FI971890A - Kuormitusmonitorointi radiotaajuustehotransistoreille - Google Patents
Kuormitusmonitorointi radiotaajuustehotransistoreille Download PDFInfo
- Publication number
- FI971890A FI971890A FI971890A FI971890A FI971890A FI 971890 A FI971890 A FI 971890A FI 971890 A FI971890 A FI 971890A FI 971890 A FI971890 A FI 971890A FI 971890 A FI971890 A FI 971890A
- Authority
- FI
- Finland
- Prior art keywords
- bellast
- monitoring
- radio frequency
- frequency power
- power transistor
- Prior art date
Links
- 238000012544 monitoring process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33541394A | 1994-11-03 | 1994-11-03 | |
| PCT/SE1995/001294 WO1996014665A1 (en) | 1994-11-03 | 1995-11-01 | Ballast monitoring for radio frequency power transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI971890A0 FI971890A0 (fi) | 1997-05-02 |
| FI971890A true FI971890A (fi) | 1997-07-02 |
Family
ID=23311672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI971890A FI971890A (fi) | 1994-11-03 | 1997-05-02 | Kuormitusmonitorointi radiotaajuustehotransistoreille |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5907180A (ja) |
| EP (1) | EP0789934B1 (ja) |
| JP (1) | JPH10508721A (ja) |
| KR (1) | KR100301099B1 (ja) |
| CN (1) | CN1087502C (ja) |
| AU (1) | AU3885095A (ja) |
| CA (1) | CA2204382A1 (ja) |
| DE (1) | DE69528280T2 (ja) |
| FI (1) | FI971890A (ja) |
| HK (1) | HK1008265A1 (ja) |
| WO (1) | WO1996014665A1 (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804867A (en) * | 1996-10-02 | 1998-09-08 | Ericsson Inc. | Thermally balanced radio frequency power transistor |
| US6483188B1 (en) * | 2000-05-15 | 2002-11-19 | Atheros Communications, Inc. | Rf integrated circuit layout |
| JP2003045882A (ja) * | 2001-07-27 | 2003-02-14 | Nec Corp | 半導体装置及びその設計方法 |
| FR2832548B1 (fr) * | 2001-11-16 | 2004-01-02 | United Monolithic Semiconduct | Transistor hyperfrequence de puissance |
| EP1517437A1 (de) * | 2003-09-19 | 2005-03-23 | Siemens Aktiengesellschaft | HF-Leistungsverstärker mit Betriebsstrommesseinrichtung |
| US7079004B2 (en) * | 2003-10-10 | 2006-07-18 | Agilent Technologies, Inc. | Precision thin film AC voltage divider |
| US7038327B2 (en) * | 2003-11-11 | 2006-05-02 | Au Optronics Corp. | Anisotropic conductive film bonding pad |
| JP2005217997A (ja) * | 2004-02-02 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 高周波増幅器 |
| TWI243386B (en) * | 2004-02-26 | 2005-11-11 | Au Optronics Corp | Anisotropic conductive film pad |
| DE102004014731B4 (de) | 2004-03-25 | 2007-05-03 | Infineon Technologies Ag | Mess-Schaltung für den Ausgang eines Leistungsverstärkers sowie ein die Mess-Schaltung umfassender Leistungsverstärker |
| JP5004654B2 (ja) * | 2007-05-16 | 2012-08-22 | パナソニック株式会社 | 配線基板の接続方法および配線基板構造 |
| US8563336B2 (en) | 2008-12-23 | 2013-10-22 | International Business Machines Corporation | Method for forming thin film resistor and terminal bond pad simultaneously |
| US9520742B2 (en) | 2014-07-03 | 2016-12-13 | Hubbell Incorporated | Monitoring system and method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3896475A (en) * | 1972-01-28 | 1975-07-22 | Philips Corp | Semiconductor device comprising resistance region having portions lateral to conductors |
| IT1038800B (it) * | 1975-06-10 | 1979-11-30 | Ates Componenti Elettron | Tranistore planare di potenza |
| US4656496A (en) * | 1985-02-04 | 1987-04-07 | National Semiconductor Corporation | Power transistor emitter ballasting |
| FR2615326B1 (fr) * | 1987-05-15 | 1990-08-31 | Fuji Electric Co Ltd | Dispositif a semi-conducteurs du type multi-emetteur |
| US5298785A (en) * | 1987-05-15 | 1994-03-29 | Fuji Electric Co., Ltd. | Semiconductor device |
| US5204735A (en) * | 1988-04-21 | 1993-04-20 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same |
| US5061863A (en) * | 1989-05-16 | 1991-10-29 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor provided with a current detecting function |
| US5023693A (en) * | 1989-06-06 | 1991-06-11 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Transistor with current sensing function |
| JPH07109831B2 (ja) * | 1990-01-25 | 1995-11-22 | 株式会社東芝 | 半導体装置 |
| US5387813A (en) * | 1992-09-25 | 1995-02-07 | National Semiconductor Corporation | Transistors with emitters having at least three sides |
-
1995
- 1995-11-01 JP JP8515243A patent/JPH10508721A/ja not_active Abandoned
- 1995-11-01 WO PCT/SE1995/001294 patent/WO1996014665A1/en active IP Right Grant
- 1995-11-01 KR KR1019970702876A patent/KR100301099B1/ko not_active IP Right Cessation
- 1995-11-01 CA CA002204382A patent/CA2204382A1/en not_active Abandoned
- 1995-11-01 CN CN95196996A patent/CN1087502C/zh not_active Expired - Fee Related
- 1995-11-01 AU AU38850/95A patent/AU3885095A/en not_active Abandoned
- 1995-11-01 EP EP95938089A patent/EP0789934B1/en not_active Expired - Lifetime
- 1995-11-01 DE DE69528280T patent/DE69528280T2/de not_active Expired - Fee Related
-
1997
- 1997-01-22 US US08/787,821 patent/US5907180A/en not_active Expired - Fee Related
- 1997-05-02 FI FI971890A patent/FI971890A/fi not_active IP Right Cessation
-
1998
- 1998-07-17 HK HK98109244A patent/HK1008265A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US5907180A (en) | 1999-05-25 |
| EP0789934A1 (en) | 1997-08-20 |
| AU3885095A (en) | 1996-05-31 |
| WO1996014665A1 (en) | 1996-05-17 |
| CN1171168A (zh) | 1998-01-21 |
| EP0789934B1 (en) | 2002-09-18 |
| KR100301099B1 (ko) | 2001-11-22 |
| DE69528280T2 (de) | 2003-05-22 |
| DE69528280D1 (de) | 2002-10-24 |
| CN1087502C (zh) | 2002-07-10 |
| HK1008265A1 (en) | 1999-05-07 |
| FI971890A0 (fi) | 1997-05-02 |
| CA2204382A1 (en) | 1996-05-17 |
| JPH10508721A (ja) | 1998-08-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MA | Patent expired |