (en) * 1958-06-10 1960-10-19 Siemens Edison Swan Ltd Improvements relating to the production of wafers of semi-conductor material
DE1114649B (de) * 1960-03-17 1961-10-05 Zeiss Carl Fa Optisches Geraet zur Orientierung von Einkristallen nach der Kristallachse
US3172791A (en) * 1960-03-31 1965-03-09 Crystallography orientation of a cy- lindrical rod of semiconductor mate- rial in a vapor deposition process to obtain a polygonal shaped rod
US3143447A (en) * 1960-12-22 1964-08-04 Marriner K Norr Chemical etches for lead telluride crystals
US3247576A (en) * 1962-10-30 1966-04-26 Ibm Method of fabrication of crystalline shapes
US3244488A (en) * 1963-06-06 1966-04-05 Perkin Elmer Corp Plural directional growing of crystals
US3793712A (en) * 1965-02-26 1974-02-26 Texas Instruments Inc Method of forming circuit components within a substrate
FR96065E (fr) * 1967-11-01 1972-05-19 Western Electric Co Procédé de gravure précise de semiconducteurs.
US3634737A (en) * 1969-02-07 1972-01-11 Tokyo Shibaura Electric Co Semiconductor device
US3603848A (en) * 1969-02-27 1971-09-07 Tokyo Shibaura Electric Co Complementary field-effect-type semiconductor device
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
US3731861A (en) * 1971-10-28 1973-05-08 Rca Corp Method for dicing materials having a hexagonal crystal structure
US3782836A (en) * 1971-11-11 1974-01-01 Texas Instruments Inc Surface irregularity analyzing method
US3834265A (en) * 1973-02-16 1974-09-10 Gillette Co Ceramic cutting instruments
US4084354A (en) * 1977-06-03 1978-04-18 International Business Machines Corporation Process for slicing boules of single crystal material
DE3109229C2 (de) * 1981-03-11 1985-05-02 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Kristalline Germaniummodifikation und Verfahren zu ihrer Herstellung
US4490441A (en) * 1982-07-06 1984-12-25 Honeywell Inc. Encapsulated CDTe boules for multiblade wafering
US4564494A (en) * 1982-07-06 1986-01-14 Honeywell Inc. Encapsulant of CdTe boules for multiblade wafering
US4697489A (en) * 1984-07-05 1987-10-06 Kim George A Ultramicrotome tool
US4643161A (en) * 1984-07-05 1987-02-17 Kim George A Method of machining hard and brittle material
US4581969A (en) * 1984-07-05 1986-04-15 Kim George A Ultramicrotome diamond knife
US4759130A (en) * 1985-11-12 1988-07-26 U.S. Philips Corporation Goniometer head arrangement
US4667650A (en) * 1985-11-21 1987-05-26 Pq Corporation Mounting beam for preparing wafers
US4773951A (en) * 1986-01-07 1988-09-27 Atlantic Richfield Company Method of manufacturing wafers of semiconductor material
US4884887A (en) * 1987-01-23 1989-12-05 Hewlett-Packard Company Method for positioning a crystal ingot
DE69631353T2 (de) * 1995-04-22 2004-12-09 Hct Shaping Systems Sa Verfahren zur Orientierung von Einkristallen zum Schneiden in eine Schneidemaschine und Einrichtung zur Durchführung des Verfahrens
US5769941A (en) * 1996-05-01 1998-06-23 Motorola, Inc. Method of forming semiconductor material
CN102528951A (zh) * 2010-12-28 2012-07-04 湖北泰晶电子科技有限公司 一种取石英晶体籽晶片的方法
CN113232176B (zh) * 2021-05-06 2022-07-12 西安交通大学 用于不同晶体取向铸造单晶高温合金的籽晶切割装置及方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2423357A (en) * 1942-01-13 1947-07-01 Gen Electric Method of determining the optical axes of quartz crystals

Also Published As

Publication number Publication date
NL105904C (de)
GB846915A (en) 1960-09-07
US2858730A (en) 1958-11-04
NL213347A (de)
DE1165163B (de) 1964-03-12

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