FI832179L - Parallellkopplade grindstyrda tyristorer - Google Patents

Parallellkopplade grindstyrda tyristorer

Info

Publication number
FI832179L
FI832179L FI832179A FI832179A FI832179L FI 832179 L FI832179 L FI 832179L FI 832179 A FI832179 A FI 832179A FI 832179 A FI832179 A FI 832179A FI 832179 L FI832179 L FI 832179L
Authority
FI
Finland
Prior art keywords
tyristorer
parallellkopplade
grindstyrda
parallellkopplade grindstyrda
grindstyrda tyristorer
Prior art date
Application number
FI832179A
Other languages
English (en)
Finnish (fi)
Other versions
FI832179A0 (fi
Inventor
Shin Kimura
Hiroshi Fukui
Shinji Yamada
Shuji Musha
Masayoshi Sato
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FI832179A0 publication Critical patent/FI832179A0/fi
Publication of FI832179L publication Critical patent/FI832179L/fi

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12Modifications for increasing the maximum permissible switched current
    • H03K17/125Modifications for increasing the maximum permissible switched current in thyristor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
FI832179A 1982-06-25 1983-06-15 Parallellkopplade grindstyrda tyristorer FI832179L (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57110339A JPS5917862A (ja) 1982-06-25 1982-06-25 ゲ−トタ−ンオフサイリスタの並列接続体

Publications (2)

Publication Number Publication Date
FI832179A0 FI832179A0 (fi) 1983-06-15
FI832179L true FI832179L (fi) 1983-12-26

Family

ID=14533243

Family Applications (1)

Application Number Title Priority Date Filing Date
FI832179A FI832179L (fi) 1982-06-25 1983-06-15 Parallellkopplade grindstyrda tyristorer

Country Status (4)

Country Link
US (1) US4612561A (ja)
JP (1) JPS5917862A (ja)
DE (1) DE3322641A1 (ja)
FI (1) FI832179L (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3442484A1 (de) * 1984-11-22 1986-05-22 Robert Bosch Gmbh, 7000 Stuttgart Thyristorschaltung
DE3717253A1 (de) * 1986-05-26 1987-12-03 Hitachi Ltd Direkte parallelschaltung von abschaltbaren halbleiterelementen
JPS62276923A (ja) * 1986-05-26 1987-12-01 Hitachi Ltd ゲ−トタ−ンオフ型サイリスタの直接並列接続回路
DE3714174A1 (de) * 1987-04-24 1988-11-10 Licentia Gmbh Symmetrierung der abzuschaltenden stroeme parallelgeschalteter, gategesteuerter halbleiter
US5036377A (en) * 1988-08-03 1991-07-30 Texas Instruments Incorporated Triac array
EP0469172B1 (de) * 1990-08-02 1995-01-25 Asea Brown Boveri Ag Viertelbrückenschaltung für grosse Ströme
US5051603A (en) * 1990-08-14 1991-09-24 General Electric Company Method and apparatus for matching turn-off times of parallel connected semiconductor switching devices
EP0489945B1 (de) * 1990-12-08 2003-01-29 ABB Schweiz AG Schaltanordnung für einen HF-GTO
DE69509428T2 (de) * 1994-03-24 1999-09-30 Fuji Electric Co Ltd Struktur einer Parallelschaltverbindung für flache Halbleiterschalter
JP3610878B2 (ja) * 2000-04-28 2005-01-19 株式会社デンソー 負荷駆動回路
JP2001310720A (ja) * 2000-04-28 2001-11-06 Denso Corp 負荷駆動回路
JP2009295763A (ja) * 2008-06-05 2009-12-17 Fujitsu Ltd 半導体実装装置及び電子機器
JP5954924B2 (ja) * 2010-08-09 2016-07-20 富士電機株式会社 電力変換装置
JP5743811B2 (ja) * 2011-08-29 2015-07-01 株式会社東芝 電力変換装置
WO2015111215A1 (ja) * 2014-01-27 2015-07-30 株式会社日立製作所 スイッチング素子駆動装置
JP5926835B2 (ja) * 2015-04-23 2016-05-25 株式会社東芝 電力変換装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3662250A (en) * 1970-11-12 1972-05-09 Gen Electric Thyristor overvoltage protective circuit
GB1263175A (en) * 1969-07-18 1972-02-09 Westinghouse Brake & Signal Semiconductor controlled rectifier circuit
US3633046A (en) * 1970-04-28 1972-01-04 Gen Electric Parallel thyristors switching matrices
NL7101794A (ja) * 1971-02-11 1972-08-15
CH630491A5 (de) * 1978-06-15 1982-06-15 Bbc Brown Boveri & Cie Leistungsthyristor, verfahren zu seiner herstellung und verwendung derartiger thyristoren in stromrichterschaltungen.
JPS55134538A (en) * 1979-04-06 1980-10-20 Hitachi Ltd Parallel circuit of self-arc-extinguishing type switching element

Also Published As

Publication number Publication date
JPS5917862A (ja) 1984-01-30
FI832179A0 (fi) 1983-06-15
US4612561A (en) 1986-09-16
DE3322641C2 (ja) 1988-07-28
DE3322641A1 (de) 1984-01-05
JPH0548068B2 (ja) 1993-07-20

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Legal Events

Date Code Title Description
FD Application lapsed

Owner name: HITACHI LTD