DE69710615D1 - Gleichmässiger ballastwiderstand für einen thermisch ausgeglichenen radiofrequenz-leistungstransistor - Google Patents

Gleichmässiger ballastwiderstand für einen thermisch ausgeglichenen radiofrequenz-leistungstransistor

Info

Publication number
DE69710615D1
DE69710615D1 DE69710615T DE69710615T DE69710615D1 DE 69710615 D1 DE69710615 D1 DE 69710615D1 DE 69710615 T DE69710615 T DE 69710615T DE 69710615 T DE69710615 T DE 69710615T DE 69710615 D1 DE69710615 D1 DE 69710615D1
Authority
DE
Germany
Prior art keywords
radio frequency
frequency power
power transistor
ballast resistance
thermally balanced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69710615T
Other languages
English (en)
Other versions
DE69710615T2 (de
Inventor
Larry Leighton
Ted Johansson
Bertil Skoglund
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Ericsson Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Inc filed Critical Ericsson Inc
Publication of DE69710615D1 publication Critical patent/DE69710615D1/de
Application granted granted Critical
Publication of DE69710615T2 publication Critical patent/DE69710615T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69710615T 1996-10-02 1997-09-15 Gleichmässiger ballastwiderstand für einen thermisch ausgeglichenen radiofrequenz-leistungstransistor Expired - Fee Related DE69710615T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/720,574 US5804867A (en) 1996-10-02 1996-10-02 Thermally balanced radio frequency power transistor
PCT/US1997/016311 WO1998015009A1 (en) 1996-10-02 1997-09-15 Uniform ballast resistance for a thermally balanced radio frequency power transistor

Publications (2)

Publication Number Publication Date
DE69710615D1 true DE69710615D1 (de) 2002-03-28
DE69710615T2 DE69710615T2 (de) 2002-10-17

Family

ID=24894499

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69710615T Expired - Fee Related DE69710615T2 (de) 1996-10-02 1997-09-15 Gleichmässiger ballastwiderstand für einen thermisch ausgeglichenen radiofrequenz-leistungstransistor

Country Status (11)

Country Link
US (1) US5804867A (de)
EP (1) EP0950265B1 (de)
JP (1) JP2002501670A (de)
KR (1) KR100331493B1 (de)
CN (1) CN1239590A (de)
AU (1) AU4481297A (de)
CA (1) CA2267298A1 (de)
DE (1) DE69710615T2 (de)
ES (1) ES2168675T3 (de)
TW (1) TW373332B (de)
WO (1) WO1998015009A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE521385C2 (sv) * 1997-04-04 2003-10-28 Ericsson Telefon Ab L M Bipolär transistorstruktur
US20050151159A1 (en) * 2003-11-21 2005-07-14 Zhenqiang Ma Solid-state high power device and method
US9728603B2 (en) * 2015-06-22 2017-08-08 Globalfoundries Inc. Bipolar junction transistors with double-tapered emitter fingers

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225261A (en) * 1963-11-19 1965-12-21 Fairchild Camera Instr Co High frequency power transistor
US3600646A (en) * 1969-12-18 1971-08-17 Rca Corp Power transistor
US3896475A (en) * 1972-01-28 1975-07-22 Philips Corp Semiconductor device comprising resistance region having portions lateral to conductors
US4091409A (en) * 1976-12-27 1978-05-23 Rca Corporation Semiconductor device having symmetrical current distribution
US4161740A (en) * 1977-11-07 1979-07-17 Microwave Semiconductor Corp. High frequency power transistor having reduced interconnection inductance and thermal resistance
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
GB2175441B (en) * 1985-05-03 1989-05-10 Texas Instruments Ltd Power bipolar transistor
US5210439A (en) * 1988-01-30 1993-05-11 Robert Bosch Gmbh Power transistor monolithic integrated structure
JPH0226033A (ja) * 1988-07-14 1990-01-29 Nec Corp 高周波高出力トランジスタ
JP3102006B2 (ja) * 1989-10-17 2000-10-23 日本電気株式会社 高周波高出力トランジスタ
EP0439653A1 (de) * 1990-01-31 1991-08-07 Siemens Aktiengesellschaft Hochfrequenz-SMD-Transistor mit zwei Emitteranschlüssen
US5023189A (en) * 1990-05-04 1991-06-11 Microwave Modules & Devices, Inc. Method of thermal balancing RF power transistor array
EP0560123A3 (en) * 1992-03-12 1994-05-25 Siemens Ag Power transistor with multiple finger contacts
JPH0637098A (ja) * 1992-07-15 1994-02-10 Hitachi Ltd 半導体装置及びその製造方法
US5488252A (en) * 1994-08-16 1996-01-30 Telefonaktiebolaget L M Erricsson Layout for radio frequency power transistors
CA2204382A1 (en) * 1994-11-03 1996-05-17 Ted Johansson Ballast monitoring for radio frequency power transistors
JP3253468B2 (ja) * 1994-12-05 2002-02-04 シャープ株式会社 半導体装置

Also Published As

Publication number Publication date
EP0950265B1 (de) 2002-02-20
CN1239590A (zh) 1999-12-22
EP0950265A1 (de) 1999-10-20
CA2267298A1 (en) 1998-04-09
ES2168675T3 (es) 2002-06-16
KR100331493B1 (ko) 2002-04-09
TW373332B (en) 1999-11-01
US5804867A (en) 1998-09-08
WO1998015009A1 (en) 1998-04-09
KR20000048798A (ko) 2000-07-25
JP2002501670A (ja) 2002-01-15
DE69710615T2 (de) 2002-10-17
AU4481297A (en) 1998-04-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE

8339 Ceased/non-payment of the annual fee