DE69710615D1 - Gleichmässiger ballastwiderstand für einen thermisch ausgeglichenen radiofrequenz-leistungstransistor - Google Patents
Gleichmässiger ballastwiderstand für einen thermisch ausgeglichenen radiofrequenz-leistungstransistorInfo
- Publication number
- DE69710615D1 DE69710615D1 DE69710615T DE69710615T DE69710615D1 DE 69710615 D1 DE69710615 D1 DE 69710615D1 DE 69710615 T DE69710615 T DE 69710615T DE 69710615 T DE69710615 T DE 69710615T DE 69710615 D1 DE69710615 D1 DE 69710615D1
- Authority
- DE
- Germany
- Prior art keywords
- radio frequency
- frequency power
- power transistor
- ballast resistance
- thermally balanced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/720,574 US5804867A (en) | 1996-10-02 | 1996-10-02 | Thermally balanced radio frequency power transistor |
PCT/US1997/016311 WO1998015009A1 (en) | 1996-10-02 | 1997-09-15 | Uniform ballast resistance for a thermally balanced radio frequency power transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69710615D1 true DE69710615D1 (de) | 2002-03-28 |
DE69710615T2 DE69710615T2 (de) | 2002-10-17 |
Family
ID=24894499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69710615T Expired - Fee Related DE69710615T2 (de) | 1996-10-02 | 1997-09-15 | Gleichmässiger ballastwiderstand für einen thermisch ausgeglichenen radiofrequenz-leistungstransistor |
Country Status (11)
Country | Link |
---|---|
US (1) | US5804867A (de) |
EP (1) | EP0950265B1 (de) |
JP (1) | JP2002501670A (de) |
KR (1) | KR100331493B1 (de) |
CN (1) | CN1239590A (de) |
AU (1) | AU4481297A (de) |
CA (1) | CA2267298A1 (de) |
DE (1) | DE69710615T2 (de) |
ES (1) | ES2168675T3 (de) |
TW (1) | TW373332B (de) |
WO (1) | WO1998015009A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE521385C2 (sv) * | 1997-04-04 | 2003-10-28 | Ericsson Telefon Ab L M | Bipolär transistorstruktur |
US20050151159A1 (en) * | 2003-11-21 | 2005-07-14 | Zhenqiang Ma | Solid-state high power device and method |
US9728603B2 (en) * | 2015-06-22 | 2017-08-08 | Globalfoundries Inc. | Bipolar junction transistors with double-tapered emitter fingers |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3225261A (en) * | 1963-11-19 | 1965-12-21 | Fairchild Camera Instr Co | High frequency power transistor |
US3600646A (en) * | 1969-12-18 | 1971-08-17 | Rca Corp | Power transistor |
US3896475A (en) * | 1972-01-28 | 1975-07-22 | Philips Corp | Semiconductor device comprising resistance region having portions lateral to conductors |
US4091409A (en) * | 1976-12-27 | 1978-05-23 | Rca Corporation | Semiconductor device having symmetrical current distribution |
US4161740A (en) * | 1977-11-07 | 1979-07-17 | Microwave Semiconductor Corp. | High frequency power transistor having reduced interconnection inductance and thermal resistance |
IT1215230B (it) * | 1985-01-08 | 1990-01-31 | Ates Componenti Elettron | Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria |
GB2175441B (en) * | 1985-05-03 | 1989-05-10 | Texas Instruments Ltd | Power bipolar transistor |
US5210439A (en) * | 1988-01-30 | 1993-05-11 | Robert Bosch Gmbh | Power transistor monolithic integrated structure |
JPH0226033A (ja) * | 1988-07-14 | 1990-01-29 | Nec Corp | 高周波高出力トランジスタ |
JP3102006B2 (ja) * | 1989-10-17 | 2000-10-23 | 日本電気株式会社 | 高周波高出力トランジスタ |
EP0439653A1 (de) * | 1990-01-31 | 1991-08-07 | Siemens Aktiengesellschaft | Hochfrequenz-SMD-Transistor mit zwei Emitteranschlüssen |
US5023189A (en) * | 1990-05-04 | 1991-06-11 | Microwave Modules & Devices, Inc. | Method of thermal balancing RF power transistor array |
EP0560123A3 (en) * | 1992-03-12 | 1994-05-25 | Siemens Ag | Power transistor with multiple finger contacts |
JPH0637098A (ja) * | 1992-07-15 | 1994-02-10 | Hitachi Ltd | 半導体装置及びその製造方法 |
US5488252A (en) * | 1994-08-16 | 1996-01-30 | Telefonaktiebolaget L M Erricsson | Layout for radio frequency power transistors |
CA2204382A1 (en) * | 1994-11-03 | 1996-05-17 | Ted Johansson | Ballast monitoring for radio frequency power transistors |
JP3253468B2 (ja) * | 1994-12-05 | 2002-02-04 | シャープ株式会社 | 半導体装置 |
-
1996
- 1996-10-02 US US08/720,574 patent/US5804867A/en not_active Expired - Lifetime
-
1997
- 1997-09-15 ES ES97943313T patent/ES2168675T3/es not_active Expired - Lifetime
- 1997-09-15 KR KR1019997002789A patent/KR100331493B1/ko not_active IP Right Cessation
- 1997-09-15 DE DE69710615T patent/DE69710615T2/de not_active Expired - Fee Related
- 1997-09-15 WO PCT/US1997/016311 patent/WO1998015009A1/en active IP Right Grant
- 1997-09-15 CA CA002267298A patent/CA2267298A1/en not_active Abandoned
- 1997-09-15 CN CN97180238A patent/CN1239590A/zh active Pending
- 1997-09-15 AU AU44812/97A patent/AU4481297A/en not_active Abandoned
- 1997-09-15 JP JP51656698A patent/JP2002501670A/ja not_active Ceased
- 1997-09-15 EP EP97943313A patent/EP0950265B1/de not_active Expired - Lifetime
- 1997-10-02 TW TW086114349A patent/TW373332B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP0950265B1 (de) | 2002-02-20 |
CN1239590A (zh) | 1999-12-22 |
EP0950265A1 (de) | 1999-10-20 |
CA2267298A1 (en) | 1998-04-09 |
ES2168675T3 (es) | 2002-06-16 |
KR100331493B1 (ko) | 2002-04-09 |
TW373332B (en) | 1999-11-01 |
US5804867A (en) | 1998-09-08 |
WO1998015009A1 (en) | 1998-04-09 |
KR20000048798A (ko) | 2000-07-25 |
JP2002501670A (ja) | 2002-01-15 |
DE69710615T2 (de) | 2002-10-17 |
AU4481297A (en) | 1998-04-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: INFINEON TECHNOLOGIES AG, 81669 MUENCHEN, DE |
|
8339 | Ceased/non-payment of the annual fee |