GB846915A - Improvements in methods of producing germanium crystalline bodies - Google Patents

Improvements in methods of producing germanium crystalline bodies

Info

Publication number
GB846915A
GB846915A GB39533/56A GB3953356A GB846915A GB 846915 A GB846915 A GB 846915A GB 39533/56 A GB39533/56 A GB 39533/56A GB 3953356 A GB3953356 A GB 3953356A GB 846915 A GB846915 A GB 846915A
Authority
GB
United Kingdom
Prior art keywords
crystal
methods
cut
crystalline bodies
producing germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39533/56A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB846915A publication Critical patent/GB846915A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
GB39533/56A 1955-12-30 1956-12-28 Improvements in methods of producing germanium crystalline bodies Expired GB846915A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US556642A US2858730A (en) 1955-12-30 1955-12-30 Germanium crystallographic orientation

Publications (1)

Publication Number Publication Date
GB846915A true GB846915A (en) 1960-09-07

Family

ID=24222209

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39533/56A Expired GB846915A (en) 1955-12-30 1956-12-28 Improvements in methods of producing germanium crystalline bodies

Country Status (5)

Country Link
US (1) US2858730A (de)
DE (1) DE1165163B (de)
FR (1) FR1179252A (de)
GB (1) GB846915A (de)
NL (2) NL213347A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113232176A (zh) * 2021-05-06 2021-08-10 西安交通大学 用于不同晶体取向铸造单晶高温合金的籽晶切割装置及方法

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984549A (en) * 1957-06-21 1961-05-16 Clevite Corp Semiconductor product and method
US2971869A (en) * 1957-08-27 1961-02-14 Motorola Inc Semiconductor assembly and method of forming same
US2988433A (en) * 1957-12-31 1961-06-13 Ibm Method of forming crystals
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
GB852003A (en) * 1958-06-10 1960-10-19 Siemens Edison Swan Ltd Improvements relating to the production of wafers of semi-conductor material
DE1114649B (de) * 1960-03-17 1961-10-05 Zeiss Carl Fa Optisches Geraet zur Orientierung von Einkristallen nach der Kristallachse
NL263037A (de) * 1960-03-31
US3143447A (en) * 1960-12-22 1964-08-04 Marriner K Norr Chemical etches for lead telluride crystals
US3247576A (en) * 1962-10-30 1966-04-26 Ibm Method of fabrication of crystalline shapes
US3244488A (en) * 1963-06-06 1966-04-05 Perkin Elmer Corp Plural directional growing of crystals
US3793712A (en) * 1965-02-26 1974-02-26 Texas Instruments Inc Method of forming circuit components within a substrate
FR96065E (fr) * 1967-11-01 1972-05-19 Western Electric Co Procédé de gravure précise de semiconducteurs.
US3634737A (en) * 1969-02-07 1972-01-11 Tokyo Shibaura Electric Co Semiconductor device
US3603848A (en) * 1969-02-27 1971-09-07 Tokyo Shibaura Electric Co Complementary field-effect-type semiconductor device
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
US3731861A (en) * 1971-10-28 1973-05-08 Rca Corp Method for dicing materials having a hexagonal crystal structure
US3782836A (en) * 1971-11-11 1974-01-01 Texas Instruments Inc Surface irregularity analyzing method
US3834265A (en) * 1973-02-16 1974-09-10 Gillette Co Ceramic cutting instruments
US4084354A (en) * 1977-06-03 1978-04-18 International Business Machines Corporation Process for slicing boules of single crystal material
DE3109229C2 (de) * 1981-03-11 1985-05-02 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Kristalline Germaniummodifikation und Verfahren zu ihrer Herstellung
US4564494A (en) * 1982-07-06 1986-01-14 Honeywell Inc. Encapsulant of CdTe boules for multiblade wafering
US4490441A (en) * 1982-07-06 1984-12-25 Honeywell Inc. Encapsulated CDTe boules for multiblade wafering
US4581969A (en) * 1984-07-05 1986-04-15 Kim George A Ultramicrotome diamond knife
US4697489A (en) * 1984-07-05 1987-10-06 Kim George A Ultramicrotome tool
US4643161A (en) * 1984-07-05 1987-02-17 Kim George A Method of machining hard and brittle material
US4759130A (en) * 1985-11-12 1988-07-26 U.S. Philips Corporation Goniometer head arrangement
US4667650A (en) * 1985-11-21 1987-05-26 Pq Corporation Mounting beam for preparing wafers
US4773951A (en) * 1986-01-07 1988-09-27 Atlantic Richfield Company Method of manufacturing wafers of semiconductor material
US4884887A (en) * 1987-01-23 1989-12-05 Hewlett-Packard Company Method for positioning a crystal ingot
EP0738572B1 (de) * 1995-04-22 2004-01-21 HCT Shaping Systems SA Verfahren zur Orientierung von Einkristallen zum Schneiden in eine Schneidemaschine und Einrichtung zur Durchführung des Verfahrens
US5769941A (en) * 1996-05-01 1998-06-23 Motorola, Inc. Method of forming semiconductor material
CN102528951A (zh) * 2010-12-28 2012-07-04 湖北泰晶电子科技有限公司 一种取石英晶体籽晶片的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2423357A (en) * 1942-01-13 1947-07-01 Gen Electric Method of determining the optical axes of quartz crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113232176A (zh) * 2021-05-06 2021-08-10 西安交通大学 用于不同晶体取向铸造单晶高温合金的籽晶切割装置及方法

Also Published As

Publication number Publication date
US2858730A (en) 1958-11-04
FR1179252A (fr) 1959-05-22
NL213347A (de)
DE1165163B (de) 1964-03-12
NL105904C (de)

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