FI943504A - LC-element, halvledaranordning och tillverkningsförfarande för LC-elementet - Google Patents

LC-element, halvledaranordning och tillverkningsförfarande för LC-elementet Download PDF

Info

Publication number
FI943504A
FI943504A FI943504A FI943504A FI943504A FI 943504 A FI943504 A FI 943504A FI 943504 A FI943504 A FI 943504A FI 943504 A FI943504 A FI 943504A FI 943504 A FI943504 A FI 943504A
Authority
FI
Finland
Prior art keywords
semiconductor device
manufacturing
element manufacturing
semiconductor
Prior art date
Application number
FI943504A
Other languages
English (en)
Finnish (fi)
Other versions
FI114054B (sv
FI943504A0 (sv
Inventor
Takeshi Ikeda
Tsutomu Nakanishi
Akira Okamoto
Original Assignee
Tif Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34147693A external-priority patent/JP3597879B2/ja
Priority claimed from JP13363994A external-priority patent/JP3474636B2/ja
Application filed by Tif Co Ltd filed Critical Tif Co Ltd
Publication of FI943504A0 publication Critical patent/FI943504A0/sv
Publication of FI943504A publication Critical patent/FI943504A/sv
Application granted granted Critical
Publication of FI114054B publication Critical patent/FI114054B/sv

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/0115Frequency selective two-port networks comprising only inductors and capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks
    • H03H7/0123Frequency selective two-port networks comprising distributed impedance elements together with lumped impedance elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021Constructional details
    • H03H2001/0064Constructional details comprising semiconductor material
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021Constructional details
    • H03H2001/0071Constructional details comprising zig-zag inductor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021Constructional details
    • H03H2001/0078Constructional details comprising spiral inductor on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Filters And Equalizers (AREA)
FI943504A 1993-07-26 1994-07-26 LC-element, förfarande för att använda LC-elementet och krets, som omfattar LC-elementet FI114054B (sv)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP20362393 1993-07-26
JP20362393 1993-07-26
JP29428293 1993-10-29
JP29428293 1993-10-29
JP34147693 1993-12-10
JP34147693A JP3597879B2 (ja) 1993-10-29 1993-12-10 Lc素子,半導体装置
JP13363994A JP3474636B2 (ja) 1993-07-26 1994-05-24 Lc素子,半導体装置及びlc素子の製造方法
JP13363994 1994-05-24

Publications (3)

Publication Number Publication Date
FI943504A0 FI943504A0 (sv) 1994-07-26
FI943504A true FI943504A (sv) 1995-01-27
FI114054B FI114054B (sv) 2004-07-30

Family

ID=27471773

Family Applications (1)

Application Number Title Priority Date Filing Date
FI943504A FI114054B (sv) 1993-07-26 1994-07-26 LC-element, förfarande för att använda LC-elementet och krets, som omfattar LC-elementet

Country Status (7)

Country Link
US (2) US5500552A (sv)
EP (1) EP0637842B1 (sv)
KR (1) KR100299714B1 (sv)
CN (1) CN1110096C (sv)
DE (1) DE69430091T2 (sv)
FI (1) FI114054B (sv)
TW (1) TW250591B (sv)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2301706A (en) * 1995-06-01 1996-12-11 Plessey Semiconductors Ltd Intergrated inductor arrangement
US5831331A (en) * 1996-11-22 1998-11-03 Philips Electronics North America Corporation Self-shielding inductor for multi-layer semiconductor integrated circuits
US6885275B1 (en) 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
GB2353139B (en) * 1999-08-12 2001-08-29 United Microelectronics Corp Inductor and method of manufacturing the same
DE10232642B4 (de) * 2002-07-18 2006-11-23 Infineon Technologies Ag Integrierte Transformatoranordnung
US7230316B2 (en) * 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
JP2004228188A (ja) * 2003-01-21 2004-08-12 Renesas Technology Corp 半導体装置
US7425485B2 (en) * 2005-09-30 2008-09-16 Freescale Semiconductor, Inc. Method for forming microelectronic assembly
US20080251275A1 (en) * 2007-04-12 2008-10-16 Ralph Morrison Decoupling Transmission Line
US8212155B1 (en) * 2007-06-26 2012-07-03 Wright Peter V Integrated passive device
KR20090061974A (ko) * 2007-12-12 2009-06-17 한국전자통신연구원 동작 주파수가 가변되는 자기장 강화 장치
JP2010080926A (ja) * 2008-08-29 2010-04-08 Toshiba Lighting & Technology Corp Led点灯装置および照明器具
KR102072803B1 (ko) * 2013-04-12 2020-02-04 삼성디스플레이 주식회사 박막 반도체 장치 및 유기 발광 표시 장치
US9461222B1 (en) * 2015-06-30 2016-10-04 Epistar Corporation Light-emitting element and the light-emitting module thereof
US11164694B2 (en) * 2019-09-27 2021-11-02 Apple Inc. Low-spurious electric-field inductor design
US11735519B2 (en) * 2021-06-24 2023-08-22 Xilinx, Inc. In-package passive inductive element for reflection mitigation

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504430A (en) * 1966-06-27 1970-04-07 Hitachi Ltd Method of making semiconductor devices having insulating films
GB2103012A (en) * 1981-07-03 1983-02-09 Clarion Co Ltd Variable capacitor
JPS594144A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
US4619001A (en) * 1983-08-02 1986-10-21 Matsushita Electric Industrial Co., Ltd. Tuning systems on dielectric substrates
US4737830A (en) * 1986-01-08 1988-04-12 Advanced Micro Devices, Inc. Integrated circuit structure having compensating means for self-inductance effects
US4720467A (en) * 1986-09-29 1988-01-19 International Business Machines Corporation Method of forming a capacitor-transistor integrated circuit
US4819047A (en) * 1987-05-15 1989-04-04 Advanced Micro Devices, Inc. Protection system for CMOS integrated circuits
JP2732089B2 (ja) * 1988-10-14 1998-03-25 ローム株式会社 集積回路のコンデンサ形成方法
US5136357A (en) * 1989-06-26 1992-08-04 Micron Technology, Inc. Low-noise, area-efficient, high-frequency clock signal distribution line structure
JP3280019B2 (ja) * 1989-10-26 2002-04-30 新潟精密株式会社 Lcノイズフィルタ
JPH03190302A (ja) * 1989-12-19 1991-08-20 Mitsubishi Electric Corp 電界効果トランジスタを使用した共振回路
US5227659A (en) * 1990-06-08 1993-07-13 Trustees Of Boston University Integrated circuit inductor
JPH04326607A (ja) * 1991-04-26 1992-11-16 Sumitomo Electric Ind Ltd 発振回路
JP3045573B2 (ja) * 1991-08-19 2000-05-29 北川工業株式会社 電子部品、コンデンサおよび3端子ノイズフィルタの製造方法
US5431987A (en) * 1992-11-04 1995-07-11 Susumu Okamura Noise filter
US5370766A (en) * 1993-08-16 1994-12-06 California Micro Devices Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices

Also Published As

Publication number Publication date
EP0637842B1 (en) 2002-03-13
KR950004609A (ko) 1995-02-18
DE69430091T2 (de) 2002-10-31
CN1110028A (zh) 1995-10-11
KR100299714B1 (ko) 2001-10-22
DE69430091D1 (de) 2002-04-18
US5846845A (en) 1998-12-08
TW250591B (sv) 1995-07-01
CN1110096C (zh) 2003-05-28
FI114054B (sv) 2004-07-30
US5500552A (en) 1996-03-19
FI943504A0 (sv) 1994-07-26
EP0637842A1 (en) 1995-02-08

Similar Documents

Publication Publication Date Title
DE69414208D1 (de) Optischer Halbleitervorrichtung und Herstellungsverfahren
DE69434606T8 (de) Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
KR960009110A (ko) 반도체 장치 및 그 제조방법
FI946026A (sv) LC-element, halvledaranordning och tillverkningsförfarande för LC-elementet
KR960012575A (ko) 반도체 장치 제조 방법
DE69413602D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69435205D1 (de) Dünne Halbleitervorrichtung und Herstellungsverfahren
KR960009107A (ko) 반도체장치와 그 제조방법
DE69430511D1 (de) Halbleiteranordnung und Herstellungverfahren
DE69424728T2 (de) Halbleiteranordnung und zugehörige Herstellungsmethode
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69527330T2 (de) Halbleiteranordnung und Herstellungsverfahren
KR950034612A (ko) 반도체 구조물 및 그 제조 방법
KR910008793A (ko) 반도체장치 및 그 제조방법
KR960015900A (ko) 반도체 장치 및 그 제조방법
KR960012574A (ko) 반도체장치 제조방법
KR970004015A (ko) 반도체장치 및 그의 제조방법
FI943504A (sv) LC-element, halvledaranordning och tillverkningsförfarande för LC-elementet
KR960012313A (ko) 반도체 장치 및 그 제조방법
DE69420944T2 (de) Halbleitervorrichtung und herstellungsverfahren
FI945061A (sv) LC-element, halvledaranordning och tillverkningsförfarande för LC-elementet
FI954241A (sv) Framställningsförfarande för en halvledaranordning
KR900015301A (ko) 반도체장치 및 그 제조방법
DE69431782T2 (de) Programmierbares Halbleiterbauelement
DE69500392T2 (de) Halbleiterlasergerät und dessen Herstellungsverfahren

Legal Events

Date Code Title Description
MA Patent expired