FR1064045A - Procédé pour l'obtention de couches semi-conductrices - Google Patents
Procédé pour l'obtention de couches semi-conductricesInfo
- Publication number
- FR1064045A FR1064045A FR1064045DA FR1064045A FR 1064045 A FR1064045 A FR 1064045A FR 1064045D A FR1064045D A FR 1064045DA FR 1064045 A FR1064045 A FR 1064045A
- Authority
- FR
- France
- Prior art keywords
- germanium
- layers
- semi
- crucible
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052732 germanium Inorganic materials 0.000 abstract 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005259 measurement Methods 0.000 abstract 2
- 239000010445 mica Substances 0.000 abstract 2
- 229910052618 mica group Inorganic materials 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910005936 Ge—Sb Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE307775X | 1952-01-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1064045A true FR1064045A (fr) | 1954-05-10 |
Family
ID=20307566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1064045D Expired FR1064045A (fr) | 1952-01-22 | 1952-10-02 | Procédé pour l'obtention de couches semi-conductrices |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE514927A (enrdf_load_stackoverflow) |
| CH (1) | CH307775A (enrdf_load_stackoverflow) |
| FR (1) | FR1064045A (enrdf_load_stackoverflow) |
| GB (1) | GB732797A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1098316B (de) * | 1957-06-26 | 1961-01-26 | Union Carbide Corp | Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum |
| DE1227433B (de) * | 1955-07-28 | 1966-10-27 | Siemens Ag | Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten |
| DE1237076B (de) * | 1962-06-19 | 1967-03-23 | Western Electric Co | Verfahren zum Herstellen eines epitaxial aufgewachsenen Siliciumfilms auf einer Halbleiterunterlage |
| DE1262979B (de) * | 1961-03-14 | 1968-03-14 | Siemens Ag | Verfahren und Vorrichtung zum Herstellen einkristalliner Schichten durch Aufdampfen |
| DE1298833B (de) * | 1962-04-13 | 1969-07-03 | Air Reduction | Vorrichtung zum Vakuumaufdampfen einer Vielzahl von festhaftenden Schichten bestimmter Dicke aus verschiedenen Materialien auf eine Unterlage mittels Elektronenbeschuss |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE548791A (enrdf_load_stackoverflow) * | 1955-06-20 | |||
| US2963390A (en) * | 1955-09-26 | 1960-12-06 | Hoffman Electronics Corp | Method of making a photosensitive semi-conductor device |
| DE1058634B (de) * | 1956-06-07 | 1959-06-04 | Ibm Deutschland | Gasdiffusionsverfahren zur Herstellung eines Transistors |
| US2964435A (en) * | 1957-03-27 | 1960-12-13 | Mc Graw Edison Co | Semiconductor devices and their manufacture |
| DE1071177B (enrdf_load_stackoverflow) * | 1958-01-17 | |||
| US3034924A (en) * | 1958-10-30 | 1962-05-15 | Balzers Patent Beteilig Ag | Use of a rare earth metal in vaporizing metals and metal oxides |
| US3036933A (en) * | 1959-10-06 | 1962-05-29 | Ibm | Vacuum evaporation method |
| US3063871A (en) * | 1959-10-23 | 1962-11-13 | Merck & Co Inc | Production of semiconductor films |
| US3206322A (en) * | 1960-10-31 | 1965-09-14 | Morgan John Robert | Vacuum deposition means and methods for manufacture of electronic components |
| US3172778A (en) * | 1961-01-03 | 1965-03-09 | Method for producing thin semi- conducting layers of semicon- ductor compounds |
-
0
- BE BE514927D patent/BE514927A/xx unknown
-
1952
- 1952-09-26 CH CH307775D patent/CH307775A/de unknown
- 1952-09-29 GB GB24374/52A patent/GB732797A/en not_active Expired
- 1952-10-02 FR FR1064045D patent/FR1064045A/fr not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1227433B (de) * | 1955-07-28 | 1966-10-27 | Siemens Ag | Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten |
| DE1098316B (de) * | 1957-06-26 | 1961-01-26 | Union Carbide Corp | Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum |
| DE1262979B (de) * | 1961-03-14 | 1968-03-14 | Siemens Ag | Verfahren und Vorrichtung zum Herstellen einkristalliner Schichten durch Aufdampfen |
| DE1298833B (de) * | 1962-04-13 | 1969-07-03 | Air Reduction | Vorrichtung zum Vakuumaufdampfen einer Vielzahl von festhaftenden Schichten bestimmter Dicke aus verschiedenen Materialien auf eine Unterlage mittels Elektronenbeschuss |
| DE1237076B (de) * | 1962-06-19 | 1967-03-23 | Western Electric Co | Verfahren zum Herstellen eines epitaxial aufgewachsenen Siliciumfilms auf einer Halbleiterunterlage |
Also Published As
| Publication number | Publication date |
|---|---|
| GB732797A (en) | 1955-06-29 |
| CH307775A (de) | 1955-06-15 |
| BE514927A (enrdf_load_stackoverflow) |
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