FI920396A - Foerfarande foer reglering av en reaktiv sputteringsprocess och anordning foer utfoerande av foerfarandet - Google Patents

Foerfarande foer reglering av en reaktiv sputteringsprocess och anordning foer utfoerande av foerfarandet Download PDF

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Publication number
FI920396A
FI920396A FI920396A FI920396A FI920396A FI 920396 A FI920396 A FI 920396A FI 920396 A FI920396 A FI 920396A FI 920396 A FI920396 A FI 920396A FI 920396 A FI920396 A FI 920396A
Authority
FI
Finland
Prior art keywords
foer
sputteringsprocess
reaktiv
foerfarandet
utfoerande
Prior art date
Application number
FI920396A
Other languages
English (en)
Other versions
FI920396A0 (fi
Inventor
Rudolf Latz
Original Assignee
Leybold Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6426217&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=FI920396(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Leybold Ag filed Critical Leybold Ag
Publication of FI920396A0 publication Critical patent/FI920396A0/fi
Publication of FI920396A publication Critical patent/FI920396A/fi

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
FI920396A 1991-03-01 1992-01-29 Foerfarande foer reglering av en reaktiv sputteringsprocess och anordning foer utfoerande av foerfarandet FI920396A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4106513A DE4106513C2 (de) 1991-03-01 1991-03-01 Verfahren zur Regelung eines reaktiven Sputterprozesses und Vorrichtung zur Durchführung des Verfahrens

Publications (2)

Publication Number Publication Date
FI920396A0 FI920396A0 (fi) 1992-01-29
FI920396A true FI920396A (fi) 1992-09-02

Family

ID=6426217

Family Applications (1)

Application Number Title Priority Date Filing Date
FI920396A FI920396A (fi) 1991-03-01 1992-01-29 Foerfarande foer reglering av en reaktiv sputteringsprocess och anordning foer utfoerande av foerfarandet

Country Status (6)

Country Link
US (1) US5556520A (fi)
EP (1) EP0501016A1 (fi)
JP (1) JP3363918B2 (fi)
KR (1) KR100249571B1 (fi)
DE (1) DE4106513C2 (fi)
FI (1) FI920396A (fi)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4231950C2 (de) * 1992-09-24 2001-03-15 Jung Gmbh Albrecht Gehäuse für die Aufnahme von Daten- und Kommunikations-Steckverbindungen in senkrechter oder geneigter Einbaulage
DE4233512C2 (de) * 1992-10-06 2000-07-13 Leybold Ag Verfahren zur Steuerung von Prozeßgasen für Beschichtungsanlagen und Beschichtungsanlage zu seiner Durchführung
US5942089A (en) * 1996-04-22 1999-08-24 Northwestern University Method for sputtering compounds on a substrate
ZA956036B (en) * 1994-08-02 1996-02-23 Boc Group Inc Sputtering silicon dielectric films with noble gas mixtures
DE19506515C1 (de) * 1995-02-24 1996-03-07 Fraunhofer Ges Forschung Verfahren zur reaktiven Beschichtung
DE19715647C2 (de) * 1997-04-15 2001-03-08 Ardenne Anlagentech Gmbh Verfahren und Vorrichtung zur Regelung der reaktiven Schichtabscheidung auf Substraten mittels längserstreckten Magnetrons
US5879461A (en) * 1997-04-21 1999-03-09 Brooks Automation, Inc. Metered gas control in a substrate processing apparatus
US6217720B1 (en) * 1997-06-03 2001-04-17 National Research Council Of Canada Multi-layer reactive sputtering method with reduced stabilization time
US5985104A (en) * 1997-10-09 1999-11-16 International Business Machines Corporation Sputtered mask defined with highly selective side wall chemical etching
DE19804751C2 (de) * 1998-01-12 2000-08-31 Fraunhofer Ges Forschung Verfahren zum Beschichten von Folie aus Nickel oder einer Nickellegierung und beschichtete Folie aus Nickel oder einer Nickellegierung
DE19800758C2 (de) * 1998-01-12 2000-08-31 Fraunhofer Ges Forschung Verfahren zum Beschichten von Folie aus Nickel oder einer Nickellegierung und beschichtete Folie aus Nickel oder einer Nickellegierung
US6106676A (en) * 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
US6537428B1 (en) * 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
DE19956733A1 (de) 1999-11-25 2001-06-28 Fraunhofer Ges Forschung Verfahren zur Regelung von Sputterprozessen
JP2002275628A (ja) * 2001-03-21 2002-09-25 Sumitomo Bakelite Co Ltd スパッタリング成膜方法
DE10159907B4 (de) * 2001-12-06 2008-04-24 Interpane Entwicklungs- Und Beratungsgesellschaft Mbh & Co. Beschichtungsverfahren
JP4049372B2 (ja) 2002-10-23 2008-02-20 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランクスの製造方法
US7141145B2 (en) * 2003-10-02 2006-11-28 Seagate Technology Llc Gas injection for uniform composition reactively sputter-deposited thin films
WO2005036607A2 (en) * 2003-10-08 2005-04-21 Deposition Sciences, Inc. System and method for feedforward control in thin film coating processes
DE102004024351A1 (de) * 2004-05-17 2005-12-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Aufbringen eines Dünnschichtsystems mittels Zerstäuben
DE102005015587B4 (de) * 2005-04-05 2009-12-24 Von Ardenne Anlagentechnik Gmbh Verfahren und Anordnung zur Stabilisierung eines Arbeitspunktes von reaktiven, plasmagestützten Vakuumbeschichtungsprozessen
KR100915440B1 (ko) * 2007-12-06 2009-09-03 한양대학교 산학협력단 자성 반도체 제조 방법 및 그 장치
CN103958723B (zh) * 2011-11-30 2017-04-05 应用材料公司 闭环控制
WO2014105872A2 (en) 2012-12-27 2014-07-03 Flir Systems, Inc. Deposition systems and methods
JP5871103B2 (ja) * 2013-06-04 2016-03-01 株式会社村田製作所 薄膜形成方法
CN104451583B (zh) * 2015-01-05 2017-05-10 合肥京东方显示光源有限公司 磁控溅射真空室进气装置及磁控溅射设备
JP6596474B2 (ja) * 2017-10-10 2019-10-23 アプライド マテリアルズ インコーポレイテッド 閉ループ制御
CN115074682A (zh) * 2022-06-30 2022-09-20 芜湖长信科技股份有限公司 提升触摸屏高膜厚二氧化硅镀膜效率的工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE144281C (fi) *
DE146306C (fi) *
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
FR2371009A1 (fr) * 1976-11-15 1978-06-09 Commissariat Energie Atomique Procede de controle du depot de couches par pulverisation reactive et dispositif de mise en oeuvre
DE2821119C2 (de) * 1978-05-13 1983-08-25 Leybold-Heraeus GmbH, 5000 Köln Verfahren und Anordnung zur Regelung des Entladungsvorganges in einer Katodenzerstäubungsanlage
US4201645A (en) * 1978-06-26 1980-05-06 Robert J. Ferran Closed-loop sputtering system and method of operating same
DD144281A1 (de) * 1979-06-14 1980-10-08 Siegfried Schiller Verfahren zum reaktiven aufstaeuben von dielektrischem material
DD146306A1 (de) * 1979-10-02 1981-02-04 Guenther Beister Verfahren zum reaktiven aufstaeuben dielektrischer schichten
US4500408A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
US5108569A (en) * 1989-11-30 1992-04-28 Applied Materials, Inc. Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering

Also Published As

Publication number Publication date
EP0501016A1 (de) 1992-09-02
DE4106513C2 (de) 2002-06-13
US5556520A (en) 1996-09-17
DE4106513A1 (de) 1992-09-03
KR920018236A (ko) 1992-10-21
FI920396A0 (fi) 1992-01-29
KR100249571B1 (ko) 2000-04-01
JPH0578836A (ja) 1993-03-30
JP3363918B2 (ja) 2003-01-08

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