CH307775A - Verfahren zur Herstellung halbleitender, kristallinischer Schichten. - Google Patents

Verfahren zur Herstellung halbleitender, kristallinischer Schichten.

Info

Publication number
CH307775A
CH307775A CH307775DA CH307775A CH 307775 A CH307775 A CH 307775A CH 307775D A CH307775D A CH 307775DA CH 307775 A CH307775 A CH 307775A
Authority
CH
Switzerland
Prior art keywords
semiconducting
production
crystalline layers
crystalline
layers
Prior art date
Application number
Other languages
English (en)
Inventor
Telefonaktiebolaget L Ericsson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of CH307775A publication Critical patent/CH307775A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CH307775D 1952-01-22 1952-09-26 Verfahren zur Herstellung halbleitender, kristallinischer Schichten. CH307775A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE307775X 1952-01-22

Publications (1)

Publication Number Publication Date
CH307775A true CH307775A (de) 1955-06-15

Family

ID=20307566

Family Applications (1)

Application Number Title Priority Date Filing Date
CH307775D CH307775A (de) 1952-01-22 1952-09-26 Verfahren zur Herstellung halbleitender, kristallinischer Schichten.

Country Status (4)

Country Link
BE (1) BE514927A (de)
CH (1) CH307775A (de)
FR (1) FR1064045A (de)
GB (1) GB732797A (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1058634B (de) * 1956-06-07 1959-06-04 Ibm Deutschland Gasdiffusionsverfahren zur Herstellung eines Transistors
US3034924A (en) * 1958-10-30 1962-05-15 Balzers Patent Beteilig Ag Use of a rare earth metal in vaporizing metals and metal oxides
US3036933A (en) * 1959-10-06 1962-05-29 Ibm Vacuum evaporation method
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3071495A (en) * 1958-01-17 1963-01-01 Siemens Ag Method of manufacturing a peltier thermopile
US3172778A (en) * 1961-01-03 1965-03-09 Method for producing thin semi- conducting layers of semicon- ductor compounds
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548791A (de) * 1955-06-20
DE1227433B (de) * 1955-07-28 1966-10-27 Siemens Ag Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum
NL275889A (de) * 1961-03-14
NL291466A (de) * 1962-04-13
DE1237076B (de) * 1962-06-19 1967-03-23 Western Electric Co Verfahren zum Herstellen eines epitaxial aufgewachsenen Siliciumfilms auf einer Halbleiterunterlage

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1058634B (de) * 1956-06-07 1959-06-04 Ibm Deutschland Gasdiffusionsverfahren zur Herstellung eines Transistors
US3071495A (en) * 1958-01-17 1963-01-01 Siemens Ag Method of manufacturing a peltier thermopile
US3034924A (en) * 1958-10-30 1962-05-15 Balzers Patent Beteilig Ag Use of a rare earth metal in vaporizing metals and metal oxides
US3036933A (en) * 1959-10-06 1962-05-29 Ibm Vacuum evaporation method
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
US3172778A (en) * 1961-01-03 1965-03-09 Method for producing thin semi- conducting layers of semicon- ductor compounds

Also Published As

Publication number Publication date
FR1064045A (fr) 1954-05-10
BE514927A (de)
GB732797A (en) 1955-06-29

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